Rapid Thermal Annealing Characteristics of Mg Doped InN by X-Ray Diffraction

ABSTRACTThe formation of composite TaSi2/n+ Poly-Si silicide films through the use of rapid thermal annealing (RTA) is investigated by x-ray diffraction, four point probe, scanning Auger microprobes (SAM) with ion sputter etching, transmission electron microscopy (TEM), scanning electron microscopy (SEM), and capacitance-voltage (C-V) measurements. 0.2 μm polysilicon is deposited on oxidized Si wafer by LPCVD and doped with phosphorus. A layer of 2200 A TaSix is then co-sputtered on polysilicon samples from separate targets. These as-deposited films are then annealed by RTA in an argon ambient for 1 sec. and 10 sec. at various temperatures. X-ray diffraction and SAM results show the rapid formation of a uniform stoichiometric tantalum disilicide via Si migration from polysilicon. TEM micrographs show simlilar results for samples annealed at 1000°C in furnace for 30 min. or by RTA for 1 sec., exhibiting average grain size greater than 1000 A. Sheet resistance of samples annealed by furnace annealing and RTA are comparable. SEM micrographs indicate that the surface morphology of the RTA-annealed sample is superior to that obtained by furnace annealing. These results show that RTA may offer a practical solution to low-resistivity silicide formation in VLSI circuits.

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Doping properties of the Ion-Beam-Sputtered SiGe Film

MRS Proceedings ◽

10.1557/proc-441-289 ◽

1996 ◽

Vol 441 ◽

Cited By ~ 1

Author(s):

Wen-Jie Qi ◽

Zhi-Sheng Wang ◽

Zhi-Guang Gu ◽

Guo-Ping Ru ◽

Guo-Bao Jialig ◽

...

Keyword(s):

Ion Implantation ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Ion Beam ◽

X Ray Diffraction ◽

Electrical Measurements ◽

Polycrystalline Structure ◽

X Ray ◽

Post Annealing ◽

And Diffusion

AbstractThe ion-beam-sputtered polycrystalline SiGe film and its doping properties have been studied. Boron and phosphorus have been doped into the sputtered poly-SiGe film by ion implantation and diffusion. To activate the implanted impurities, both rapid thermal annealing and fiirnace annealing have been used. The electrical measurements show that boron and plhosphorus can be doped into sputtered SiGe films and effectively activated by both ion implantation with post-annealing and diffiision. Hall mobilities as high as 31 cm2/V-s and 20 cm2/V.s have been obtained in B-difflhsed and P-diffused SiGe films, respectively. The x-ray diffraction spectra of the sputtered Sifie filhn show its typical polycrystalline structure with (111), (220) and (311) as the preferential orientations.

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Direct Silicidation of Co on Si by Rapid Thermal Annealing

MRS Proceedings ◽

10.1557/proc-52-271 ◽

1985 ◽

Vol 52 ◽

Cited By ~ 8

Author(s):

M. Tabasky ◽

E. S. Bulat ◽

B. M. Ditchek ◽

M. A. Sullivan ◽

S. Shatas

Keyword(s):

Contact Resistance ◽

Sheet Resistance ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Cobalt Silicide ◽

X Ray Diffraction ◽

X Ray ◽

Low Resistivity ◽

Dopant Redistribution

ABSTRACTRapid thermal annealing is used to form cobalt silicide directly on unimplanted as well as B, As, and P implanted wafers. The films are characterized by sheet resistance, X-ray diffraction, SEM, SIMS, and contact resistance measurements. The direct silicidation of cobalt on Si by rapid thermal annealing yields smooth, low resistivity films with minimal dopant redistribution.

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Dislocation sources and slip band nucleation from indents on silicon wafers

Journal of Applied Crystallography ◽

10.1107/s0021889810029894 ◽

2010 ◽

Vol 43 (5) ◽

pp. 1036-1039 ◽

Cited By ~ 12

Author(s):

J. Wittge ◽

A. N. Danilewsky ◽

D. Allen ◽

P. McNally ◽

Z. Li ◽

...

