Characterization of High-Specific Impulse, High-Power Ion Optics

Author(s):  
George Williams ◽  
T. Haag ◽  
J. Sovey
Author(s):  
Ashraf. EL-Sherif ◽  
Mahmoud Hassan ◽  
Ayman Mokhtar ◽  
Ahmed Samy

Lubricants ◽  
2018 ◽  
Vol 6 (1) ◽  
pp. 4 ◽  
Author(s):  
Enrico Ciulli ◽  
Paola Forte ◽  
Mirko Libraschi ◽  
Lorenzo Naldi ◽  
Matteo Nuti

Author(s):  
Conrad Andrews ◽  
Ljubodrag Boskovic ◽  
Dejan S. Filipovic
Keyword(s):  

2022 ◽  
Vol 43 (1) ◽  
pp. 012302
Author(s):  
K. S. Zhuravlev ◽  
A. L. Chizh ◽  
K. B. Mikitchuk ◽  
A. M. Gilinsky ◽  
I. B. Chistokhin ◽  
...  

Abstract The design, manufacturing and DC and microwave characterization of high-power Schottky barrier InAlAs/InGaAs back-illuminated mesa structure photodiodes are presented. The photodiodes with 10 and 15 μm mesa diameters operate at ≥40 and 28 GHz, respectively, have the output RF power as high as 58 mW at a frequency of 20 GHz, the DC responsivity of up to 1.08 A/W depending on the absorbing layer thickness, and a photodiode dark current as low as 0.04 nA. We show that these photodiodes provide an advantage in the amplitude-to-phase conversion factor which makes them suitable for use in high-speed analog transmission lines with stringent requirements for phase noise.


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