scholarly journals Large-area integration of two-dimensional materials and their heterostructures by wafer bonding

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Arne Quellmalz ◽  
Xiaojing Wang ◽  
Simon Sawallich ◽  
Burkay Uzlu ◽  
Martin Otto ◽  
...  

AbstractIntegrating two-dimensional (2D) materials into semiconductor manufacturing lines is essential to exploit their material properties in a wide range of application areas. However, current approaches are not compatible with high-volume manufacturing on wafer level. Here, we report a generic methodology for large-area integration of 2D materials by adhesive wafer bonding. Our approach avoids manual handling and uses equipment, processes, and materials that are readily available in large-scale semiconductor manufacturing lines. We demonstrate the transfer of CVD graphene from copper foils (100-mm diameter) and molybdenum disulfide (MoS2) from SiO2/Si chips (centimeter-sized) to silicon wafers (100-mm diameter). Furthermore, we stack graphene with CVD hexagonal boron nitride and MoS2 layers to heterostructures, and fabricate encapsulated field-effect graphene devices, with high carrier mobilities of up to $$4520\;{\mathrm{cm}}^2{\mathrm{V}}^{ - 1}{\mathrm{s}}^{ - 1}$$ 4520 cm 2 V − 1 s − 1 . Thus, our approach is suited for backend of the line integration of 2D materials on top of integrated circuits, with potential to accelerate progress in electronics, photonics, and sensing.

Author(s):  
Faisal Ahmad ◽  
Amir Mansoori ◽  
Sonia Bansal ◽  
Th. S. Dhahi ◽  
Shamim Ahmad

The electronic energy band gaps of 2D-materials are known to spread over a wide range from zero in graphene to > 6eV in hexagonal boron nitride (h-BN). Various combinations of such engineered nanomaterials offer a number of novel device applications involving their unique optical, electronic, and thermal properties along with their higher charge carrier mobilities and saturation limited drift velocities. Structurally, these nanomaterials have single or multiple monolayers stuck together, which are not only suitable for flexible electron devices and circuits but also in preparing heterostructures (lateral as well as vertical configurations) that form super lattices with different kinds of band alignments. Such possibilities offer flexible control over the charge carrier transport in these materials via numerous types of exciton formations. Their extra sensitivity towards the presence of atomic, molecular and nanoparticulate species in their vicinity is the most significant aspect of these 2D-materials. This is the reason behind studying them in detail for detecting the presence of extremely low concentrations of the analyte that are not achievable in conventional sensors. For translating the above-said superlative properties of these fast emerging families of 2-D nanomaterials into usable devices and circuits, applying the conventional device fabrication technologies poses a real challenge. The experimental results reported in the context of forming usable interfaces between a metal and 2D-nanomaterial are examined here to assess their current status and future prospects. Their widespread applications are certainly anticipated in the fields like printed micro/nano sensors, large area electronics and printed intelligence with special reference to their emerging usages in Internet of Things (IoT) in the near future. 


2019 ◽  
Vol 11 (1) ◽  
Author(s):  
Dechao Geng ◽  
Jichen Dong ◽  
Lay Kee Ang ◽  
Feng Ding ◽  
Hui Ying Yang

Abstract Graphene and hexagonal boron nitride (h-BN), as typical two-dimensional (2D) materials, have long attracted substantial attention due to their unique properties and promise in a wide range of applications. Although they have a rather large difference in their intrinsic bandgaps, they share a very similar atomic lattice; thus, there is great potential in constructing heterostructures by lateral stitching. Herein, we present the in situ growth of graphene and h-BN lateral heterostructures with tunable morphologies that range from a regular hexagon to highly symmetrical star-like structure on the surface of liquid Cu. The chemical vapor deposition (CVD) method is used, where the growth of the h-BN is demonstrated to be highly templated by the graphene. Furthermore, large-area production of lateral G-h-BN heterostructures at the centimeter scale with uniform orientation is realized by precisely tuning the CVD conditions. We found that the growth of h-BN is determined by the initial graphene and symmetrical features are produced that demonstrate heteroepitaxy. Simulations based on the phase field and density functional theories are carried out to elucidate the growth processes of G-h-BN flakes with various morphologies, and they have a striking consistency with experimental observations. The growth of a lateral G-h-BN heterostructure and an understanding of the growth mechanism can accelerate the construction of various heterostructures based on 2D materials.


