DCD and Low T Pl Determination of Bandgap Dependence on Composition for Mocvd Grown InGaAs/InP

1987 ◽  
Vol 102 ◽  
Author(s):  
I. C. Bassignana ◽  
C. J. Miner ◽  
N. Puetz
Keyword(s):  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Recombination Energy ◽  
Double Crystal ◽  
Lattice Match ◽  
Metal Organic

ABSTRACTThis work reports a detailed study of the bound exciton recombination energy measured by low temperature (7K) photoluminescence, as a function of the relative lattice mismatch between the InGaAs epitaxial layers and the substrate measured by double crystal x-ray diffraction. Nominally undoped lμm and 2μm epitaxial layers of InGaAs/InP were grown by metal organic chemical vapor deposition (MOCVD). All InGaAs epitaxial layers used in this study show a single narrow rocking curve peak (FWHM < 25 arc-sec) and only a single narrow PL peak (FWHM < 2.5 meV). Near lattice match the PL energy varies linearly with the mismatch but the absolute value of the PL energy at lattice match is a function of the type of substrate used.

scholarly journals Исследование однородности состава по толщине слоев GaInAsP, полученных на подложках InP методом газофазной эпитаксии

2019 ◽  
Vol 53 (11) ◽  
pp. 1512
Author(s):  
Г.С. Гагис ◽  
Р.В. Левин ◽  
А.Е. Маричев ◽  
Б.В. Пушный ◽  
М.П. Щеглов ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Lattice Mismatch ◽  
Crystal Surface ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Epitaxial Layers ◽  
Crystal Perfection ◽  
Vapor Phase Deposition ◽  
Low Degree ◽  
Metal Organic

GaInPAs/InP heterostructures grown by low pressure (0.1 bar, 600 oC) metal-organic chemical vapor phase deposition were investigated. The thicknesses of grown GaInAsP layers were about 1 µm. For the epitaxial layers Ga<sub>1-x</sub>In<sub>x</sub>P<sub>1-y</sub>As<sub>y)</sub> with average compositions of x = 0.77 – 0.87 and y = 0.07 – 0.42 the variation of V group elements content y with the epilayer depth were revealed, weher the compositions of V-group elements were changed up to Δy = 0.1 atomic fractions in V group elements sublattice. In most cases, y change occurs in a GaInAsP region up to 200 nm thick adjacent to the InP. In some cases, y changes throughout the whole GaInPAs layer thickness. Fo the epitaxial layers with a satisfactory crystal perfection the less was the mismatch between the substrate and the GaInPAs epitaxial layer, the smaller was the value of Δy. For GaInPAs layers characterized by a low degree of crystal perfection and a high lattice mismatch between GaInAsP and InP layers, the value of Δy was about zero. These data let us suggest that the incorporation of atoms of the V group in the epitaxial layer strongly depends on elastic deformation of the growing monolayer, that is mismatched with the underlying crystal surface.

High-operating-temperature MWIR photodetector based on a InAs/GaSb superlattice grown by MOCVD

2022 ◽  
Vol 43 (1) ◽  
pp. 012303
Author(s):  
Xiujun Hao ◽  
Yan Teng ◽  
He Zhu ◽  
Jiafeng Liu ◽  
Hong Zhu ◽  
...  
Keyword(s):  
Lattice Mismatch ◽  
Operating Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Cutoff Wavelength ◽  
X Ray Diffraction ◽  
High Crystalline Quality ◽  
High Operating Temperature ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Abstract We demonstrate a high-operating-temperature (HOT) mid-wavelength InAs/GaSb superlattice heterojunction infrared photodetector grown by metal–organic chemical vapor deposition. High crystalline quality and the near-zero lattice mismatch of a InAs/GaSb superlattice on an InAs substrate were evidenced by high-resolution X-ray diffraction. At a bias voltage of –0.1 V and an operating temperature of 200 K, the device exhibited a 50% cutoff wavelength of ~ 4.9 μm, a dark current density of 0.012 A/cm2, and a peak specific detectivity of 2.3 × 109 cm·Hz1/2 /W.

scholarly journals Исследование возможности изготовления напряженных сверхрешеток InAs/GaSb методом газофазной эпитаксии из металлоорганических соединений

2019 ◽  
Vol 53 (2) ◽  
pp. 273
Author(s):  
Р.В. Левин ◽  
В.Н. Неведомский ◽  
Н.Л. Баженов ◽  
Г.Г. Зегря ◽  
Б.В. Пушный ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Recombination Energy ◽  
Long Wavelength ◽  
Carrier Recombination ◽  
First Results ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractThe first results showing the possibility of manufacturing InAs/GaSb superlattices by the metal-organic chemical vapor deposition (MOCVD) method are presented. The possibility of manufacturing heterostructures with an InAs/GaSb strained superlattice with layer thicknesses of 2–4 nm is experimentally demonstrated. The 77-K electroluminescence spectra of the structures show a long-wavelength peak at around 5 . 0 μm (0 . 25 eV). This peak is probably associated with the strained superlattice because solid solutions that could form on the basis of composite compounds do not provide this carrier-recombination energy.

