scholarly journals Влияние замещения висмута празеодимом и лантаном на термоэлектрические свойства оксиселенидов BiCuSeO

Author(s):  
А.П. Новицкий ◽  
И.А. Сергиенко ◽  
С.В. Новиков ◽  
К.В. Кусков ◽  
Д.В. Лейбо ◽  
...  

AbstractThe  results  of  investigating  the  thermoelectric  properties of the bulk р -type oxyselenides Bi_1 –_ x Pr_ x CuSeO ( x = 0, 0.04, 0.08) and Bi_0.96La_0.04CuSeO obtained by the solid-state reaction technique are presented. The temperature dependences of the thermopower, electrical resistivity, and thermal conductivity are measured at temperatures from room temperature to 800 K. Over the whole temperature range, a decrease in the electrical resistivity and thermopower is observed with increasing substitution level, while the thermal conductivity is almost unaffected by the substitution of rare-earth elements for bismuth. Despite the nominal valence of Bi, La, and Pr being the same, the replacement of bismuth by rare-earth ions leads to an increase in the charge-carrier concentration, which may be caused by a difference in the electronic configurations of ions, resulting in a shift of the Fermi level to the valence band.

2003 ◽  
Vol 793 ◽  
Author(s):  
Y. Amagai ◽  
A. Yamamoto ◽  
C. H. Lee ◽  
H. Takazawa ◽  
T. Noguchi ◽  
...  

ABSTRACTWe report transport properties of polycrystalline TMGa3(TM = Fe and Ru) compounds in the temperature range 313K<T<973K. These compounds exhibit semiconductorlike behavior with relatively high Seebeck coefficient, electrical resistivity, and Hall carrier concentrations at room temperature in the range of 1017- 1018cm−3. Seebeck coefficient measurements reveal that FeGa3isn-type material, while the Seebeck coefficient of RuGa3changes signs rapidly from large positive values to large negative values around 450K. The thermal conductivity of these compounds is estimated to be 3.5Wm−1K−1at room temperature and decreased to 2.5Wm−1K−1for FeGa3and 2.0Wm−1K−1for RuGa3at high temperature. The resulting thermoelectric figure of merit,ZT, at 945K for RuGa3reaches 0.18.


Nanoscale ◽  
2018 ◽  
Vol 10 (23) ◽  
pp. 11186-11195 ◽  
Author(s):  
C. H. Wong ◽  
E. A. Buntov ◽  
A. F. Zatsepin ◽  
J. Lyu ◽  
R. Lortz ◽  
...  

The study of magnetism without the involvement of transition metals or rare earth ions is considered the key to the fabrication of next-generation spintronic devices.


1989 ◽  
Vol 167 ◽  
Author(s):  
R. C. Enck ◽  
R. D. Harris

AbstractThe thermal conductivity of ceramic materials used for IC substrates and packages has increased in importance as chip sizes have decreased and heat loads have risen. AIN which has a room temperature (RT) thermal conductivity (λ) greater than 200 W/m·K and BeO with λ(RT) ∼260 W/m·K are the major candidates for applications demanding high conductivity. Conflicting reports of the temperature dependences of λ for these materials over the range of interest for packaging use (≤200°C) have been published, with some reports suggesting a crossover in λ. These reported differences may be due to the reported problems in measuring λ in AIN using the flash diffusivity method. For the present experiments, we have used a new long wavelength laser flash diffusivity system which has been shown to determine thermal diffusivity to better than ± 3% for AIN with sample thicknesses ranging from 0.3 mm to 5 mm. No absorbinq coatings are required and no correction factors are needed to fit the data to theory. We report λ from room temperature to 400°C for AIN from a number of commercial sources, and for BeO and SiC. At room temperature, BeO has the highest thermal conductivity, but as the temperature is raised, the values for BeO and AIN approach one another, with crossover observed at about 350°C for the highest conductivity AIN sample studied. Recent steady state heat flow measurements agree with our thermal conductivity values rather than with previous literature values.


1996 ◽  
Vol 10 (20) ◽  
pp. 955-961
Author(s):  
LAUREAN HOMORODEAN ◽  
IULIU POP ◽  
ION BURDOI

The changes in the temperature dependences of the magnetic susceptibility and the electrical resistivity of a very-high-T c superconducting YBa 2 Cu 3 O 7−δ sample during the thermal cycling between the liquid-nitrogen temperature and the room temperature are studied. Some singularities corresponding to the superconducting transition, the possible existence of a super-high-temperature superconducting phase and the migration of the oxygen atoms in the Cu-O chains are emphasized on these dependencies.


