Device Applications of Metal-2D-Materials Interfaces  A Short Review

The electronic energy band gaps of 2D-materials are known to spread over a wide range from zero in graphene to > 6eV in hexagonal boron nitride (h-BN). Various combinations of such engineered nanomaterials offer a number of novel device applications involving their unique optical, electronic, and thermal properties along with their higher charge carrier mobilities and saturation limited drift velocities. Structurally, these nanomaterials have single or multiple monolayers stuck together, which are not only suitable for flexible electron devices and circuits but also in preparing heterostructures (lateral as well as vertical configurations) that form super lattices with different kinds of band alignments. Such possibilities offer flexible control over the charge carrier transport in these materials via numerous types of exciton formations. Their extra sensitivity towards the presence of atomic, molecular and nanoparticulate species in their vicinity is the most significant aspect of these 2D-materials. This is the reason behind studying them in detail for detecting the presence of extremely low concentrations of the analyte that are not achievable in conventional sensors. For translating the above-said superlative properties of these fast emerging families of 2-D nanomaterials into usable devices and circuits, applying the conventional device fabrication technologies poses a real challenge. The experimental results reported in the context of forming usable interfaces between a metal and 2D-nanomaterial are examined here to assess their current status and future prospects. Their widespread applications are certainly anticipated in the fields like printed micro/nano sensors, large area electronics and printed intelligence with special reference to their emerging usages in Internet of Things (IoT) in the near future.

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Large-area integration of two-dimensional materials and their heterostructures by wafer bonding

Nature Communications ◽

10.1038/s41467-021-21136-0 ◽

2021 ◽

Vol 12 (1) ◽

Author(s):

Arne Quellmalz ◽

Xiaojing Wang ◽

Simon Sawallich ◽

Burkay Uzlu ◽

Martin Otto ◽

...

Keyword(s):

Wafer Bonding ◽

Semiconductor Manufacturing ◽

Large Scale ◽

Hexagonal Boron Nitride ◽

2D Materials ◽

High Volume ◽

Two Dimensional ◽

Wafer Level ◽

Large Area ◽

Wide Range

AbstractIntegrating two-dimensional (2D) materials into semiconductor manufacturing lines is essential to exploit their material properties in a wide range of application areas. However, current approaches are not compatible with high-volume manufacturing on wafer level. Here, we report a generic methodology for large-area integration of 2D materials by adhesive wafer bonding. Our approach avoids manual handling and uses equipment, processes, and materials that are readily available in large-scale semiconductor manufacturing lines. We demonstrate the transfer of CVD graphene from copper foils (100-mm diameter) and molybdenum disulfide (MoS2) from SiO2/Si chips (centimeter-sized) to silicon wafers (100-mm diameter). Furthermore, we stack graphene with CVD hexagonal boron nitride and MoS2 layers to heterostructures, and fabricate encapsulated field-effect graphene devices, with high carrier mobilities of up to $$4520\;{\mathrm{cm}}^2{\mathrm{V}}^{ - 1}{\mathrm{s}}^{ - 1}$$ 4520 cm 2 V − 1 s − 1 . Thus, our approach is suited for backend of the line integration of 2D materials on top of integrated circuits, with potential to accelerate progress in electronics, photonics, and sensing.

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In situ epitaxial engineering of graphene and h-BN lateral heterostructure with a tunable morphology comprising h-BN domains

NPG Asia Materials ◽

10.1038/s41427-019-0162-6 ◽

2019 ◽

Vol 11 (1) ◽

Cited By ~ 6

Author(s):

Dechao Geng ◽

Jichen Dong ◽

Lay Kee Ang ◽

Feng Ding ◽

Hui Ying Yang

Keyword(s):