Author(s):  
Md Rubayat-E Tanjil ◽  
Stanley Agbakansi ◽  
Keegan Phayden Suero ◽  
Ossie Douglas ◽  
Yunjo Jeong ◽  
...  

Abstract Two-dimensional (2D) materials have recently garnered significant interest due to their novel and emergent properties. A plethora of 2D materials have been discovered and intensively studied, such as graphene, hexagonal boron nitride, transitionmetal dichalcogenides (TMDCs), and other metallic compound MXenes (nitrides, phosphides, and hydroxides), as well as elemental 2D materials (borophene, germanene, phosphorene, silicene, etc.). Considering the widespread interest in conventional van der Waals 2D materials, two-dimensional metallic nanosheets (2DMNS), a recent addition to the 2D materials family, have exhibited diverse potential spanning optics, electronics, magnetics, catalysis, etc. However, the close-packed, non-layered structure and non-directional, isotropic bonding of metallic materials make it difficult to access metals in their 2D forms, unlike 2D van der Waals materials, which have intrinsically layered structure (strong in-plane bonding in addition to the weak interlayer interaction). Until now, conventional top-down and bottom-up synthesis schemes of these 2DMNS have encountered various limitations such as precursor availability, substrate incompatibility, difficulty of control over thickness and stoichiometry, limited thermal budget, etc. To overcome these manufacturing limitations of 2DMNS, here we report a facile, rapid, large-scale, and cost-effective fabrication technique of nanometer-scale copper (Cu) 2DMNS via iterative rolling, folding, and calendering (RFC) that is readily generalizable to other conventional elemental metallic materials. Overall, we successfully show a scalable fabrication technique of 2DMNS.


2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Mohsen Moazzami Gudarzi ◽  
Maryana Asaad ◽  
Boyang Mao ◽  
Gergo Pinter ◽  
Jianqiang Guo ◽  
...  

AbstractThe use of two-dimensional materials in bulk functional applications requires the ability to fabricate defect-free 2D sheets with large aspect ratios. Despite huge research efforts, current bulk exfoliation methods require a compromise between the quality of the final flakes and their lateral size, restricting the effectiveness of the product. In this work, we describe an intercalation-assisted exfoliation route, which allows the production of high-quality graphene, hexagonal boron nitride, and molybdenum disulfide 2D sheets with average aspect ratios 30 times larger than that obtained via conventional liquid-phase exfoliation. The combination of chlorosulfuric acid intercalation with in situ pyrene sulfonate functionalisation produces a suspension of thin large-area flakes, which are stable in various polar solvents. The described method is simple and requires no special laboratory conditions. We demonstrate that these suspensions can be used for fabrication of laminates and coatings with electrical properties suitable for a number of real-life applications.


2021 ◽  
Author(s):  
Pin Tian ◽  
Hongbo Wu ◽  
Libin Tang ◽  
Jinzhong Xiang ◽  
Rongbin Ji ◽  
...  

Abstract Two-dimensional (2D) materials exhibit many unique optical and electronic properties that are highly desirable for application in optoelectronics. Here, we report the study of photodetector based on 2D Bi2O2Te grown on n-Si substrate. The 2D Bi2O2Te material was transformed from sputtered Bi2Te3 ultrathin film after rapid annealing at 400 ℃ for 10 min in air atmosphere. The photodetector was capable of detecting a broad wavelength from 210 nm to 2.4 μm with excellent responsivity of up to 3x105 and 2x104 AW-1, and detectivity of 4x1015 and 2x1014 Jones at deep ultraviolet (UV) and short-wave infrared (SWIR) under weak light illumination, respectively. The effectiveness of 2D materials in weak light detection was investigated by analysis of the photocurrent density contribution. Importantly, the facile growth process with low annealing temperature would allow direct large-scale integration of the 2D Bi2O2Te materials with complementary metal-oxide–semiconductor (CMOS) technology.


