scholarly journals Synchronizing Gas Injections and Time-Resolved Data Acquisition for Perturbation-Enhanced APXPS Experiments

2021 ◽  
Author(s):  
Evgeniy Redekop ◽  
Niclas Johansson ◽  
Esko Kokkonen ◽  
Samuli Urpelainen ◽  
Felipe Lopes da Silva ◽  
...  
Keyword(s):  
Data Acquisition ◽  
Surface Science ◽  
Photoelectron Spectroscopy ◽  
Experimental Approach ◽  
Ambient Pressure ◽  
Atomic Layer ◽  
Time Resolved ◽  
Layer Deposition ◽  
Wafer Substrate ◽  
Properties Of Materials

An experimental approach is described in which well-defined perturbations of the gas feed into an Ambient Pressure X-Ray Photoelectron Spectroscopy (APXPS) cell are fully synchronized with the time-resolved XPS data acquisition. These experiments unlock new possibilities for investigating the properties of materials and chemical reactions mediated by their surfaces, such as those in heterogeneous catalysis, surface science, and coating/deposition applications. Implementation of this approach, which is termed perturbation-enhanced APXPS, at the SPECIES beamline of MAX IV Laboratory is discussed along with several experimental examples including individual pulses of N2 gas over Au foil, a multi-pulse titration of oxygen vacancies in a pre-reduced TiO2 single crystal with O2 gas, and a sequence of alternating precursor pulses for Atomic Layer Deposition (ALD) of TiO2 on a silicon wafer substrate.

scholarly journals Synchronizing Gas Injections and Time-Resolved Data Acquisition for Perturbation-Enhanced APXPS Experiments

2020 ◽  
Author(s):  
Evgeniy Redekop ◽  
Niclas Johansson ◽  
Esko Kokkonen ◽  
Samuli Urpelainen ◽  
Felipe Lopes da Silva ◽  
...  
Keyword(s):  
Data Acquisition ◽  
Surface Science ◽  
Photoelectron Spectroscopy ◽  
Ambient Pressure ◽  
Atomic Layer ◽  
Time Resolved ◽  
Layer Deposition ◽  
Wafer Substrate ◽  
Line Detector ◽  
Properties Of Materials

An experimental approach is described in which well-defined perturbations of the gas feed into an Ambient Pressure X-Ray Photoelectron Spectroscopy (APXPS) cell are digitally synchronized with time-resolved XPS data acquisition with a Delay Line Detector (DLD). These experiments unlock new possibilities for investigating the properties of materials and chemical reactions mediated by their surfaces, such as those in heterogeneous catalysis, surface science, and coating/deposition applications. Implementation of this approach, which is termed perturbation-enhanced APXPS, at the SPECIES beamline of MAX-IV Laboratory is discussed along with several experimental examples including (1) individual pulses of N2 gas over Au foil, a multi-pulse titration of oxygen vacancies in a pre-reduced TiO2 single crystal with O2 gas, and a sequence of alternating precursor pulses for Atomic Layer Deposition (ALD) of TiO2 on a silicon wafer substrate.<br>

scholarly journals Synchronizing Gas Injections and Time-Resolved Data Acquisition for Perturbation-Enhanced APXPS Experiments

2020 ◽  
Author(s):  
Evgeniy Redekop ◽  
Niclas Johansson ◽  
Esko Kokkonen ◽  
Samuli Urpelainen ◽  
Felipe Lopes da Silva ◽  
...  
Keyword(s):  
Data Acquisition ◽  
Surface Science ◽  
Photoelectron Spectroscopy ◽  
Ambient Pressure ◽  
Atomic Layer ◽  
Time Resolved ◽  
Layer Deposition ◽  
Wafer Substrate ◽  
Line Detector ◽  
Properties Of Materials

