Advanced simulations on laser annealing: explosive crystallization and phonon transport corrections

2020 ◽  
Author(s):  
Alberto Sciuto ◽  
Ioannis Deretzis ◽  
Giuseppe Fisicaro ◽  
Salvatore F. Lombardo ◽  
Antonino La Magna ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Phonon Transport ◽  
Explosive Crystallization

Optical, Structural and Electrical Characteristics of Explosively Crystallized Si Thin Films on Glass Substrates

1981 ◽  
Vol 4 ◽  
Author(s):  
G. Auvert ◽  
D. Bensahel ◽  
A. Perio ◽  
F. Morin ◽  
G.A. Rozgonyi ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Laser Annealing ◽  
The State ◽  
Electrical Characteristics ◽  
Glass Substrates ◽  
Explosive Crystallization ◽  
Cw Laser ◽  
Structural And Electrical Properties ◽  
Si Films

ABSTRACTExplosive Crystallization occurs in cw laser annealing on a-Si films deposited on glass substrates at laser scan speeds higher than 30 cm/sec. Optical, structural and electrical properties of the crystallized films at various laser scan speeds confirm the existence of two kinds of explosive growth depending on the state of crystallinity of the starting material.

Fast Scan Laser Annealing

1981 ◽  
Vol 4 ◽  
Author(s):  
John T. Schott
Keyword(s):  
Vertical Integration ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Silicon On Insulator ◽  
Pulsed Laser Annealing ◽  
Explosive Crystallization ◽  
Deposited Energy ◽  
Scan Speed ◽  
Time And Energy ◽  
Anneal Time

ABSTRACTLaser-annealing phenomena have typically been divided into two distinct realms. Pulsed lasers involved very short anneal times and small deposited energy densities. Slowly scanned cw lasers involved intermediate times (ms range) and larger energy densities. Repetitively scanned electron beams have extended the range of anneal time and energy density toward conventional thermal processing. This paper examines the regime between pulsed laser annealing and conventional cw laser annealing. By greatly increasing the scan speed of the laser, annealing times and deposited energy densities are reduced and approach those of pulsed laser annealing. Applications are discussed in the areas of silicon-on-insulator recrystallization, low resistivity poly, vertical integration, local lateral seeding, explosive crystallization, and line-source simulation.

Crystallization Kinetics of Hydrogenated Amorphous Silicon During Pulsed Excimer Laser Annealing

1992 ◽  
Vol 258 ◽  
Author(s):  
S. E. Ready ◽  
J. H. Roh ◽  
J. B. Boyce ◽  
G. B. Anderson
Keyword(s):  
Amorphous Silicon ◽  
Crystallization Kinetics ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Molten Silicon ◽  
Excimer Laser Annealing ◽  
Pulsed Laser Annealing ◽  
Explosive Crystallization ◽  
Silicon Bulk ◽  
Kinetics Of

ABSTRACTExplosive crystallization of amorphous silicon (a-Si) during pulsed laser annealing occurs at an intermediate laser energy fluence above the threshold for surface melting. Mediated by a molten silicon layer which is undercooled with respect to crystalline silicon and above the melting point of a-Si, the crystallization interface drives down into the sample, sustaining itself due to the difference in the latent heats of the crystalline and amorphous silicon. Explosive crystallization has been the subject of numerous studies which have for the most part been restricted to ion implanted amorphized layers in silicon bulk samples. In this study we examine the crystallization kinetics of vapor deposited thin films of hydrogenated a-Si for films of differing hydrogen content and substrate temperature. We reevaluate current models of interface and nucleation kinetics qualitatively in light of these results. The fundamental physical mechanisms in these non-equilibrium phase transitions during pulsed laser annealing are discussed.

Epitaxial Ge/GaAs Heterostructures by Scanned CW Laser Annealing of a-GE Layers on GaAS

1981 ◽  
Vol 4 ◽  
Author(s):  
J.E. Greene ◽  
K.C. Cadien ◽  
D. Lubben ◽  
G.A. Hawkins ◽  
G.R. Erikson ◽  
...  
Keyword(s):  
Single Crystal ◽  
Laser Power ◽  
Laser Annealing ◽  
Beam Diameter ◽  
Primary Interest ◽  
Explosive Crystallization ◽  
Gaas Substrates ◽  
Scan Rate ◽  
Single Crystal Films ◽  
Crystal Films

ABSTRACTEpitaxial regrowth of Ge/GaAs heterostructures by scanned laser annealing of amorphous Ge films on GaAs substrates has been studied as a function of laser power and scan rate. At least eight regimes representing different film regrowth characteristics were observed. Of these, two were of primary interest. At low powers (between~1.6 and 3.2 W for a beam diameter of~40 μm) and scan rates between 1 and 400 cm/sec, polycrystalline Ge with a (100) preferred orientation was formed by an “explosive” crystallization mechanism. At higher powers, and over a scan rate range of 25 to 400 cm/sec, single crystal metastable (GaAs)1−x Gexalloys were obtained by liquid phase regrowth. Typical film resistivities, ρ, were as follows: as-deposited ρ=180Ωcm; polycrystalline films, ρ=3 × 10−2 Ωcm; single crystal films,ρ=9×10−4Ωcm.

Between explosive crystallization and amorphous regrowth: Inhomogeneous solidification upon pulsed‐laser annealing of amorphous silicon

1987 ◽  
Vol 50 (9) ◽  
pp. 507-509 ◽  
Author(s):  
J. J. P. Bruines ◽  
R. P. M. van Hal ◽  
B. H. Koek ◽  
M. P. A. Viegers ◽  
H. M. J. Boots
Keyword(s):  
Amorphous Silicon ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Explosive Crystallization

Hierarchical structures lead to high thermoelectric performance in Cum+nPb100SbmTe100Se2m (CLAST)

2021 ◽  
Author(s):  
Siqi Wang ◽  
Yu Xiao ◽  
Yongjin Chen ◽  
Shang Peng ◽  
Dongyang Wang ◽  
...  
Keyword(s):  
Hierarchical Structures ◽  
Phonon Transport ◽  
Thermoelectric Performance

Hierarchical microstructures lead to high thermoelectric performance in Cum+nPb100SbmTe100Se2m (CLAST) through synergistically optimizing carrier and phonon transport.

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