Density Functional ◽

Hexagonal Boron Nitride ◽

2D Materials ◽

Chemical Vapor ◽

Large Area ◽

Atomic Lattice ◽

Cvd Method ◽

Wide Range ◽

Tunable Morphology

Abstract Graphene and hexagonal boron nitride (h-BN), as typical two-dimensional (2D) materials, have long attracted substantial attention due to their unique properties and promise in a wide range of applications. Although they have a rather large difference in their intrinsic bandgaps, they share a very similar atomic lattice; thus, there is great potential in constructing heterostructures by lateral stitching. Herein, we present the in situ growth of graphene and h-BN lateral heterostructures with tunable morphologies that range from a regular hexagon to highly symmetrical star-like structure on the surface of liquid Cu. The chemical vapor deposition (CVD) method is used, where the growth of the h-BN is demonstrated to be highly templated by the graphene. Furthermore, large-area production of lateral G-h-BN heterostructures at the centimeter scale with uniform orientation is realized by precisely tuning the CVD conditions. We found that the growth of h-BN is determined by the initial graphene and symmetrical features are produced that demonstrate heteroepitaxy. Simulations based on the phase field and density functional theories are carried out to elucidate the growth processes of G-h-BN flakes with various morphologies, and they have a striking consistency with experimental observations. The growth of a lateral G-h-BN heterostructure and an understanding of the growth mechanism can accelerate the construction of various heterostructures based on 2D materials.

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Chlorosulfuric acid-assisted production of functional 2D materials

npj 2D Materials and Applications ◽

10.1038/s41699-021-00215-2 ◽

2021 ◽

Vol 5 (1) ◽

Author(s):

Mohsen Moazzami Gudarzi ◽

Maryana Asaad ◽

Boyang Mao ◽

Gergo Pinter ◽

Jianqiang Guo ◽

...

Keyword(s):

Hexagonal Boron Nitride ◽

2D Materials ◽

Real Life ◽

Large Area ◽

Polar Solvents ◽

Aspect Ratios ◽

Two Dimensional Materials ◽

Liquid Phase Exfoliation

AbstractThe use of two-dimensional materials in bulk functional applications requires the ability to fabricate defect-free 2D sheets with large aspect ratios. Despite huge research efforts, current bulk exfoliation methods require a compromise between the quality of the final flakes and their lateral size, restricting the effectiveness of the product. In this work, we describe an intercalation-assisted exfoliation route, which allows the production of high-quality graphene, hexagonal boron nitride, and molybdenum disulfide 2D sheets with average aspect ratios 30 times larger than that obtained via conventional liquid-phase exfoliation. The combination of chlorosulfuric acid intercalation with in situ pyrene sulfonate functionalisation produces a suspension of thin large-area flakes, which are stable in various polar solvents. The described method is simple and requires no special laboratory conditions. We demonstrate that these suspensions can be used for fabrication of laminates and coatings with electrical properties suitable for a number of real-life applications.

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Anisotropic charge carrier transport in free-standing hexagonal boron nitride thin films

Applied Physics Express ◽

10.7567/apex.9.065801 ◽

2016 ◽

Vol 9 (6) ◽

pp. 065801 ◽

Cited By ~ 8

Author(s):

Rajendra Dahal ◽

Kawser Ahmed ◽

Jia Woei Wu ◽

Adam Weltz ◽

James Jian-Qiang Lu ◽

...

Keyword(s):

Thin Films ◽

Boron Nitride ◽

Charge Carrier ◽

Carrier Transport ◽

Hexagonal Boron Nitride ◽

Charge Carrier Transport ◽

Free Standing

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The Bakerian Lecture, 1988 - Amorphous semiconductors: a new generation of electronic materials

Proceedings of the Royal Society of London Series A - Mathematical and Physical Sciences ◽

10.1098/rspa.1988.0124 ◽

1988 ◽

Vol 420 (1859) ◽

pp. 201-218 ◽

Cited By ~ 3

Keyword(s):