Keyword(s):

Thermal Annealing ◽

Slip Band ◽

Rapid Thermal Annealing ◽

Line Tension ◽

X Ray Diffraction ◽

X Ray ◽

Diffraction Imaging ◽

Dislocation Sources ◽

Nucleation Of Dislocations

The nucleation of dislocations at controlled indents in silicon during rapid thermal annealing has been studied byin situX-ray diffraction imaging (topography). Concentric loops extending over pairs of inclined {111} planes were formed, the velocities of the inclined and parallel segments being almost equal. Following loss of the screw segment from the wafer, the velocity of the inclined segments almost doubled, owing to removal of the line tension of the screw segments. The loops acted as obstacles to slip band propagation.

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Effects of Rapid Thermal Anneals on Boron Implanted GaAs

MRS Proceedings ◽

10.1557/proc-144-471 ◽

1988 ◽

Vol 144 ◽

Cited By ~ 1

Author(s):

R. C. Bowman ◽

P. M. Adams ◽

M. H. Herman ◽

S. E. Buttrill

Keyword(s):

Electron Beam ◽

Raman Scattering ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Lattice Strain ◽

X Ray Diffraction ◽

Double Crystal ◽

X Ray ◽

Conventional Furnace

ABSTRACTRaman scattering, double-crystal x-ray diffraction, and electron beam electroreflectance have been used to assess the damage produced in undoped (100)-GaAs by boron ion implants and the influence of post-implant anneals. Both conventional furnace and rapid thermal annealing treatments were found to remove much of the lattice strain created by the implants. However, considerable disorder also remains after these anneals.

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Phase Formation at Rapid Thermal Annealing of Nickel Contacts on C-Face n-Type 4H-SiC

Materials Science Forum ◽

10.4028/www.scientific.net/msf.483-485.733 ◽

2005 ◽

Vol 483-485 ◽

pp. 733-736 ◽

Cited By ~ 5

Author(s):

Sergio Ferrero ◽

A. Albonico ◽

Umberto M. Meotto ◽

G. Rambolà ◽

Samuele Porro ◽

...

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Ohmic Contacts ◽

Structural Evolution ◽

Auger Spectroscopy ◽

X Ray Diffraction ◽

Electrical Measurements ◽

X Ray ◽

Ohmic Behavior ◽

Semiconductor Interfaces

In this work we report an analysis on Ni/4H-SiC interfaces aimed at optimizing the ohmic contacts. Several thermal cycles have been performed by rapid thermal annealing checking the possible chemical reactions at the metal semiconductor interfaces. Micro x-ray diffraction and micro Raman techniques have been performed in order to study the interface micro structural evolution. Inter diffusion of each element at the Ni - SiC interface was examined using Auger spectroscopy. Electrical measurements have been performed in order to check the ohmic behavior of the contacts. Finally, a correlation between microstructures evolution and electrical behaviors is reported.

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Reaction Kinetics of Sputter-Deposited Ti On SiO2 Substrates during Rapid Thermal Annealing

MRS Proceedings ◽

10.1557/proc-146-255 ◽

1989 ◽

Vol 146 ◽

Cited By ~ 3

Author(s):

E.J. Yun ◽

H.G. Chun ◽

K. Jung ◽

D.L. Kwong ◽

S. Lee

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Electron Spectroscopy ◽

Auger Electron ◽

X Ray Diffraction ◽

Cross Sectional ◽

X Ray ◽

Transmission Electron ◽

Sputter Deposited ◽

Kinetics Of

ABSTRACTIn this paper, the interactions of sputter-deposited Ti on SiO2 substrates during rapid thermal annealing in nitrogen at 550°C - 900°C for 10 - 60 s have been systematically studied using X-ray diffraction, Auger electron spectroscopy, transmission electron diffraction, TEM & cross-sectional TEM, and sheet resistance measurements.

