scholarly journals Влияние быстрого термического отжига на распределение атомов азота в GaAsN/GaAs

2021 ◽  
Vol 55 (11) ◽  
pp. 1077
Author(s):  
А.А. Лазаренко ◽  
К.Ю. Шубина ◽  
Е.В. Никитина ◽  
Е.В. Пирогов ◽  
А.М. Мизеров ◽  
...  
Keyword(s):  
High Resolution ◽  
Crystal Lattice ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Solutions ◽  
Photoluminescence Spectroscopy ◽  
Gaas Crystal ◽  
X Ray ◽  
Before And After

The article investigates the effect of rapid thermal annealing of ternary GaAs1-xNx/GaAs solid solutions on the distribution of nitrogen atoms in the crystal lattice. The samples are studied by photoluminescence spectroscopy and high-resolution X-ray diffractometry. Due to the size and electronegativity mismatch of nitrogen and arsenic atoms, nitrogen is incorporated unevenly into the GaAs crystal lattice. Options of the nitrogen atoms arrangement in the GaAs crystal lattice before and after rapid thermal annealing are shown.

X-ray electrono-optical and SIMS characterization of Si crystals implanted with Bi ions before and after rapid thermal annealing

1995 ◽  
Vol 30 (1) ◽  
pp. 129-133 ◽  
Author(s):  
J. Auleytner ◽  
J. Adamczewska ◽  
A. Barcz ◽  
J. Górecka ◽  
K. Regiński
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
X Ray ◽  
Before And After

Rapid Thermal Annealing of Low-Energy P and B Implants in Silicon, Optimized by High Resolution X-Ray Diffraction

1994 ◽  
Vol 342 ◽  
Author(s):  
Jos G.E. Klappe ◽  
István Bársony ◽  
Pierre H. Woerlee ◽  
Tom W. Ryan ◽  
P. Alkemade
Keyword(s):  
High Resolution ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Defect Formation ◽  
Simulation Software ◽  
Low Energy ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
X Ray ◽  
Dopant Atoms

ABSTRACTIn this paper, low-energy (45 keV) implantations of phosphorous and boron into silicon were studied. A comparison of doping profiles, secondary defect formation, electrical activation and diode leakage was made between Rapid Thermal Annealing (RTA) and conventional furnace annealing. The samples were analysed by High-Resolution X-Ray Diffraction (HR-XRD), X-TEM, SIMS, spreading resistance (SRP) and sheet resistance measurements.The non-destructive HR-XRD technique combined with the novel simulation software was a very useful tool for the defect characterisation and for the choice of the optimum annealing temperature. Furthermore estimations of electrically active dopant atoms were made with HR-XRD by measurement of the strain. With RTA a substitutional dopant concentration of a factor 2 to 4 higher than with furnace annealing can be obtained, for P and B respectively. Electrical measurements show that not all of the substitutional dopants are electrically active, however. Thus estimates of the electrically active dopant atoms with HR-XRD require further study. Furthermore it appeared that RTA was superior to furnace anneal for lowering sheet resistances, defect removal and dopant profile broadening. However, furnace anneal gave the best results for diode leakage currents. This indicates that RTA processing needs to be further refined or that combined RTA/furnace processes need to be developed.

Ajustement par recuits rapides RTA (rapid thermal annealing) des contraintes dans des couches minces de tungstène utilisées comme absorbant pour des masques à rayons X

1991 ◽  
Vol 69 (3-4) ◽  
pp. 451-455 ◽  
Author(s):  
H. Lafontaine ◽  
J. F. Currie ◽  
S. Boily ◽  
M. Chaker ◽  
H. Pépin
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Rf Power ◽  
X Ray ◽  
Stress Changes ◽  
Different Temperatures ◽  
Absorbing Layer ◽  
Good Agreement ◽  
Sputtering System

Tungsten thin films are deposited with a triode sputtering system in order to obtain an absorbing layer for X-ray masks. The mechanical stress is studied as a function of different pressure and RF power conditions during deposition. Rapid thermal annealing at different temperatures and durations is performed in order to produce films under low compressive stress. We observe that the stress changes occur over the time scale of seconds at the annealing temperature and that the corresponding activation energies are low (60 meV). Grain growth in a preferred orientation explains the observed changes in stress. The magnitude in the change of stress is in good agreement with a model proposed by Hoffman et al. relating the stress to grain size and grain boundary dimensions. [Journal translation]

Rapid Thermal Annealing Characteristics of Mg Doped InN by X-Ray Diffraction

2013 ◽  
Vol 40 (1) ◽  
pp. 0106003
Author(s):  
王健 Wang Jian ◽  
谢自力 Xie Zili ◽  
张韵 Zhang Yun ◽  
滕龙 Teng Long ◽  
李烨操 Li Yecao ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
X Ray Diffraction ◽  
X Ray ◽  
Mg Doped

Characterizations of Ultra-thin Dielectrics Grown by Microwave Afterglow O2/N2O Plasma Oxidation at Low Temperature with Rapid Thermal Annealing

1995 ◽  
Vol 387 ◽  
Author(s):  
Po-ching Chen ◽  
Klaus Yung-jane Hsu ◽  
Joseph J. Loferski ◽  
Huey-liang Hwang
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Photoelectron Spectroscopy ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Plasma Oxidation ◽  
X Ray ◽  
Thin Dielectrics

AbstractMicrowave afterglow plasma oxidation at a low temperature (600 °C ) and rapid thermal annealing (RTA) were combined to grow high quality ultra-thin dielectrics. This new approach has a low thermal budget. The mid-gap interface state density of oxides pretreated in N2O plasma was decreased to about 5×1010 cm−2eV−1 after rapid thermal annealing at 950 °C.It was found that RTA is very effective for relieving the oxide stress and reducing the interface state density. Nitrogen incorporated in oxides by the N2O plasma pretreatment of the Si surface helped to reduce the interface state density. Microstructures of ultra-thin oxide grown by microwave afterglow oxidation with or without RTA were revealed by extended-X-ray-absorption-finestructure (EXAFS) and X-ray photoelectron spectroscopy (XPS) analysis.

