Temporal Response of MSM-LED Optical Integrated Device

2011 ◽  
Vol 21 (1) ◽  
pp. 73-82
Author(s):  
Sh. M. Eladl ◽  
M. A. Ashour
Keyword(s):  
Temporal Response ◽  
Integrated Device

scholarly journals Temporal Response of MSM-LED Optical Integrated Device

2011 ◽  
Vol 2011 ◽  
pp. 1-4
Author(s):  
Sh. M. Eladl ◽  
M. A. Ashour
Keyword(s):  
Frequency Response ◽  
Optical Feedback ◽  
Light Emitting Diode ◽  
Cutoff Frequency ◽  
Temporal Response ◽  
Device Structure ◽  
Light Emitting ◽  
Msm Photodetector ◽  
Response Output ◽  
Integrated Device

The temporal response of an optical integrated device is theoretically analysed. The device is composed of a Metal-Semiconductor-Metal (MSM) Photodetector and a Light Emitting Diode (LED). The analysis is based on the frequency response of the constituent devices without any optical feedback within the device structure. All expressions describing the frequency response, time response, output derivatives, and rise time are outlined. The results show that the temporal response of MSM detectors is similar to the LED response if the cutoff frequency of the LED is lower than that of MSM, while it is similar to MSM detector if the cutoff frequency of the MSM is lower than that of LED.

Air Bridge Technology: A Comparison of Novel Interconnect Materials and Integration Schemes for Beyond 45 nm

2003 ◽  
Vol 766 ◽  
Author(s):  
Kenneth Foster ◽  
Joost Waeterloos ◽  
Don Frye ◽  
Steve Froelicher ◽  
Mike Mills
Keyword(s):  
Dielectric Constants ◽  
Advanced Technology ◽  
Effective Dielectric Constant ◽  
Device Performance ◽  
Interlayer Dielectric ◽  
Integration Schemes ◽  
Stepwise Reduction ◽  
Bridge Technology ◽  
Integrated Device ◽  
Compare And Contrast

AbstractThe electronics industry, in a continual drive for improved integrated device performance, is seeking increasingly lower dielectric constants (k) of the insulators that are used as interlayer dielectric (ILD) for advanced logic interconnects. As the industry continually seeks a stepwise reduction of the “effective” dielectric constant (keff), simple extendibility, leads to the consideration of the highest performance possible, namely air bridge technology. In this paper we will discuss requirements, integration schemes and properties for a novel class of materials that has been developed as part of an advanced technology probe into air bridge architecture. We will compare and contrast these potential technology offerings with other existing dense and porous ILD integration options, and show that the choice is neither trivial nor obvious.

scholarly journals An LED-Driven AuNPs-PDMS Microfluidic Chip and Integrated Device for the Detection of Digital Loop-Mediated Isothermal DNA Amplification

Micromachines ◽  
2020 ◽  
Vol 11 (2) ◽  
pp. 177 ◽  
Author(s):  
Zengming Zhang ◽  
Shuhao Zhao ◽  
Fei Hu ◽  
Guangpu Yang ◽  
Juan Li ◽  
...  
Keyword(s):  
Nucleic Acids ◽  
Microfluidic Chip ◽  
Cross Flow ◽  
Flow Channel ◽  
Isothermal Amplification ◽  
Fluorescent Detection ◽  
Lamp Method ◽  
Biological Studies ◽  
Micro Cavity ◽  
Integrated Device

The sensitive quantification of low-abundance nucleic acids holds importance for a range of clinical applications and biological studies. In this study, we describe a facile microfluidic chip for absolute DNA quantifications based on the digital loop-mediated isothermal amplification (digital LAMP) method. This microfluidic chip integrates a cross-flow channel for droplet generation with a micro-cavity for droplet tiling. DNA templates in the LAMP reagent were divided into ~20,000 water-in-oil droplets at the cross-flow channel. The droplets were then tiled in the micro-cavity for isothermal amplification and fluorescent detection. Different from the existing polydimethylsiloxane (PDMS) microfluidic chips, this study incorporates gold nanoparticles (AuNPs) into PDMS substrate through silica coating and dodecanol modification. The digital LAMP chip prepared by AuNPs-PDMS combines the benefits of the microstructure manufacturing performance of PDMS with the light-to-heat conversion advantages of AuNPs. Upon illumination with a near infrared (NIR) LED, the droplets were stably and efficiently heated by the AuNPs in PDMS. We further introduce an integrated device with a NIR heating unit and a fluorescent detection unit. The system could detect HBV (hepatitis B virus)-DNA at a concentration of 1 × 101 to 1 × 104 copies/μL. The LED-driven digital LAMP chip and the integrated device; therefore, demonstrate high accuracy and excellent performance for the absolute quantification of low-abundance nucleic acids, showing the advantages of integration, miniaturization, cost, and power consumption.

scholarly journals Polarization-transparent silicon photonic add-drop multiplexer with wideband hitless tuneability

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Francesco Morichetti ◽  
Maziyar Milanizadeh ◽  
Matteo Petrini ◽  
Francesco Zanetto ◽  
Giorgio Ferrari ◽  
...  
Keyword(s):  
Optical Networks ◽  
Communication Networks ◽  
Bandwidth Allocation ◽  
Core Networks ◽  
Reconfigurable Devices ◽  
Silicon Photonic ◽  
Transmission Quality ◽  
And Control ◽  
Integrated Device ◽  
Dynamic Bandwidth

AbstractFlexible optical networks require reconfigurable devices with operation on a wavelength range of several tens of nanometers, hitless tuneability (i.e. transparency to other channels during reconfiguration), and polarization independence. All these requirements have not been achieved yet in a single photonic integrated device and this is the reason why the potential of integrated photonics is still largely unexploited in the nodes of optical communication networks. Here we report on a fully-reconfigurable add-drop silicon photonic filter, which can be tuned well beyond the extended C-band (almost 100 nm) in a complete hitless (>35 dB channel isolation) and polarization transparent (1.2 dB polarization dependent loss) way. This achievement is the result of blended strategies applied to the design, calibration, tuning and control of the device. Transmission quality assessment on dual polarization 100 Gbit/s (QPSK) and 200 Gbit/s (16-QAM) signals demonstrates the suitability for dynamic bandwidth allocation in core networks, backhaul networks, intra- and inter-datacenter interconnects.

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