Thin Film ◽

Electronic Properties ◽

Carrier Transport ◽

Field Effect Transistors ◽

Consumer Products ◽

Amorphous Semiconductors ◽

Film Material ◽

Large Area ◽

Wide Range ◽

New Generation

The review deals with the electronic properties and recent applications of amorphous silicon (a-Si), which can be regarded as the first member of a new generation of electronically viable thin-film materials. After a brief introduction to the structure and the distribution of electronic states in a-Si the preparation of the material by the decomposition of silane in a radio-frequency glow discharge is discussed. The presence of hydrogen in the deposition process is of crucial importance; saturation of defect states, particularly of dangling bonds in the growing structure, leads to a material with a remarkably low density of gap states. Effective substitutional doping from the gas phase now becomes possible with wide-ranging control of the electronic properties. A brief discussion of the doping mechanism in amorphous solids is followed by a summary of carrier transport mechanisms in a-Si, investigated by fast transient techniques. The possibility of doping in a-Si has removed a major limitation in the a-semiconductor field and has, during the past 10 years, led to an upsurge in applied interest in this electronically controllable thin film material. A summary of the present state of applied developments, many already in industrial production, is given. Two groups are discussed in some detail. The first, the photovoltaic development, is based on the a-Si p–i–n junction, and forms part of a wide range of consumer products, but larger area photovoltaic panels are now in production. In the second major development a-Si field effect transistors are used as the addressable elements in large area liquid crystal displays. Remarkable progress has been made with thin film colour displays for small portable television sets. The use of a-Si elements in addressable linear image sensing arrays for telefax applications, coupled with a-Si high-voltage transistor arrays in the associated printers, represents an important step towards an integrated a-Si technology in large-area applications.

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Plasmonic 2D Materials: Overview, Advancements, Future Prospects and Functional Applications

10.5772/intechopen.101580 ◽

2021 ◽

Author(s):

Muhammad Aamir Iqbal ◽

Maria Malik ◽

Wajeehah Shahid ◽

Waqas Ahmad ◽

Kossi A. A. Min-Dianey ◽

...

Keyword(s):

Surface Plasmons ◽

Light Emission ◽

Hexagonal Boron Nitride ◽

2D Materials ◽

Optoelectronic Device ◽

Two Dimensional ◽

Graphene Oxides ◽

Plasmonic Materials ◽

Energy Applications ◽

Device Applications

Plasmonics is a technologically advanced term in condensed matter physics that describes surface plasmon resonance where surface plasmons are collective electron oscillations confined at the dielectric-metal interface and these collective excitations exhibit profound plasmonic properties in conjunction with light interaction. Surface plasmons are based on nanomaterials and their structures; therefore, semiconductors, metals, and two-dimensional (2D) nanomaterials exhibit distinct plasmonic effects due to unique confinements. Recent technical breakthroughs in characterization and material manufacturing of two-dimensional ultra-thin materials have piqued the interest of the materials industry because of their extraordinary plasmonic enhanced characteristics. The 2D plasmonic materials have great potential for photonic and optoelectronic device applications owing to their ultra-thin and strong light-emission characteristics, such as; photovoltaics, transparent electrodes, and photodetectors. Also, the light-driven reactions of 2D plasmonic materials are environmentally benign and climate-friendly for future energy generations which makes them extremely appealing for energy applications. This chapter is aimed to cover recent advances in plasmonic 2D materials (graphene, graphene oxides, hexagonal boron nitride, pnictogens, MXenes, metal oxides, and non-metals) as well as their potential for applied applications, and is divided into several sections to elaborate recent theoretical and experimental developments along with potential in photonics and energy storage industries.

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Preliminary Results on Large Area X-ray a-SiC:H Multilayer Detectors with Optically Addressed Readout

MRS Proceedings ◽

10.1557/proc-0989-a19-02 ◽

2007 ◽

Vol 989 ◽

Cited By ~ 1

Author(s):

Manuela Vieira ◽

Yuri Vygranenko ◽

Miguel Fernandes ◽

Paula Louro ◽

Pedro Sanguino ◽

...

Keyword(s):

Numerical Simulation ◽

Charge Carrier ◽

Carrier Transport ◽

Image Sensor ◽

Semiconductor Layer ◽

Charge Carrier Transport ◽

Large Area ◽

X Ray ◽

Switching Mode ◽

Area X

AbstractThis paper investigates a feasibility of using a large area image sensor with an optically addressed readout for medical X-ray diagnostic imaging. A device prototype comprises a multilayer glass/ZnO:Al/p (a-SiC:H)/i (a-Si:H)/ n (a-SiC:H)/ i(a-Si:H)/p (a-SiC:H)/ a SiNx/ITO structure coupled to a scintillator layer. Here, the p-i-n-i-p structure works in both sensing and switching modes depending on the biasing conditions. A numerical simulation is used to optimize the semiconductor layer thicknesses in order to achieve a photocurrent matching between back-to-back diodes in switching mode. The charge carrier transport within the p-i-n-i-p structure is also analyzed under different electric and optical biasing conditions. A physical model supports the results.

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