scholarly journals HIGH RESOLUTION IMAGING OF BORON DISTRIBUTION ON DIAMOND FILM USING ENERGY FILTERED TEM

2016 ◽  
Vol 2 (1) ◽  
pp. 16
Author(s):  
A. Dimyati ◽  
S. Purwanto ◽  
R. Iskandar
Keyword(s):  
Diamond Film ◽  
Imaging Techniques ◽  
Carbon Film ◽  
Chemical Vapor ◽  
Carbon Layer ◽  
High Resolution Imaging ◽  
Si Substrate ◽  
Transmission Electron ◽  
Resolution Imaging ◽  
Boron Distribution

<p class="TRANSAffiliation"><span>The main difficulty in investigation of thin film systems is the lack of capability to get detail information of the material in nano level due to the low resolution of conventional imaging techniques such as SEM, SIMS etc. In this work Electron Spectroscopy Imaging (ESI) in energy filtered transmission electron microscope (EFTEM) was used to produce a real image of  boron distribution in a diamond film deposited on (111) Si by chemical vapor deposition. The result revealed the layer consists of 1.3 µm thick diamond structured carbon film adjacent to Si substrate and 120 nm amorph carbon layer on top most surface. Boron atoms were distributed uniformly in both layer, however slight higher concentration in the second layer is observed. There was obviously no grain boundary enrichment of Boron atoms observed.</span></p>

Design and Applications of Environmental Cell Transmission Electron Microscope for In Situ Observations of Gas–Solid Reactions

2001 ◽  
Vol 7 (6) ◽  
pp. 494-506 ◽  
Author(s):  
Renu Sharma
Keyword(s):  
Chemical Vapor ◽  
Atomic Level ◽  
Chemical Information ◽  
Oxidation Reduction ◽  
Transmission Electron ◽  
Recent Developments ◽  
Level Information ◽  
Resolution Imaging ◽  
Electron Energy Loss

AbstractThe environmental transmission electron microscopy (E-TEM) is a budding technique for in situ study of gas–solid chemical reactions with numerous applications. Recent improvements in the design have made it possible not only to obtain atomic level information but also the chemical information during the reaction by incorporating an imaging filter or electron energy-loss spectrometer to an E-TEM. We have been involved in modifying a couple of microscopes to incorporate environmental cells in order to convert them into E-TEMs. These microscopes have been used to obtain atomic level information of the structural and chemical changes during dynamic processes by in situ electron diffraction, high-resolution imaging, and electron energyloss spectroscopy. The applications include, but are not limited to, oxidation, reduction, polymerization, nitridation, dehydroxylation, hydroxylation, chemical vapor deposition, etc. We report recent developments in the design and application along with the limitations of an E-TEM.

High Resolution Imaging of As-Grown Sapphire Surfaces

1985 ◽  
Vol 62 ◽  
Author(s):  
Tung Hsu ◽  
S. R. Nutt
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Structural Features ◽  
High Resolution Imaging ◽  
Sapphire Surface ◽  
Surface Steps ◽  
Transmission Electron ◽  
Reflection Electron Microscopy ◽  
Resolution Imaging ◽  
Surface Facets

ABSTRACTSurfaces of commercially grown edge-defined film-fed growth sapphire (EFG α-Al2O3) were studied in the electron microscope using both reflection electron microscopy (REM) and conventional transmission electron microscopy (TEM). The as-grown sapphire surface, ostensibly {1120}, was characterized by “rooftop” structures which were often locally periodic. These rooftop structures consisted of alternating {1120} facets and additional facets inclined a few degrees. The crystallography of the surface facets was analyzed using REM imaging of bulk specimens, and trace analysis of back-thinned plan section TEM specimens. Surface roughness was measured by stylus profilometry. and these measurements were compared to the electron microscopy observations. Fine structural features parallel to <0110> directions were also observed in both REM and TEM experiments, and these were attributed to surface steps of atomic scales.

scholarly journals Recent Advances in Transmission Electron Microscopy for Materials Science at the EMAT Lab of the University of Antwerp

Materials ◽  
2018 ◽  
Vol 11 (8) ◽  
pp. 1304 ◽  
Author(s):  
Giulio Guzzinati ◽  
Thomas Altantzis ◽  
Maria Batuk ◽  
Annick De Backer ◽  
Gunnar Lumbeeck ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Materials Science ◽  
Electron Tomography ◽  
High Resolution Imaging ◽  
Rapid Progress ◽  
Transmission Electron ◽  
The World ◽  
Resolution Imaging ◽  
The University

