scholarly journals Direct evidence for the amorphous silicon phase in visible photoluminescent porous silicon

1992 ◽  
Vol 61 (5) ◽  
pp. 563-565 ◽  
Author(s):  
J. M. Perez ◽  
J. Villalobos ◽  
P. McNeill ◽  
J. Prasad ◽  
R. Cheek ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Amorphous Silicon ◽  
Direct Evidence ◽  
Silicon Phase

scholarly journals Особенности дефектообразования в наноструктурированном кремнии при ионном облучении

2019 ◽  
Vol 53 (6) ◽  
pp. 810
Author(s):  
А.В. Кожемяко ◽  
А.П. Евсеев ◽  
Ю.В. Балакшин ◽  
А.А. Шемухин
Keyword(s):  
Porous Silicon ◽  
Raman Scattering ◽  
Amorphous Silicon ◽  
Raman Spectra ◽  
Crystalline Phase ◽  
Weak Signal ◽  
Silicon Phase ◽  
Nanostructured Silicon ◽  
Displacement Per Atom ◽  
Accumulation Of Defects

Irradiations of the nanostructured silicon with Si+ and He+ ions were carried out with energies of 200 and 150 keV, respectively. Raman scattering showed destruction of the structure after irradiations and accumulation of defects at different fluences of irradiation. It is shown that monocrystalline silicon films are amorphized under irradiation at 0.7 displacement per atom. However, porous silicon does not completely amorphize at 0.5 displacement per atom, a weak signal is observed in the Raman spectra corresponding to the amorphous silicon phase, and at the same time there is an obvious signal from the crystalline phase of silicon. The size of nanocrystallites in the structure of porous silicon was estimated at different fluences of irradiation.

Formation of Nanocrystalline Silicon in Tin-Doped Amorphous Silicon Films

2020 ◽  
Vol 65 (3) ◽  
pp. 236
Author(s):  
R. M. Rudenko ◽  
O. O. Voitsihovska ◽  
V. V. Voitovych ◽  
M. M. Kras’ko ◽  
A. G. Kolosyuk ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Nanocrystalline Silicon ◽  
Recrystallization Temperature ◽  
Nanocrystalline Phase ◽  
Silicon Phase ◽  
Silicon Nanocrystallites ◽  
Lower Temperature ◽  
Two Stages

The process of crystalline silicon phase formation in tin-doped amorphous silicon (a-SiSn) films has been studied. The inclusions of metallic tin are shown to play a key role in the crystallization of researched a-SiSn specimens with Sn contents of 1–10 at% at temperatures of 300–500 ∘C. The crystallization process can conditionally be divided into two stages. At the first stage, the formation of metallic tin inclusions occurs in the bulk of as-precipitated films owing to the diffusion of tin atoms in the amorphous silicon matrix. At the second stage, the formation of the nanocrystalline phase of silicon occurs as a result of the motion of silicon atoms from the amorphous phase to the crystalline one through the formed metallic tin inclusions. The presence of the latter ensures the formation of silicon crystallites at a much lower temperature than the solid-phase recrystallization temperature (about 750 ∘C). A possibility for a relation to exist between the sizes of growing silicon nanocrystallites and metallic tin inclusions favoring the formation of nanocrystallites has been analyzed.

Direct Evidence of Phosphorus-Defect Complexes inn-Type Amorphous Silicon and Hydrogenated Amorphous Silicon

1999 ◽  
Vol 82 (19) ◽  
pp. 3819-3822 ◽  
Author(s):  
Mihail P. Petkov ◽  
Marc H. Weber ◽  
Kelvin G. Lynn ◽  
Richard S. Crandall ◽  
Vinita J. Ghosh
Keyword(s):  
Amorphous Silicon ◽  
Direct Evidence ◽  
Hydrogenated Amorphous Silicon ◽  
Defect Complexes ◽  
Hydrogenated Amorphous

Visible electroluminescence from porous silicon/hydrogenated amorphous silicon pn‐heterojunction devices

