Deep Trapping Centers Relaxation in Transistors and Integrated Circuits

2020 ◽  
Vol 25 (6) ◽  
pp. 568-572
Author(s):  
V.P. Krylov ◽  
◽  
A.M. Bogachev ◽  
Keyword(s):  
Integrated Circuits ◽  
Surface Defects ◽  
Defect Formation ◽  
Deep Level ◽  
Electronic Component ◽  
Semiconductor Electronic ◽  
Cmos Ic ◽  
Reliability Assessments ◽  
Transient Spectroscopy ◽  
Capacitance Transient

For ensuring the efficiency of the semiconductor electronic component base for apparatus, responsible for application, an optimal combination of statistical (group) and physical-technological (individual) reliability assessments is required. In the paper a thermodynamic approach, based on the deep-level transient spectroscopy in semiconductors promising means of individual rejection of potentially unreliable electronic component base has been proposed. For transistors and integrated circuits, the dependences of the amplitude of capacitance transient, caused by the bulk and surface defects of various nature on the repetition rate of electric filling pulses of deep levels, have been obtained. For multi-pin CMOS IC, the two-pole connection schemes to the spectrometer have been proposed. The obtained dependences show individual differences of studied specimens of various manufacturers as well as individual specimens from the same production batch. The performed studies have shown the promises of using the methods of the relaxation spectroscopy of deep level as the means of additional quality control of semiconductor devices and CMOS microcircuits both in the production process and in rejection of the items with potential defects, not specified by the project of engineering defect formation.

Point Defect Evolution During Rapid Thermal Annealing of Si+-Implanted GaAs.

1987 ◽  
Vol 92 ◽  
Author(s):  
M. Levinson ◽  
C. A. Armiento ◽  
S. S. P. Shah
Keyword(s):  
Point Defect ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Defect Formation ◽  
Deep Level ◽  
Dopant Activation ◽  
Defect Reactions ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Dlts Spectra

ABSTRACTThe point defect reactions in GaAs by which ion implant damage is removed and implanted dopants are activated remain poorly understood. Deep level capacitance transient spectroscopy (DLTS) has been used to study the effects of rapid thermal annealing (RTA) on Si-implant damage generated defects. In low implant dose samples, the results of RTA are similar to those of furnace anneals and also agree well with previous reports of boron-implanted and neutron-irradiated material. In contrast to this, higher dose samples showed much smaller than expected apparent defect concentrations. After RTA, very broad DLTS spectra and relatively little EL2 or EL3 defect formation was observed. The significance of these results with regard to the mechanisms of dopant activation and damage removal are discussed.

scholarly journals Deep level relaxation spectroscopy and nondestructive testing of potential defects in the semiconductor electronic component base

2019 ◽  
Vol 29 (2) ◽  
pp. 35-44
Author(s):  
V. P. Krylov ◽  
A. M. Bogachev ◽  
T. Yu. Pronin
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Experimental Studies ◽  
Electronic Component ◽  
Semiconductor Electronic ◽  
Accuracy Of Measurements ◽  
Industrial Monitoring ◽  
Relaxation Responses ◽  
Transient Spectroscopy ◽  
Temperature Scanning

This article deals with the possibilities of methods of the deep-level transient spectroscopy in semiconductors and the reasons constraining their application for industrial control of potential defects of the semiconductor electronic component base. Among the reasons there are an ambiguous interpretation of the results of indirect measurements, the lack of the domestic regulatory base and software and hardware tools, a variety of algorithms and techniques of measurements and processing of results. Models of hardware transformations of weak relaxation responses of microelectronic barrier structures are proposed. The methodology and results of experimental studies of the characteristics of potential defects of serial semiconductor diodes by the method of frequency-temperature scanning using the developed models are described. The obtained results indicate the possibility of a significant increase in accuracy of measurements of parameters of potential defects. The conclusion is made about the need to organize and perform interlaboratory checking on uniform samples to promote the methods of the deep-level transient spectroscopy in the practice of industrial monitoring.

Improvement of Local Deep Level Transient Spectroscopy for Microscopic Evaluation of SiO2/4H-SiC Interfaces

2018 ◽  
Vol 924 ◽  
pp. 289-292
Author(s):  
Yuji Yamagishi ◽  
Yasuo Cho
Keyword(s):  
Deep Level ◽  
Interface State ◽  
State Density ◽  
Trap States ◽  
Accurate Analysis ◽  
Microscopic Evaluation ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Full Waveforms ◽  
Dimensional Mapping

We demonstrate our new local deep level spectroscopy system improved for more accurate analysis of trap states at SiO2/4H-SiC interfaces. Full waveforms of the local capacitance transient with the amplitude of attofarads and the time scale of microseconds were obtained and quantitatively analyzed. The local energy distribution of interface state density in the energy range of EC − Eit = 0.31–0.38 eV was obtained. Two-dimensional mapping of the interface states showed inhomogeneous contrasts with the lateral spatial scale of several hundreds of nanometers, suggesting that the physical origin of the trap states at SiO2/SiC interfaces is likely to be microscopically clustered.