The rapid progress in materials science that enables the design of materials down to the nanoscale also demands characterization techniques able to analyze the materials down to the same scale, such as transmission electron microscopy. As Belgium’s foremost electron microscopy group, among the largest in the world, EMAT is continuously contributing to the development of TEM techniques, such as high-resolution imaging, diffraction, electron tomography, and spectroscopies, with an emphasis on quantification and reproducibility, as well as employing TEM methodology at the highest level to solve real-world materials science problems. The lab’s recent contributions are presented here together with specific case studies in order to highlight the usefulness of TEM to the advancement of materials science.

scholarly journals Surface cleaning and sample carrier for complementary high-resolution imaging techniques

2020 ◽  
Vol 15 (2) ◽  
pp. 021005
Author(s):  
Pietro Benettoni ◽  
Jia-Yu Ye ◽  
Timothy R. Holbrook ◽  
Federica Calabrese ◽  
Stephan Wagner ◽  
...  
Keyword(s):  
High Resolution ◽  
Imaging Techniques ◽  
Surface Cleaning ◽  
High Resolution Imaging ◽  
Resolution Imaging ◽  
Sample Carrier

scholarly journals O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2450
Author(s):  
Oumaima Abouzaid ◽  
Hussein Mehdi ◽  
Mickael Martin ◽  
Jérémy Moeyaert ◽  
Bassem Salem ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
Organic Chemical ◽  
Silicon Substrates ◽  
Wafer Level ◽  
Si Substrate ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Organic

The epitaxy of III-V semiconductors on silicon substrates remains challenging because of lattice parameter and material polarity differences. In this work, we report on the Metal Organic Chemical Vapor Deposition (MOCVD) and characterization of InAs/GaAs Quantum Dots (QDs) epitaxially grown on quasi-nominal 300 mm Ge/Si(001) and GaAs(001) substrates. QD properties were studied by Atomic Force Microscopy (AFM) and Photoluminescence (PL) spectroscopy. A wafer level µPL mapping of the entire 300 mm Ge/Si substrate shows the homogeneity of the three-stacked InAs QDs emitting at 1.30 ± 0.04 µm at room temperature. The correlation between PL spectroscopy and numerical modeling revealed, in accordance with transmission electron microscopy images, that buried QDs had a truncated pyramidal shape with base sides and heights around 29 and 4 nm, respectively. InAs QDs on Ge/Si substrate had the same shape as QDs on GaAs substrates, with a slightly increased size and reduced luminescence intensity. Our results suggest that 1.3 μm emitting InAs QDs quantum dots can be successfully grown on CMOS compatible Ge/Si substrates.

X-Ray Microanalysis Combined with Monte Carlo Simulation for the Analysis of Layered Thin Films: The Case of Carbon Contamination

2009 ◽  
Vol 15 (2) ◽  
pp. 99-105 ◽  
Author(s):  
Aldo Armigliato ◽  
Rodolfo Rosa
Keyword(s):  
Monte Carlo ◽  
Carbon Film ◽  
Sample Surface ◽  
Scanning Transmission Electron Microscope ◽  
Carbon Layer ◽  
Monte Carlo Code ◽  
X Ray ◽  
Transmission Electron ◽  
The Monte Carlo Method ◽  
Scanning Transmission

AbstractA previously developed Monte Carlo code has been extended to the X-ray microanalysis in a (scanning) transmission electron microscope of plan sections, consisting of bilayers and triple layers. To test the validity of this method for quantification purposes, a commercially available NiOx (x ∼ 1) thin film, deposited on a carbon layer, has been chosen. The composition and thickness of the NiO film and the thickness of the C support layer are obtained by fitting to the three X-ray intensity ratios I(NiK)/I(OK), I(NiK)/I(CK), and I(OK)/I(CK). Moreover, it has been investigated to what extent the resulting film composition is affected by the presence of a contaminating carbon film at the sample surface. To this end, the sample has been analyzed both in the (recommended) “grid downward” geometry and in the upside/down (“grid upward”) situation. It is found that a carbon contaminating film of few tens of nanometers must be assumed in both cases, in addition to the C support film. Consequently, assuming the proper C/NiOx/C stack in the simulations, the Monte Carlo method yields the correct oxygen concentration and thickness of the NiOx film.

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