2019 ◽  
Vol 867 ◽  
pp. 146-194 ◽  
Author(s):  
G. L. Richard ◽  
A. Duran ◽  
B. Fabrèges

We derive a two-dimensional depth-averaged model for coastal waves with both dispersive and dissipative effects. A tensor quantity called enstrophy models the subdepth large-scale turbulence, including its anisotropic character, and is a source of vorticity of the average flow. The small-scale turbulence is modelled through a turbulent-viscosity hypothesis. This fully nonlinear model has equivalent dispersive properties to the Green–Naghdi equations and is treated, both for the optimization of these properties and for the numerical resolution, with the same techniques which are used for the Green–Naghdi system. The model equations are solved with a discontinuous Galerkin discretization based on a decoupling between the hyperbolic and non-hydrostatic parts of the system. The predictions of the model are compared to experimental data in a wide range of physical conditions. Simulations were run in one-dimensional and two-dimensional cases, including run-up and run-down on beaches, non-trivial topographies, wave trains over a bar or propagation around an island or a reef. A very good agreement is reached in every cases, validating the predictive empirical laws for the parameters of the model. These comparisons confirm the efficiency of the present strategy, highlighting the enstrophy as a robust and reliable tool to describe wave breaking even in a two-dimensional context. Compared with existing depth-averaged models, this approach is numerically robust and adds more physical effects without significant increase in numerical complexity.


2018 ◽  
Vol 20 (47) ◽  
pp. 29939-29950 ◽  
Author(s):  
Pooja Jamdagni ◽  
Anil Thakur ◽  
Ashok Kumar ◽  
P. K. Ahluwalia ◽  
Ravindra Pandey

Considering the rapid development of experimental techniques for fabricating 2D materials in recent years, various monolayers are expected to be experimentally realized in the near future.


2016 ◽  
Vol 144 (11) ◽  
pp. 4349-4372 ◽  
Author(s):  
Julien Savre ◽  
James Percival ◽  
Michael Herzog ◽  
Chris Pain

Abstract This paper presents the first attempt to apply the compressible nonhydrostatic Active Tracer High-Resolution Atmospheric Model–Fluidity (ATHAM-Fluidity) solver to a series of idealized atmospheric test cases. ATHAM-Fluidity uses a hybrid finite-element discretization where pressure is solved on a continuous second-order grid while momentum and scalars are computed on a first-order discontinuous grid (also known as ). ATHAM-Fluidity operates on two- and three-dimensional unstructured meshes, using triangular or tetrahedral elements, respectively, with the possibility to employ an anisotropic mesh optimization algorithm for automatic grid refinement and coarsening during run time. The solver is evaluated using two-dimensional-only dry idealized test cases covering a wide range of atmospheric applications. The first three cases, representative of atmospheric convection, reveal the ability of ATHAM-Fluidity to accurately simulate the evolution of large-scale flow features in neutral atmospheres at rest. Grid convergence without adaptivity as well as the performances of the Hermite–Weighted Essentially Nonoscillatory (Hermite-WENO) slope limiter are discussed. These cases are also used to test the grid optimization algorithm implemented in ATHAM-Fluidity. Adaptivity can result in up to a sixfold decrease in computational time and a fivefold decrease in total element number for the same finest resolution. However, substantial discrepancies are found between the uniform and adapted grid results, thus suggesting the necessity to improve the reliability of the approach. In the last three cases, corresponding to atmospheric gravity waves with and without orography, the model ability to capture the amplitude and propagation of weak stationary waves is demonstrated. This work constitutes the first step toward the development of a new comprehensive limited area atmospheric model.


Nano Letters ◽  
2012 ◽  
Vol 12 (2) ◽  
pp. 714-718 ◽  
Author(s):  
Kang Hyuck Lee ◽  
Hyeon-Jin Shin ◽  
Jinyeong Lee ◽  
In-yeal Lee ◽  
Gil-Ho Kim ◽  
...  

2021 ◽  
Author(s):  
Mubashir A. Kharadi ◽  
Gul Faroz A. Malik ◽  
Farooq A. Khanday

2D materials like transition metal dichalcogenides, black phosphorous, silicene, graphene are at the forefront of being the most potent 2D materials for optoelectronic applications because of their exceptional properties. Several application-specific photodetectors based on 2D materials have been designed and manufactured due to a wide range and layer-dependent bandgaps. Different 2D materials stacked together give rise to many surprising electronic and optoelectronic phenomena of the junctions based on 2D materials. This has resulted in a lot of popularity of 2D heterostructures as compared to the original 2D materials. This chapter presents the progress of optoelectronic devices (photodetectors) based on 2D materials and their heterostructures.


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