Performance Improvement of Solution-Processed Organic Floating-Gate Transistor Memories via Tuning the Work Function of Gate Electrodes

2021 ◽  
Author(s):  
Naoyuki Nishida ◽  
Shion Tazuhara ◽  
Reitato Hattori ◽  
Miho Higashinakaya ◽  
Takashi Nagase ◽  
...  
Keyword(s):  
Work Function ◽  
Performance Improvement ◽  
Floating Gate ◽  
Solution Processed ◽  
Gate Electrodes ◽  
Floating Gate Transistor

scholarly journals Nanoparticle floating-gate transistor memory based on solution-processed ambipolar organic semiconductor

2020 ◽  
Vol 185 ◽  
pp. 04071
Author(s):  
Sheng Sun ◽  
Shengdong Zhang
Keyword(s):  
Nonvolatile Memory ◽  
Thin Film Transistor ◽  
Floating Gate ◽  
Pmma Film ◽  
Organic Thin Film ◽  
Simple Method ◽  
Solution Processed ◽  
Floating Gate Transistor ◽  
Electron Carriers ◽  
Bipolar Semiconductor

Organic thin-film transistor memory based on nano-floating-gate nonvolatile memory was demonstrated by a simple method. The gold nanoparticle that fabricated by thermally evaporated acted as the floating gate. Spin coated PMMA film acted as the tunneling layer. A solution-processed ambipolar semiconductor acted as the active layer. Because of the existence of both hole and electron carriers in bipolar semiconductor materials, it is more conducive to the editing and erasing of memories under positive and negative pressure. The memory based on metal nanoparticles and organic bipolar semiconductor shows good read-write function.

scholarly journals Solution-Processed Transparent Conducting Electrodes for Flexible Organic Solar Cells with 16.61% Efficiency

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Juanyong Wan ◽  
Yonggao Xia ◽  
Junfeng Fang ◽  
Zhiguo Zhang ◽  
Bingang Xu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Work Function ◽  
Organic Solar Cells ◽  
High Performance ◽  
High Efficiency ◽  
Electrical Stability ◽  
Solution Processed ◽  
Good Thermal Stability ◽  
Transparent Conducting ◽  
High Flexibility

AbstractNonfullerene organic solar cells (OSCs) have achieved breakthrough with pushing the efficiency exceeding 17%. While this shed light on OSC commercialization, high-performance flexible OSCs should be pursued through solution manufacturing. Herein, we report a solution-processed flexible OSC based on a transparent conducting PEDOT:PSS anode doped with trifluoromethanesulfonic acid (CF3SO3H). Through a low-concentration and low-temperature CF3SO3H doping, the conducting polymer anodes exhibited a main sheet resistance of 35 Ω sq−1 (minimum value: 32 Ω sq−1), a raised work function (≈ 5.0 eV), a superior wettability, and a high electrical stability. The high work function minimized the energy level mismatch among the anodes, hole-transporting layers and electron-donors of the active layers, thereby leading to an enhanced carrier extraction. The solution-processed flexible OSCs yielded a record-high efficiency of 16.41% (maximum value: 16.61%). Besides, the flexible OSCs afforded the 1000 cyclic bending tests at the radius of 1.5 mm and the long-time thermal treatments at 85 °C, demonstrating a high flexibility and a good thermal stability.

Two-objective metaheuristic optimization for floating gate transistor-based CMOS-MEMS inertial sensors

2021 ◽  
Author(s):  
B. Granados-Rojas ◽  
M. A. Reyes-Barranca ◽  
Y. E. González-Navarro ◽  
G. S. Abarca-Jiménez ◽  
M. A. Alemán-Arce ◽  
...  
Keyword(s):  
Inertial Sensors ◽  
Floating Gate ◽  
Metaheuristic Optimization ◽  
Floating Gate Transistor ◽  
Cmos Mems

scholarly journals Engineering the work function of solution-processed electrodes of silver nanocrystal thin film through surface chemistry modification

APL Materials ◽  
2018 ◽  
Vol 6 (12) ◽  
pp. 121105 ◽  
Author(s):  
Mingi Seong ◽  
Haneun Kim ◽  
Seung-Wook Lee ◽  
Donghun Kim ◽  
Soong Ju Oh
Keyword(s):  
Thin Film ◽  
Surface Chemistry ◽  
Work Function ◽  
Solution Processed ◽  
Surface Chemistry Modification

scholarly journals Effect of Step Gate Work Function on InGaAs p-TFET for Low Power Switching Applications

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3166
Author(s):  
Sayed Md Tariful Azam ◽  
Abu Saleh Md Bakibillah ◽  
Md Tanvir Hasan ◽  
Md Abdus Samad Kamal
Keyword(s):  
Low Power ◽  
Work Function ◽  
Potential Candidate ◽  
Gate Electrodes ◽  
The Future ◽  
Work Function Difference ◽  
High Transconductance ◽  
Dual Material ◽  
Gate Work Function ◽  
Function Difference

In this study, we theoretically investigated the effect of step gate work function on the InGaAs p-TFET device, which is formed by dual material gate (DMG). We analyzed the performance parameters of the device for low power digital and analog applications based on the gate work function difference (∆ϕS-D) of the source (ϕS) and drain (ϕD) side gate electrodes. In particular, the work function of the drain (ϕD) side gate electrodes was varied with respect to the high work function of the source side gate electrode (Pt, ϕS = 5.65 eV) to produce the step gate work function. It was found that the device performance varies with the variation of gate work function difference (∆ϕS-D) due to a change in the electric field distribution, which also changes the carrier (hole) distribution of the device. We achieved low subthreshold slope (SS) and off-state current (Ioff) of 30.89 mV/dec and 0.39 pA/µm, respectively, as well as low power dissipation, when the gate work function difference (∆ϕS-D = 1.02 eV) was high. Therefore, the device can be a potential candidate for the future low power digital applications. On the other hand, high transconductance (gm), high cut-off frequency (fT), and low output conductance (gd) of the device at low gate work function difference (∆ϕS-D = 0.61 eV) make it a viable candidate for the future low power analog applications.

Work function and thermal stability of Ti1−xAlxNy for dual metal gate electrodes

2002 ◽  
Vol 81 (22) ◽  
pp. 4192-4194 ◽  
Author(s):  
Tae-Ho Cha ◽  
Dae-Gyu Park ◽  
Tae-Kyun Kim ◽  
Se-Aug Jang ◽  
In-Seok Yeo ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Work Function ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes ◽  
Dual Metal ◽  
Thermal Stability Of
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