scholarly journals Удельное электросопротивление тонких углеродных пленок с различной долей sp-связей

2020 ◽  
Vol 90 (1) ◽  
pp. 149
Author(s):  
И.А. Завидовский ◽  
О.А. Стрелецкий ◽  
О.Ю. Нищак ◽  
А.А. Хайдаров ◽  
А.В. Павликов
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Methane Concentration ◽  
Carbon Films ◽  
Vacuum Deposition ◽  
Deposition Chamber ◽  
Ion Plasma ◽  
Transmission Electron ◽  
Plasma Pulse

The technique of ion-plasma pulse-arc sputtering of graphite in a methane atmosphere has been employed to produce carbon films with different phase composition. Raman spectroscopy and transmission electron microscopy showed that increase of methane concentration in the vacuum deposition chamber leads to the growth of fraction containing sp-hybridized chains. In the investigated films structure, resistivity strongly correlates with the content of sp-hybridized carbon.

The structural changes of polycrystalline film C60/C70: Ni caused by Ni diffusion

1996 ◽  
Vol 11 (12) ◽  
pp. 3146-3151 ◽  
Author(s):  
E. Czerwosz ◽  
P. Byszewski ◽  
R. Diduszko ◽  
H. Wronka ◽  
P. Dluźewski ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Structural Changes ◽  
Thermal Conditions ◽  
Vacuum Deposition ◽  
X Ray Diffraction ◽  
Polycrystalline Structure ◽  
X Ray ◽  
Transmission Electron

C60/C70: Ni films with 1.5 wt. % Ni concentration obtained by vacuum deposition under different thermal conditions have been investigated. The structural changes of the layers were investigated by transmission electron microscopy, electron and x-ray diffraction, and Raman spectroscopy. The polycrystalline structure was detected for the layers grown at approximately 450 K on the substrate. At elevated temperature and maintained temperature gradient on the substrate during the process, the changes of the layer's structure and the formation of Ni microcrystals were observed. The Ni microcrystals (5–10 nm in the diameter) and the elongated shapes dimensioned 10 × 150 nm were perceived.

Study of the Ion-Irradiation Behavior of Advanced SiC Fibers by Raman Spectroscopy and Transmission Electron Microscopy

2014 ◽  
Vol 98 (2) ◽  
pp. 675-682 ◽  
Author(s):  
Juan Huguet-Garcia ◽  
Aurélien Jankowiak ◽  
Sandrine Miro ◽  
Dominique Gosset ◽  
Yves Serruys ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Ion Irradiation ◽  
Sic Fibers ◽  
Transmission Electron ◽  
Irradiation Behavior

scholarly journals Thermal Annealing of High Dose P Implantation in 4H-SiC

2019 ◽  
Vol 963 ◽  
pp. 399-402 ◽  
Author(s):  
Cristiano Calabretta ◽  
Massimo Zimbone ◽  
Eric G. Barbagiovanni ◽  
Simona Boninelli ◽  
Nicolò Piluso ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Epitaxial Layer ◽  
Point Defects ◽  
High Dose ◽  
Double Step ◽  
Post Annealing ◽  
Transmission Electron

In this work, we have studied the crystal defectiveness and doping activation subsequent to ion implantation and post-annealing by using various techniques including photoluminescence (PL), Raman spectroscopy and transmission electron microscopy (TEM). The aim of this work was to test the effectiveness of double step annealing to reduce the density of point defects generated during the annealing of a P implanted 4H-SiC epitaxial layer. The outcome of this work evidences that neither the first 1 hour isochronal annealing at 1650 - 1700 - 1750 °C, nor the second one at 1500 °C for times between 4 hour and 14 hour were able to recover a satisfactory crystallinity of the sample and achieve dopant activations exceeding 1%.

Study of Triangle-Shaped Defects on Nearly On-Axis 4H-SiC Substrates

2016 ◽  
Vol 858 ◽  
pp. 225-228 ◽  
Author(s):  
Ren Wei Zhou ◽  
Xue Chao Liu ◽  
Hui Jun Guo ◽  
H.K. Kong ◽  
Er Wei Shi
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
High Resolution ◽  
Optical Microscopy ◽  
Epitaxial Growth ◽  
Surface Defects ◽  
Micro Raman Spectroscopy ◽  
Transmission Electron

Triangle-shaped defects are one of the most common surface defects on epitaxial growth of 4H-SiC epilayer on nearly on-axis SiC substrate. In this paper, we investigate the feature and structure of such defects using Nomarski optical microscopy (NOM), micro-Raman spectroscopy and high resolution transmission electron microscopy (HR-TEM). It is found that triangle-shaped defects were composed of a thick 3C-SiC polytype, as well as 4H-SiC epilayer.

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