Исследование однородности состава по толщине слоев GaInAsP, полученных на подложках InP методом газофазной эпитаксии
GaInPAs/InP heterostructures grown by low pressure (0.1 bar, 600 oC) metal-organic chemical vapor phase deposition were investigated. The thicknesses of grown GaInAsP layers were about 1 µm. For the epitaxial layers Ga<sub>1-x</sub>In<sub>x</sub>P<sub>1-y</sub>As<sub>y)</sub> with average compositions of x = 0.77 – 0.87 and y = 0.07 – 0.42 the variation of V group elements content y with the epilayer depth were revealed, weher the compositions of V-group elements were changed up to Δy = 0.1 atomic fractions in V group elements sublattice. In most cases, y change occurs in a GaInAsP region up to 200 nm thick adjacent to the InP. In some cases, y changes throughout the whole GaInPAs layer thickness. Fo the epitaxial layers with a satisfactory crystal perfection the less was the mismatch between the substrate and the GaInPAs epitaxial layer, the smaller was the value of Δy. For GaInPAs layers characterized by a low degree of crystal perfection and a high lattice mismatch between GaInAsP and InP layers, the value of Δy was about zero. These data let us suggest that the incorporation of atoms of the V group in the epitaxial layer strongly depends on elastic deformation of the growing monolayer, that is mismatched with the underlying crystal surface.