An experimental approach is described in which well-defined perturbations of the gas feed into an Ambient Pressure X-Ray Photoelectron Spectroscopy (APXPS) cell are digitally synchronized with time-resolved XPS data acquisition with a Delay Line Detector (DLD). These experiments unlock new possibilities for investigating the properties of materials and chemical reactions mediated by their surfaces, such as those in heterogeneous catalysis, surface science, and coating/deposition applications. Implementation of this approach, which is termed perturbation-enhanced APXPS, at the SPECIES beamline of MAX-IV Laboratory is discussed along with several experimental examples including (1) individual pulses of N2 gas over Au foil, a multi-pulse titration of oxygen vacancies in a pre-reduced TiO2 single crystal with O2 gas, and a sequence of alternating precursor pulses for Atomic Layer Deposition (ALD) of TiO2 on a silicon wafer substrate.<br>

scholarly journals Ambient pressure x-ray photoelectron spectroscopy setup for synchrotron-based in situ and operando atomic layer deposition research

2022 ◽  
Vol 93 (1) ◽  
pp. 013905
Author(s):  
E. Kokkonen ◽  
M. Kaipio ◽  
H.-E. Nieminen ◽  
F. Rehman ◽  
V. Miikkulainen ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Ambient Pressure ◽  
Atomic Layer ◽  
X Ray ◽  
Layer Deposition

Near Ambient Pressure X-ray Photoelectron Spectroscopy Study of the Atomic Layer Deposition of TiO2 on RuO2(110)

2015 ◽  
Vol 120 (1) ◽  
pp. 243-251 ◽  
Author(s):  
Ashley R. Head ◽  
Shilpi Chaudhary ◽  
Giorgia Olivieri ◽  
Fabrice Bournel ◽  
Jesper N. Andersen ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Ambient Pressure ◽  
Atomic Layer ◽  
Spectroscopy Study ◽  
X Ray ◽  
Layer Deposition

scholarly journals Structural and Optical Properties of Luminescent Copper(I) Chloride Thin Films Deposited by Sequentially Pulsed Chemical Vapour Deposition

Coatings ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 369 ◽  
Author(s):  
Richard Krumpolec ◽  
Tomáš Homola ◽  
David Cameron ◽  
Josef Humlíček ◽  
Ondřej Caha ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Chemical Vapour Deposition ◽  
Photoelectron Spectroscopy ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Atomic Layer ◽  
Nanocrystalline Films ◽  
Zinc Blende ◽  
Layer Deposition

Sequentially pulsed chemical vapour deposition was used to successfully deposit thin nanocrystalline films of copper(I) chloride using an atomic layer deposition system in order to investigate their application to UV optoelectronics. The films were deposited at 125 °C using [Bis(trimethylsilyl)acetylene](hexafluoroacetylacetonato)copper(I) as a Cu precursor and pyridine hydrochloride as a new Cl precursor. The films were analysed by XRD, X-ray photoelectron spectroscopy (XPS), SEM, photoluminescence, and spectroscopic reflectance. Capping layers of aluminium oxide were deposited in situ by ALD (atomic layer deposition) to avoid environmental degradation. The film adopted a polycrystalline zinc blende-structure. The main contaminants were found to be organic materials from the precursor. Photoluminescence showed the characteristic free and bound exciton emissions from CuCl and the characteristic exciton absorption peaks could also be detected by reflectance measurements.

scholarly journals Study on fabrication method of composite oxide by room temperature atomic layer deposition

Impact ◽  
2020 ◽  
Vol 2020 (5) ◽  
pp. 16-18
Author(s):  
Fumihiko Hirose
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Graduate School ◽  
Room Temperature ◽  
Atomic Layer ◽  
Science And Engineering ◽  
Layer Deposition ◽  
Potential Applications ◽  
Properties Of Materials ◽  
Conducting Research

Thin films can be used to improve the surface properties of materials, enhancing elements such as absorption, abrasion resistance and corrosion resistance, for example. These thin films provide the foundation for a variety of applications in various fields and their applications depend on their morphology and stability, which is influenced by how they are deposited. Thin films can be deposited in different ways. One of these is a technology called atomic layer deposition (ALD). Professor Fumihiko Hirose, a scientist based at the Graduate School of Science and Engineering, Yamagata University, Japan, is conducting research on the room temperature ALD of oxide metals. Along with his team, Professor Hirose has developed a new and improved way of performing ALD to create thin films, and the potential applications are endless.

