Грибовидная меза-структура для лавинных фотодиодов на гетероструктурах InAlAs/InGaAs

2021 ◽  
Vol 47 (21) ◽  
pp. 36
Author(s):  
Н.А. Малеев ◽  
А.Г. Кузьменков ◽  
М.М. Кулагина ◽  
А.П. Васильев ◽  
С.А. Блохин ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Dark Current ◽  
Molecular Beam ◽  
Avalanche Photodiodes ◽  
Single Mode ◽  
Avalanche Breakdown ◽  
Sensitive Area ◽  
Applied Bias ◽  
Mesa Structure ◽  
Avalanche Breakdown Voltage

Mushroom mesa structure for InAlAs/InGaAs avalanche photodiodes (APD) was proposed and investigated. APD heterostructrures were grown by molecular-beam epitaxy. Fabricated APDs with sensitive area diameter of about 30 micron were passivated by SiN deposition and demonstrate avalanche breakdown voltage Vbr ~ 70-80 V. At applied bias of 0.9 Vbr the dark current was ~ 75-200 nA. The single-mode coupled APDs demonstrate responsivity at a gain of unity is high than 0.5A/W at 1550 nm.

High Gain and High Sensitive Blue-Ultraviolet Avalanche Photodiodes (APDs) of ZnSSe n+-i-p Structure Molecular Beam Epitaxy (MBE) Grown on p-type GaAs Substrates

2005 ◽  
Vol 44 (No. 17) ◽  
pp. L508-L510 ◽  
Author(s):  
Tomoki Abe ◽  
Koshi Ando ◽  
Katsushi Ikumi ◽  
Hiroyasu Maeta ◽  
Junji Naruse ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Avalanche Photodiodes ◽  
High Gain ◽  
Gaas Substrates ◽  
P Type

Si 1- x Ge x /Si Single-Mode Rib Waveguides with 0.5 dB/cm by Molecular Beam Epitaxy

1994 ◽  
Vol 11 (12) ◽  
pp. 734-736
Author(s):  
Yong Gao ◽  
Enke Liu ◽  
Guozheng Li ◽  
Xiding Liu ◽  
Xiangjiu Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Mode ◽  
Rib Waveguides

scholarly journals Особенности роста наноструктур для терагерцовых квантово-каскадных лазеров и их физические свойства

2020 ◽  
Vol 54 (9) ◽  
pp. 902
Author(s):  
Г.Э. Цырлин ◽  
Р.Р. Резник ◽  
А.Е. Жуков ◽  
Р.А. Хабибуллин ◽  
К.В. Маремьянин ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Mode ◽  
Synthesis And Characterization ◽  
Material System ◽  
Quantum Cascade ◽  
Gaas Substrates ◽  
Molecular Beam Epitaxy Method

The data on the synthesis and characterization of structures for a quantum cascade terahertz laser in an AlGaAs/GaAs material system on GaAs substrates using the molecular beam epitaxy method are presented. The features necessary for the implementation of such structures are considered. It was shown that for this geometry almost single-mode lasing is observed at a frequency of ∼ 3 THz up to a temperature of ∼ 60 K.

Single Mode 1.3 µm InGaAsN/GaAs Quantum Well Vertical Cavity Surface Emitting Lasers Grown by Molecular Beam Epitaxy

2004 ◽  
Vol 43 (No. 12A) ◽  
pp. L1555-L1557 ◽  
Author(s):  
Ru-Shang Hsiao ◽  
Jyh-Shyang Wang ◽  
Kun-Feng Lin ◽  
Li Wei ◽  
Hui-Yu Liu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Single Mode ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

Dark Current Reduction in Near Infrared P-I-N Detector Diodes Fabricated from In.75Ga.25As Grown by Molecular Beam Epitaxy on InP Substrates

1996 ◽  
Vol 450 ◽  
Author(s):  
M. Micovic ◽  
W. Z. Cai ◽  
Y. Ren ◽  
J. Neal ◽  
S. F. Nelson ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Current Density ◽  
Dark Current ◽  
Molecular Beam ◽  
Reverse Bias ◽  
Attractive Alternative ◽  
Cutoff Wavelength ◽  
Dark Current Density ◽  
Inp Substrates ◽  
Reference Samples

ABSTRACTWe have investigated several approaches to improve the material quality of lattice-mismatched In.75Ga.25As grown by Molecular Beam Epitaxy (MBE) on (100) InP substrates. They include linear grading of In composition from lattice matched In.53Ga.47As to In.75Ga.25As in a 1 μm buffer layer grown at reduced substrate temperature, in combination with various in situ annealing and material regrowth steps. The material was used for fabrication of mesa-structure p-i-n photodetectors with 2.2 μm cutoff wavelength. The room temperature dark current density at 1 V reverse bias was approximately 2 mA/cm2 in all structures that were subjected to anneal and regrowth process, a factor of three improvement over reference samples which were not subjected to annealing and regrowth. The dark current density at 15 V reverse bias (10 mA/cm2 for the best devices) was at least two orders of magnitude lower in all annealed samples than in reference samples. These results suggest that the MBE grown material can be an attractive alternative to the vapor phase epitaxy (VPE) grown material which is commonly used for fabrication of these detectors.

High‐power single‐mode strained single quantum well InGaAs/AlGaAs lasers grown by molecular beam epitaxy on nonplanar substrates

1990 ◽  
Vol 56 (20) ◽  
pp. 1939-1941 ◽  
Author(s):  
D. J. Arent ◽  
L. Brovelli ◽  
H. Jäckel ◽  
E. Marclay ◽  
H. P. Meier
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Power ◽  
Molecular Beam ◽  
Single Mode ◽  
Single Quantum ◽  
Single Quantum Well
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