1978 ◽  
Vol 100 (2) ◽  
pp. 330-333 ◽  
Author(s):  
R. E. Taylor

Samples of sintered and arc-cast tungsten are available from NBS as thermal conductivity (SRM 730) and electrical resistivity (SRM 799) standards for the temperature range from 4 to 3000K. NBS recommended values for these properties above room temperature are based on results of various researchers during a previous international program which included arc-cast and sintered tungsten. The sintered tungsten used in this program was found to be unsuited for use as a standard material due to inhomogeneity and high temperature instability. The present paper gives results at high temperatures for thermal conductivity, electrical resistivity, specific heat, thermal diffusivity and Wiedemann-Franz-Lorenz ratio for a sample of the NBS sintered tungsten using the Properties Research Laboratory’s multiproperty apparatus. These results are compared to values recommended by the Thermophysical Properties Research Center, NBS, and an international program.


1988 ◽  
Vol 02 (06) ◽  
pp. 1395-1398
Author(s):  
J. R. HWANG ◽  
M. F. TAI ◽  
H. C. KU ◽  
W. N. WANG ◽  
K. H. LII

Electrical and magnetic measurements have been carried out for the rare earth disordered superconducting copper oxide systems ( Y 1−x Yb x) Ba 2 Cu 3 O 7 (substitution with large rare earth mass difference) and ( Sm 1−x Yb x) Ba 2 Cu 3 O 7 (substitution with large rare earth ionic size difference). Effect of compositional variation upon room temperature electrical resistivity shows no disorder scattering contribution from the randomly distributed rare earth ions located on the (1/2, 1/2, 1/2) site of the space group Pmmm. This result indicates very low conduction electron density of states surrounding rare earth ions. On the contrary, negative deviation of electrical resistivity from the linear Vegard law was observed. This reduced conduction electron scattering was discussed through the variation of packing density, grain size and/or twin structure.


1965 ◽  
Vol 20 (6) ◽  
pp. 835-837 ◽  
Author(s):  
Shyama P. Sinha

The room temperature luminescence spectra of the monoterpyridyl chelates of trivalent samarium, dysprosium and thulium have been studied in solid state by exciting with monochromatic radiation of 3200 Å. The spectra of these chelates show intra f → f fluorescent transitions of the chelated rare earth ions as well as the molecular band fluorescence. The “bottleneck” nature of the energy transfer from the nitrogen containing heterocyclic ligands to the coordinated rare earth ions is proposed. The fluorescence data of mono-terpyridyl chelates have been compared with those of bis-dipyridyl one.The phosphorescence spectrum of terpyridyl has also been investigated. The lowest triplet state of the free ligand is found at 22 940 cm-1 above the ground level. The phosphorescence lifetime of terpyridyl is about 2 sec


1999 ◽  
Vol 581 ◽  
Author(s):  
R.E. Park ◽  
Y.H. Park ◽  
T. Abe

ABSTRACTThe Bi2Te3-Sb2Te3 compounds with the composition of useful thermoelectric cooling materials were prepared by mechanical alloying-pulse discharge sintering process. Effects of the process on the Seebeck coefficient, electrical resistivity and thermal conductivity were investigated. Temperature dependence of the Hall coefficient was also observed in the temperature range 80 - 325 K.The figure of merit, Z, was found to be about 4.0 × 10−1K−1 at room temperature in the 25%Bi2Te3-75%Sb2Te3 composition sintered at 618K using grain refined mechanically alloyed powders which had the size of under 32 μm. The value of Z was remarkably improved with a decrease of the thermal conductivity shown in the fine grain compacts fabricated by mechanical alloying-pulse discharge sintering process.


2000 ◽  
Vol 80 (4) ◽  
pp. 719-728 ◽  
Author(s):  
Giorgia Franzó ◽  
Vincenzo Vinciguerra ◽  
Francesco Priolo

2004 ◽  
Vol 449-452 ◽  
pp. 905-908 ◽  
Author(s):  
Dong Choul Cho ◽  
Cheol Ho Lim ◽  
D.M. Lee ◽  
Seung Y. Shin ◽  
Chung Hyo Lee

The n-type thermoelectric materials of Bi2Te2.7Se0.3 doped with SbI3 were prepared by spark plasma sintering technique. The powders were ball-milled in an argon and air atmosphere. Then, powders were reduced in H2 atmosphere. Effects of oxygen content on the thermoelectric properties of Bi2Te2.7Se0.3 compounds have been investigated. Seebeck coefficient, electrical resistivity and thermal conductivity of the sintered compound were measured at room temperature. It was found that the effect of atmosphere during the powder production was remarkable and thermoelectric properties of sintered compound were remarkably improved by H2 reduction of starting powder. The obtained maximum figure of merit was 2.4 x 10-3/K.


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