Epitaxial Growth and Characterization of Nonpolar A-Plane AlGaN-Based Multiple Quantum Wells

2018 ◽  
Vol 934 ◽  
pp. 8-12
Author(s):  
Jian Guo Zhao ◽  
Xiong Zhang ◽  
Jia Qi He ◽  
Shuai Chen ◽  
Zi Li Wu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Chemical Vapor ◽  
Multiple Quantum Wells ◽  
Modulation Method ◽  
Duty Ratio ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Metal Organic

A serious of non-polar a-plane AlGaN-based multiple quantum wells (MQWs) were successfully grown on the semi-polar r-plane sapphire substrate with metal organic chemical vapor deposition technology. Intense MQWs-related emission peaks at an emission wavelength covered from 277-294 nm were observed based on the photoluminescence measurement. It was found that the employment of the trimethyl-aluminum (TMAl) flow duty-ratio modulation method which was developed based on the two-way pulsed-flows growth technique played a crucial role to control the Al composition of the non-polar a-plane AlGaN epi-layers. The non-polar a-plane AlGaN-based MQWs were deposited with the new developed TMAl flow duty-ratio modulation technique. Evident-3th order X-ray diffraction (XRD) satellite peak was observed from the high resolution-XRD measurement, proving the successful growth of non-polar a-plane AlGaN-based MQWs with abrupt hetero-interfaces.

scholarly journals Properties and Orientation of Antiferroelectric Lead Zirconate Thin Films Grown by MOCVD

1998 ◽  
Vol 541 ◽  
Author(s):  
Nan Chen ◽  
G. R. Bai ◽  
O. Auciello ◽  
R. E. Koritala ◽  
M. T. Lanagan
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Lead Zirconate ◽  
Dielectric Constants ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Antiferroelectric Phase ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractSingle-phase polycrystalline PbZrO3 (PZ) thin films, 3000-6000 A thick, have been grown by metal-organic chemical vapor deposition (MOCVD) on (111)Pt/Ti/SiO2/Si substrates at ≍525°C. X-ray diffraction analysis indicated that the PZ films grown on (111)Pt/Ti/SiO2/Si (Pt/Tgi/Si) showed preferred pseudocubic (110) orientation. In contrast, PZ films grown on 150 A thick PbTiO3 (PT) template layers exhibited a pseudocubic (100) preferred orientation, and PZ films deposited on TiO2 template layers consisted of randomly oriented grains. The PZ films grown on Pt/Ti/Si with or without templates exhibited dielectric constants of 120-200 and loss tangents of 0.01-0.0. The PZ films with (110) orientation exhibited an electric-field-inducedtransformation from the antiferroelectric phase to the ferroelectric phase with a polarization of ≍34 µC/cm2, and the energy that was stored during switching was 7.1 J/cm3. The field needed to excite the ferroelectric state and that needed to revert to the antiferroelectric state were 50 and 250 kV/cm, respectively. Relationships between the MOCVD processing and the film microstructure and properties are discussed.

Investigation of Oxygen Vacancies in Micro-Patterned PZT Thin Films Using Raman Spectroscopy

2009 ◽  
Vol 421-422 ◽  
pp. 135-138
Author(s):  
Ken Nishida ◽  
Minoru Osada ◽  
Shintaro Yokoyama ◽  
Takafumi Kamo ◽  
Takashi Fujisawa ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Oxygen Vacancies ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Vapor Phase Deposition ◽  
Pzt Films ◽  
Metal Organic

Micro-patterned Pb(Zr,Ti)O3 (PZT) films with dot-pattern were grown by metal organic chemical vapor phase deposition (MOCVD). Micro-patterned Pb(Zr,Ti)O3 (PZT) films were formed on dot-patterned SrRuO3 (SRO) buffer layer that was prepared by MOCVD through the metal mask on (111)Pt/Ti/SiO2/Si substrate. The orientation of dot-patterned PZT films was ascertained by the micro-beam x-ray diffraction (XRD) and their crystallinity was characterized by Raman spectroscopy. It was found that PZT films were oriented to (111) on dot-pattern, while (100)/(001) out of dot-pattern and the amount of oxygen vacancies at the circumference of the dot-pattern were larger than that of center of dot-pattern.

Preparation and Characterization of High Mobility Nb-Doped SnO2 Transparent Conducting Films

2020 ◽  
Vol 993 ◽  
pp. 869-875
Author(s):  
Lin An He ◽  
Cai Na Luan ◽  
Di Wang ◽  
Yong Le ◽  
Jin Ma
Keyword(s):  
Hall Mobility ◽  
High Mobility ◽  
Chemical Vapor ◽  
Growth Direction ◽  
Light Transmittance ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Metal Organic ◽  
Good Transparency

Metal organic chemical vapor deposition (MOCVD) was employed for the preparation of niobium (Nb)-doped SnO2 films on SiO2 glass substrates. The structure, optical and electrical properties of the Nb-doped SnO2 films were systemically studied. The X-ray diffraction results indicated that the polycrystalline rutile SnO2 films were obtained with a preferred SnO2 [110] growth direction. Among which, the 5.4 at.% Nb-doped SnO2 film showed the lowest resistivity of 1.0×10-3 Ω∙cm and the highest Hall mobility of 74 cm2∙V-1∙s-1. The average visible light transmittance of the 5.4 at.% Nb-doped SnO2 sample was more than 79%. The obtained Nb-doped SnO2 films exhibited low resistivity, high Hall mobility and good transparency, which might have wide applications in electric and photoelectric devices.

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