1996 ◽  
Vol 68 (5) ◽  
pp. 684-686 ◽  
Author(s):  
Peter C. Sercel ◽  
Daewon Kwon ◽  
Teha Vilbrandt ◽  
Weidong Yang ◽  
John Hautala ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Heterojunction Devices ◽  
Hydrogenated Amorphous

Annealing and amorphous silicon passivation of porous silicon with blue light emission

2005 ◽  
Vol 252 (4) ◽  
pp. 1065-1069 ◽  
Author(s):  
Yue Zhao ◽  
Deren Yang ◽  
Dongsheng Li ◽  
Minghua Jiang
Keyword(s):  
Porous Silicon ◽  
Amorphous Silicon ◽  
Blue Light ◽  
Light Emission ◽  
Blue Light Emission

Oxidation Induced Giant Modulation in the Luminescence of Colloidal Amorphous Porous Silicon Nanoparticles

2015 ◽  
Vol 1748 ◽  
Author(s):  
Jehad K. El Demellawi ◽  
Dalaver H. Anjum ◽  
Sahraoui Chaieb
Keyword(s):  
Porous Silicon ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Silicon Nanoparticles ◽  
Crystalline Silicon ◽  
Local Strain ◽  
Orbital Interactions ◽  
Novel Approach ◽  
Porous Silicon Nanoparticles ◽  
Chemical Procedure

ABSTRACTThe emission of crystalline silicon nanoparticles as well as nanowires can be tuned by varying their diameters. The diameter selection is achieved via a difficult chemical procedure that necessitates filtration which cannot be easily scaled up. Herein, we report a novel approach for producing and tuning the emission of freestanding colloidal of amorphous porous silicon nanoparticles (which should not be confused with bulk amorphous silicon nor with porous silicon) via a controlled oxidation without relying on size of nanoparticles. This oxidation increases local strain in the disordered network that causes orbital interactions which modifies the band-gap but a new hybridization.

The Effect of Starting Silicon Crystal Structure on Photoluminescence Intensity of Porous Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
W. B. Dubbelday ◽  
S. D. Russell ◽  
K. L. Kavanagh
Keyword(s):  
Porous Silicon ◽  
Single Crystal ◽  
Amorphous Silicon ◽  
Silicon Crystal ◽  
Single Crystal Silicon ◽  
Luminescent Materials ◽  
Photoluminescence Intensity ◽  
Crystal Silicon ◽  
Chemical Etch ◽  
Porosity Measurements

ABSTRACTIn previous work we reported that porous silicon (PS) films formed using a dilute HF:HNO3 chemical etch on polycrystalline, implant damaged single crystal, or amorphous starting material have luminescent characteristics that differ from PS fabricated on single crystal silicon1. Polycrystalline and implant damaged porous silicon exhibits brighter luminescence compared to single crystal silicon etched under identical conditions. No photoluminescence is detected from the porous amorphous silicon. In this work these effects are examined using HF:NaNO2 solutions with freely available NO2. The accelerated etching effects from work damage are reduced, and the PS from polycrystalline and implant damaged silicon luminesce with the same intensity as the PS from single crystal silicon. Again, etched amorphous silicon does not luminesce. TEM and EDX porosity measurements are used to determine the differences in structure and etching characteristics between the luminescent and non-luminescent materials.

scholarly journals Micro-Raman Scattering of Nanoscale Silicon in Amorphous and Porous Silicon

2017 ◽  
Vol 231 (9) ◽  
Author(s):  
Sangeetha Periasamy ◽  
Sasirekha Venkidusamy ◽  
Ragavendran Venkatesan ◽  
Jeyanthinath Mayandi ◽  
Joshua Pearce ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Porous Silicon ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Nanostructures ◽  
Micro Raman Spectroscopy ◽  
Nanostructured Silicon ◽  
Quartz Substrates

Abstract:The size effect of nanoscale silicon in both amorphous and porous silicon was investigated with micro-Raman spectroscopy. Silicon nanostructures in amorphous silicon were deposited on quartz substrates by plasma enhanced chemical vapor deposition (PECVD) with deposition powers of 15, 30 and 50 W. Micro-Raman spectra of the nanostructured silicon show the T

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