scholarly journals Осаждение фторполимерных покрытий на вращающиеся цилиндрические поверхности методом химического осаждения из газовой фазы, активированной горячей нитью

2021 ◽  
Vol 47 (4) ◽  
pp. 49
Author(s):  
А.И. Сафонов ◽  
С.В. Старинский ◽  
В.С. Суляева
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Rotation Frequency ◽  
Deposition Process ◽  
Rotational Frequency ◽  
Small Radius ◽  
Chemical Vapor Deposition Method ◽  
Hot Wire ◽  
Surface Rotation ◽  
Fluoropolymer Coating

The Hot Wire Chemical Vapor Deposition method has been adapted to deposit fluoropolymer coatings onto rotating cylindrical surfaces with a small radius (less than 20 mm). The effect of the surface rotation frequency on the structure of a thin fluoropolymer coating deposited on it has been investigated. A significant change in the morphology of the formed fluoropolymer coating was found depending on the rotational frequency of the cylindrical surface. One more parameter has been established that makes it possible to change the structure of the formed fluoropolymer coating during the deposition process.

scholarly journals Наращивание слоя Ge на структуру Si/SiO-=SUB=-2-=/SUB=-/Si (100) методом "горячей проволоки"

2020 ◽  
Vol 54 (10) ◽  
pp. 1129
Author(s):  
А.А. Сушков ◽  
Д.А. Павлов ◽  
С.А. Денисов ◽  
В.Ю. Чалков ◽  
Р.Н. Крюков ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Integrated Circuits ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
High Energy ◽  
Buffer Layers ◽  
Chemical Vapor Deposition Process ◽  
Hot Wire ◽  
Vapor Deposition Process

Ge/Si buffer layers grown at different temperatures on Si/SiO2/Si (100) substrates have been fabricated and studied. The Si buffer was grown via molecular beam epitaxy. The Ge layer was produced in a single stage via hot wire chemical vapor deposition process. Structural properties were investigated by high-resolution transmission electron microscopy and reflected high-energy electron diffraction. Such structures can be used in the future as a substrate for growth of high quality light-emitting structures compatible with silicon radiation-resistant integrated circuits. The paper shows the possibility of growth of a single crystal layer of Ge on Si/SiO2/Si (100) through a buffer layer of Si by the hot wire chemical vapor deposition process, and also demonstrates the difficulties that arise in the process of growth of Ge/Si layers on Si/SiO2/Si (100).

Chemical vapor deposition of cobalt using novel cobalt(I) precursors

2002 ◽  
Vol 17 (2) ◽  
pp. 267-270 ◽  
Author(s):  
Hyungsoo Choi ◽  
Sungho Park ◽  
Ho G. Jang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Chemical Vapor Deposition Method ◽  
Gas Phase Reactions ◽  
Reaction Conditions ◽  
Hydride Complexes ◽  
Cobalt Thin Films ◽  
Substrate Temperatures

The deposition of cobalt thin films from cobalt hydride complexes, HCo[P(OR)3]4, where R = methyl, ethyl, i-propyl, and n-butyl, by a chemical vapor deposition method is reported. The new cobalt precursors deposited high-purity cobalt films at substrate temperatures as low as 300 °C without employing hydrogen. The deposited Co films showed smooth and dense surface morphology. The microstructure and growth rate of the deposited films depended on the reaction conditions such as substrate temperature and precursor feed. No gas phase reactions were observed during the deposition process.

scholarly journals Structural Characterization of SiF4, SiH4 and H2 Hot-Wire-Grown Microcrystalline Silicon Thin Films with Large Grains

2001 ◽  
Vol 664 ◽  
Author(s):  
J. J. Gutierrez ◽  
C. E. Inglefield ◽  
C. P. An ◽  
M. C. DeLong ◽  
P. C. Taylor ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Vapor Deposition ◽  
Volume Fraction ◽  
Annealing Treatment ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Hot Wire ◽  
Microcrystalline Silicon ◽  
Crystal Volume

ABSTRACTIn this paper, we present a comprehensive study of microcrystalline silicon thin film samples deposited by a novel growth process intended to maximize their grain size and crystal volume fraction. Using Atomic Force Microscopy, Raman spectroscopy, and x ray diffraction the structural properties of these samples were characterized qualitatively and quantitatively. Samples were grown using a Hot-Wire Chemical Vapor Deposition process with or without a post-growth hot-wire annealing treatment. During Hot-Wire Chemical Vapor Deposition, SiF4 is used along with SiH4 and H2 to grow the thin films. After growth, some samples received an annealing treatment with only SiF4 and H2 present. These samples were compared to each other in order to determine the deposition conditions that maximize grain size. Large microcrystalline grains were found to be aggregates of much smaller crystallites whose size is nearly independent of deposition type and post-annealing treatment. Thin films deposited using the deposition process with SiF4 partial flow rate of 2 sccm and post-growth annealing treatment had the largest aggregate grains ∼.5 µm and relatively high crystal volume fraction.

Electronic Properties of Improved Amorphous Silicon-Germanium Alloys Deposited by a Low Temperature Hot Wire Chemical Vapor Deposition Process

2005 ◽  
Vol 862 ◽  
Author(s):  
Shouvik Datta ◽  
J. David Cohen ◽  
Yueqin Xu ◽  
A. H. Mahan
Keyword(s):  
Chemical Vapor Deposition ◽  
Electronic Properties ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Alloy Sample ◽  
Hot Wire ◽  
Novel Material ◽  
Amorphous Silicon Germanium

AbstractWe report novel material properties of a series of a-Si,Ge:H alloys grown by hot-wire chemical vapor deposition under low filament temperature (˜1800°C) and low substrate temperature (˜200-300°C). These alloys exhibit significantly improved electronic properties including low defect densities and sharp band tails (Urbach energies ≤ 45meV even for Ge fractions as high as 47at.%). On the other hand, comparisons of the transient photocapacitance and transient photocurrent spectra do not indicate very efficient hole collection in these materials. We found two distinct regimes of light-induced degradation in the alloy sample with 29at.% Ge fraction, possibly corresponding to the light induced increase of Ge and Si dangling bonds, respectively.

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