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The Fabrication of Fe-Doped TiCoSb Thin Films by Magnetron Sputtering and Rapid Thermal Annealing

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.341-342.129 ◽

2013 ◽

Vol 341-342 ◽

pp. 129-133

Author(s):

Juan Qin ◽

Niu Yi Sun ◽

Guo Hua Wang ◽

Min Zhang ◽

Wei Min Shi ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

X Ray Diffraction ◽

X Ray ◽

High Seebeck Coefficient ◽

Diffraction Patterns ◽

P Type ◽

Narrow Band Gap Semiconductors

TiCoSb-based half-Heusler compounds, which are narrow band gap semiconductors with a high Seebeck coefficient, have been intensively studied in bulk form but rarely in thin films. In this article TiFexCo1-xSb (x=0, 0.17) thin films were synthesized on n-type single crystal Si (100) and MgO (100) substrates by DC magnetron sputtering followed by rapid thermal annealing. The X-ray diffraction patterns show that Fe doping does not affect the crystallization temperature of TiCoSb phase, but seem to induce the formation of binary phases like TiSb. Hall measurements reveal that the undoped TiCoSb thin films are n-type semiconducting, while TiFe0.2Co0.8Sb turns to p-type with half-order higher carrier concentration of 1.5×1021cm-3. The vibrating sample magnetometer spectrum indicate that the TiCoSb thin film is non-magnetic and TiFexCo1-xSb (x=0.17) is weak magnetic.

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In-Situ x-Ray Diffraction Analysis of TiSi2 Phase Formation from a Titanium-Molybdenum Bilayer

MRS Proceedings ◽

10.1557/proc-441-295 ◽

1996 ◽

Vol 441 ◽

Cited By ~ 2

Author(s):

C. Cabral ◽

L. A. Clevenger ◽

J. M. E. Harper ◽

R. A. Roy ◽

K. L. Saenger ◽

...

Keyword(s):

Diffraction Analysis ◽

Thermal Annealing ◽

Phase Formation ◽

Rapid Thermal Annealing ◽

Polycrystalline Silicon ◽

Silicon Substrates ◽

X Ray Diffraction ◽

Si Substrate ◽

X Ray

AbstractWe demonstrate that the addition of a molybdenum interlayer between titanium and silicon enhances the formation of C54 TiSi2, without bypassing the formation of the C49 TiSi2 phase. In situ x-ray diffraction analysis during rapid thermal annealing, at a rate of 3 °C/s, was used to study the phase formation sequence of TiSi2 starting from a blanket bilayer of Ti on Mo on a polycrystalline Si substrate. It was shown, as in the case without the Mo layer, that the C49 TiSi2 phase forms first, followed by the C54 TiSi2 phase. The results were similar for undoped or arsenic, boron, and phosphorous doped polycrystalline silicon substrates. The temperature range over which the C49 phase is stable is reduced, on average, by 80 °C. The lower end of the range (appearance of C49) is increased by approximately 60 °C and the upper end of the range (disappearance of C49) is decreased by about 20 0C. The orientation of the C49 phase differs in that both the C49(131) and C49(060) orientations are observed, compared to the case without the Mo layer where only the C49(131) orientation is observed.

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A comparison of C54-TiSi2 formation in blanket and submicron gate structures using in situ x-ray diffraction during rapid thermal annealing

Journal of Materials Research ◽

10.1557/jmr.1995.2355 ◽

1995 ◽

Vol 10 (9) ◽

pp. 2355-2359 ◽

Cited By ~ 20

Author(s):

L.A. Clevenger ◽

R.A. Roy ◽

C. Cabral ◽

K.L. Saenger ◽

S. Brauer ◽

...

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

X Ray Diffraction ◽

X Ray ◽

Submicron Structures ◽

Final Orientation

We demonstrate the use of a synchrotron radiation source for in situ x-ray diffraction analysis during rapid thermal annealing (RTA) of 0.35 μm Salicide (self-aligned silicide) and 0.4 μm Polycide (silicided polysilicon) TiSi2 Complementary Metal Oxide Semiconductor (CMOS) gate structures. It is shown that the transformation from the C49 to C54 phase of TiSi2 occurs at higher temperatures in submicron gate structures than in unpatterned blanket films. In addition, the C54 that forms in submicron structures is (040) oriented, while the C54 that forms in unpatterned Salicide films is randomly oriented. Although the preferred oreintation of the initial C49 phase was different in the Salicide and Polycide gate structures, the final orientation of the C54 phase formed was the same. An incomplete conversion of C49 into C54-TiSi2 during the RTA of Polycide gate structures was observed and is attributed to the retarding effects of phosphorus on the transition.

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