Characterization of Wide Bandgap Device for Cryogenically-Cooled Power Electronics in Aircraft Applications

2018 ◽  
Author(s):  
Zheyu Zhang ◽  
Handong Gui ◽  
Ren Ren ◽  
Fred Wang ◽  
Leon Tolbert ◽  
...  
Keyword(s):  
Power Electronics ◽  
Wide Bandgap ◽  
Wide Bandgap Device

Surface Characterization of Silicon Carbide Following Shallow Implantation of Palladium Ions

2005 ◽  
Vol 900 ◽  
Author(s):  
Claudiu I. Muntele ◽  
Sergey Sarkisov ◽  
Iulia Muntele ◽  
Daryush Ila
Keyword(s):  
Silicon Carbide ◽  
Surface Characterization ◽  
Wide Bandgap ◽  
Electrical Contacts ◽  
Temperature Dependent ◽  
Wide Bandgap Semiconductor ◽  
Hydrogen Sensing ◽  
Fast Switching ◽  
Sensing Applications

ABSTRACTSilicon carbide is a promising wide-bandgap semiconductor intended for use in fabrication of high temperature, high power, and fast switching microelectronics components running without cooling. For hydrogen sensing applications, silicon carbide is generally used in conjunction with either palladium or platinum, both of them being good catalysts for hydrogen. Here we are reporting on the temperature-dependent surface morphology and depth profile modifications of Au, Ti, and W electrical contacts deposited on silicon carbide substrates implanted with 20 keV Pd ions.

scholarly journals Толстые слои alpha-Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- на сапфировых подложках, полученные методом хлоридной эпитаксии

2019 ◽  
Vol 53 (6) ◽  
pp. 789
Author(s):  
А.И. Печников ◽  
С.И. Степанов ◽  
А.В. Чикиряка ◽  
М.П. Щеглов ◽  
М.А. Одноблюдов ◽  
...  
Keyword(s):  
Single Phase ◽  
Film Growth ◽  
Vapour Phase ◽  
Wide Bandgap ◽  
Structural And Optical Properties ◽  
Vapour Phase Epitaxy ◽  
Record Value ◽  
Epitaxial Film Growth ◽  
Thick Layers

This paper reports on epitaxial film growth and characterization of α-Ga2O3, a novel wide bandgap semiconducting material. The films were deposited by halide vapour phase epitaxy on basal plane sapphire substrates. The films were from 0.5 μm to over 10 μm in thickness, the latter being the record value by now. Structural and optical properties of the specimens were studied. All specimens were structurally uniform, single phase, and had a corundum-like r3c structure similar to that of sapphire substrate. It was found that the full width at half maximum for the (0006) α-Ga2O3 reflection varies with layer thickness and approaches 240 arcsec for the thickest layer. Both thin and thick layers were transparent in the visible and UV spectral range up to the absorption edge at 5.2 eV.

(Invited) Materials Integration, Interlayers, and Interactions for Thermal Management of Wide Bandgap Device Structures

2021 ◽  
Vol MA2021-02 (32) ◽  
pp. 953-953
Author(s):  
Mark S. Goorsky ◽  
Michael Evan Liao ◽  
Kenny Huynh ◽  
Yekan Steven Wang ◽  
Brandon Carson ◽  
...  
Keyword(s):  
Thermal Management ◽  
Wide Bandgap ◽  
Materials Integration ◽  
Device Structures ◽  
Wide Bandgap Device

Nanoscale 3-dimensional characterization of wide bandgap power and microdevices

2019 ◽  
Author(s):  
L.J. Brillson ◽  
H. Gao ◽  
C.H. Lin ◽  
G. Foster ◽  
J. Cox
Keyword(s):  
Wide Bandgap ◽  
3 Dimensional

On the Progress Made in GaN Vertical Device Technology

2019 ◽  
Vol 28 (01n02) ◽  
pp. 1940010
Author(s):  
Dong Ji ◽  
Srabanti Chowdhury
Keyword(s):  
Silicon Carbide ◽  
Power Electronics ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductors ◽  
Wide Range ◽  
Higher Power ◽  
Key Driver ◽  
Bandgap Semiconductors ◽  
Device Technology ◽  
Made In

Silicon technology enabled most of the electronics we witness today, including power electronics. However, wide bandgap semiconductors are capable of addressing high-power electronics more efficiently compared to Silicon, where higher power density is a key driver. Among the wide bandgap semiconductors, silicon carbide (SiC) and gallium nitride (GaN) are in the forefront in power electronics. GaN is promising in its vertical device topology. From CAVETs to MOSFETs, GaN has addressed voltage requirements over a wide range. Our current research in GaN offers a promising view of GaN that forms the theme of this article. CAVETs and OGFETs (a type of MOSFET) in GaN are picked to sketch the key achievements made in GaN vertical device over the last decade.

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