Study of the deep level related to a platinum–dihydrogen complex in Si by capacitance transient spectroscopy under uniaxial stress

2003 ◽  
Vol 66 (1-4) ◽  
pp. 352-357 ◽  
Author(s):  
Y. Kamiura ◽  
Y. Iwagami ◽  
K. Fukuda ◽  
Y. Yamashita ◽  
T. Ishiyama ◽  
...  
Keyword(s):  
Deep Level ◽  
Uniaxial Stress ◽  
Transient Spectroscopy ◽  
Capacitance Transient

Shallow and Deep Level Defects in GaN

1995 ◽  
Vol 395 ◽  
Author(s):  
W. Götz ◽  
N.M. Johnson ◽  
D.P. Bour ◽  
C. Chen ◽  
H. Liu ◽  
...  
Keyword(s):  
Deep Level ◽  
Variable Temperature ◽  
Shallow Donor ◽  
Deep Levels ◽  
Electron Photoemission ◽  
Hall Effect Measurements ◽  
Transient Spectroscopy ◽  
P Type ◽  
Capacitance Transient ◽  
Threshold Energies

ABSTRACTShallow and deep electronic defects in MOCVD-grown GaN were characterized by variable temperature Hall effect measurements, deep level transient spectroscopy (DLTS) and photoemission capacitance transient spectroscopy (O-DLTS). Unintentionally and Si-doped, n-type and Mg-doped, p-type GaN films were studied. Si introduces a shallow donor level into the band gap of GaN at ∼Ec - 0.02 eV and was found to be the dominant donor impurity in our unintentionally doped material. Mg is the shallowest acceptor in GaN identified to date with an electronic level at ∼Ev + 0.2 eV. With DLTS deep levels were detected in n-type and p-type GaN and with O-DLTS we demonstrate several deep levels with optical threshold energies for electron photoemission in the range between 0.87 and 1.59 eV in n-type GaN.

Deep Centers and Their Capture Barriers in MOCVD-Grown GaN

2001 ◽  
Vol 692 ◽  
Author(s):  
Daniel K. Johnstonea ◽  
Mohamed Ahoujjab ◽  
Yung Kee Yeoc ◽  
Robert L. Hengeholdc ◽  
Louis Guidod
Keyword(s):  
Deep Level ◽  
Chemical Vapor ◽  
Energy Concentration ◽  
Organic Chemical ◽  
High Concentration ◽  
Current Voltage ◽  
Carrier Traps ◽  
Metal Organic ◽  
Transient Spectroscopy ◽  
Capacitance Transient

AbstractGaN and its related alloys are being widely developed for blue-ultraviolet emitting and detection devices as well as high temperature, high power, and high frequency electronics. Despite the fast improvement in the growth of good quality GaN, a high concentration of deep level defects of yet unconfirmed origins are still found in GaN. For both optical and electronic devices, these deep carrier traps and/or recombination centers are very important and must therefore be understood. In the present work, deep level defects in GaN grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD) have been investigated using Isothermal Capacitance Transient Spectroscopy (ICTS) and Current Voltage Temperature (IVT) measurements. Several deep level electron traps were characterized, obtaining the emission energy, concentration, and capture cross section from a fit of exponentials to the capacitance transients. ICTS was also used to reveal information about the capture kinetics involved in the traps found in GaN by measuring the amplitude of the capacitance transient at each temperature. At a reduced filling pulse where the traps were not saturated, several of them showed marked reduction in capacitance transient amplitude when compared to the transient amplitude measured under conditions where the filling pulse saturates the traps. This reduction in transient amplitude indicates that there is a barrier to carrier capture, in addition to the emission barrier. It has been found that several traps had capture barriers that were significant fractions of the emission energies up to 0.32 eV. These capture barriers may lead to persistent photoconductivity and reduced trapping. In this paper, deep level emission energies as well as capture barrier energies found in MOCVD-grown GAN will be discussed.

Relationship between Constant Voltage and Constant Capacitance DLTS

1983 ◽  
Vol 20 (2) ◽  
pp. 145-149
Author(s):  
W. S. Lau ◽  
Y. W. Lam ◽  
C. C. Chang
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Constant Voltage ◽  
Unified Approach ◽  
Deep Traps ◽  
Capacitance Voltage ◽  
Voltage Transient ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
The Relationship

A unified approach is presented in the derivation of equations for the constant-voltage capacitance transient and constant-capacitance voltage transient in deep-level transient spectroscopy (DLTS), and for the relationship between them. The validity of these equations is independent of the device and nature of deep traps.

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