The crystal structure of visible light absorbing piezoelectric semiconductor SrNb2V2O11 revisited: high-resolution X-ray diffraction, vibrational spectroscopy and computational study

2019 ◽  
Vol 7 (18) ◽  
pp. 5497-5505
Author(s):  
Ievgen V. Odynets ◽  
Sergiy Khainakov ◽  
Santiago Garcia-Granda ◽  
Roman Gumeniuk ◽  
Matthias Zschornak ◽  
...  
Keyword(s):  
Crystal Structure ◽  
High Resolution ◽  
Visible Light ◽  
Crystal Lattice ◽  
Vibrational Spectroscopy ◽  
Computational Study ◽  
X Ray Diffraction ◽  
Piezoelectric Semiconductor ◽  
X Ray

The crystal lattice of piezoelectric semiconductor Sr2Nb2V2O11 adopts Cc ordering due to Γ2− mode distortion.

Internal distortion in ceria-doped hafnia solid solutions: High-resolution x-ray diffraction and Raman scattering

2001 ◽  
Vol 64 (13) ◽  
Author(s):  
Hirotaka Fujimori ◽  
Masatomo Yashima ◽  
Satoshi Sasaki ◽  
Masato Kakihana ◽  
Takeharu Mori ◽  
...  
Keyword(s):  
High Resolution ◽  
Raman Scattering ◽  
Solid Solutions ◽  
X Ray Diffraction ◽  
X Ray

Carrier loss by rapid thermal-annealing in Si-doped GaAs grown by MOCVD (metal-organic chemical vapour deposition)

1991 ◽  
Vol 69 (3-4) ◽  
pp. 353-356
Author(s):  
C. Aktik ◽  
J. F. Currie ◽  
F. Bosse ◽  
R. W. Cochrane ◽  
J. Auclair
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Deep Level ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Before And After ◽  
Metal Organic ◽  
Si Doped

Si-doped GaAs epitaxial layers grown by metal-organic chemical vapour deposition exhibit substantial carrier density loss after rapid thermal annealing (RTA) at temperatures higher than 850 °C. Hall-effect, capacitance–voltage, deep-level transient spectroscopy, and secondary ion mass spectroscopy measurements were performed on samples before and after RTA. We show that the reduction of free-carrier concentration in the entire thickness of the epitaxial layer is accompanied by the deterioration of the mobility and the enhancement of donor-like deep-level concentration at 0.305 eV below the conduction band, which is in good agreement with the model of silicon donor neutralization by formation of neutral silicon–hydrogen complexes.

Micro-Raman Characterization of Cluster Carbon Implanted Si before and after Rapid Thermal Annealing

2016 ◽  
Vol 75 (8) ◽  
pp. 605-613
Author(s):  
W. S. Yoo ◽  
K. Kang ◽  
H. Nishigaki ◽  
N. Hasuike ◽  
H. Harima ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Before And After ◽  
Raman Characterization

Rapid Thermal Annealing of Composite TaSi2/n+ Poly-Si Silicide Films

1983 ◽  
Vol 23 ◽  
Author(s):  
D.L. Kwong ◽  
R. Kwor ◽  
B.Y. Tsaur ◽  
K. Daneshvar
Keyword(s):  
Electron Microscopy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealed Sample ◽  
Vlsi Circuits ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
X Ray ◽  
Transmission Electron ◽  
Average Grain Size

ABSTRACTThe formation of composite TaSi2/n+ Poly-Si silicide films through the use of rapid thermal annealing (RTA) is investigated by x-ray diffraction, four point probe, scanning Auger microprobes (SAM) with ion sputter etching, transmission electron microscopy (TEM), scanning electron microscopy (SEM), and capacitance-voltage (C-V) measurements. 0.2 μm polysilicon is deposited on oxidized Si wafer by LPCVD and doped with phosphorus. A layer of 2200 A TaSix is then co-sputtered on polysilicon samples from separate targets. These as-deposited films are then annealed by RTA in an argon ambient for 1 sec. and 10 sec. at various temperatures. X-ray diffraction and SAM results show the rapid formation of a uniform stoichiometric tantalum disilicide via Si migration from polysilicon. TEM micrographs show simlilar results for samples annealed at 1000°C in furnace for 30 min. or by RTA for 1 sec., exhibiting average grain size greater than 1000 A. Sheet resistance of samples annealed by furnace annealing and RTA are comparable. SEM micrographs indicate that the surface morphology of the RTA-annealed sample is superior to that obtained by furnace annealing. These results show that RTA may offer a practical solution to low-resistivity silicide formation in VLSI circuits.

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