scholarly journals Nucleation Studies of HfO2 Thin Films Produced by Atomic Layer Deposition

2007 ◽  
Vol 996 ◽  
Author(s):  
Justin C. Hackley ◽  
J. Derek Demaree ◽  
Theodosia Gougousi
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Flow Reactor ◽  
Atomic Layer ◽  
Sample Surface ◽  
Interfacial Region ◽  
Initial Growth ◽  
Layer Deposition ◽  
Similar Growth

AbstractA hot wall Atomic Layer Deposition (ALD) flow reactor equipped with a Quartz Crystal Microbalance (QCM) has been used for the deposition of HfO2 thin films with tetrakis (dimethylamino) hafnium (TDMAH) and H2O as precursors. HfO2 films were deposited on H-terminated Si and SC1 chemical oxide starting surfaces. Spectroscopic ellipsometry (SE) and QCM measurements confirm linear growth of the films at a substrate temperature of 275°C. FTIR spectra indicate the films are amorphous as-deposited. Two distinct growth regimes are observed: from 1-50 cycles, both surfaces display similar growth rates of about 1.0Å/cycle; from 50-200 cycles, HfO2 growth is decreased by about 15% to ~0.87Å/cycle on both surfaces. Nucleation and initial growth behavior of the films on Si-H were examined using X-ray photoelectron spectroscopy (XPS). Angle-resolved XPS, at take-off angles of θ=0, 15, 30, 45 and 60° measured from the normal to the sample surface, is used to probe the interfacial region of thin films (4, 7, 10, 15 and 25 cycles) on H-terminated samples. Initially, an interfacial layer comprised of a SiOx/HfSiOx mixture is grown between 1-10 ALD cycles. We observe that the Si/HfO2 interface is unstable, and oxidation continues up to the 25th ALD cycle, reaching a thickness of ~18Å.

scholarly journals Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Molecules ◽  
2020 ◽  
Vol 25 (21) ◽  
pp. 5043
Author(s):  
Chia-Hsun Hsu ◽  
Xin-Peng Geng ◽  
Wan-Yu Wu ◽  
Ming-Jie Zhao ◽  
Xiao-Ying Zhang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Band Gap ◽  
Photoelectron Spectroscopy ◽  
High Speed ◽  
Oxygen Vacancies ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Zno Films ◽  
X Ray ◽  
Layer Deposition

In this study, aluminum-doped zinc oxide (Al:ZnO) thin films were grown by high-speed atmospheric atomic layer deposition (AALD), and the effects of air annealing on film properties are investigated. The experimental results show that the thermal annealing can significantly reduce the amount of oxygen vacancies defects as evidenced by X-ray photoelectron spectroscopy spectra due to the in-diffusion of oxygen from air to the films. As shown by X-ray diffraction, the annealing repairs the crystalline structure and releases the stress. The absorption coefficient of the films increases with the annealing temperature due to the increased density. The annealing temperature reaching 600 °C leads to relatively significant changes in grain size and band gap. From the results of band gap and Hall-effect measurements, the annealing temperature lower than 600 °C reduces the oxygen vacancies defects acting as shallow donors, while it is suspected that the annealing temperature higher than 600 °C can further remove the oxygen defects introduced mid-gap states.

Development of High-Quality Gate Oxide on 4H-SiC Using Atomic Layer Deposition

2020 ◽  
Vol 1004 ◽  
pp. 547-553
Author(s):  
A.B. Renz ◽  
Oliver J. Vavasour ◽  
Peter M. Gammon ◽  
Fan Li ◽  
Tian Dai ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Elevated Temperatures ◽  
Dielectric Breakdown ◽  
Atomic Layer ◽  
Oxide Semiconductor ◽  
Gas Treatment ◽  
Time Dependent Dielectric Breakdown ◽  
Layer Deposition ◽  
Order Of Magnitude

A systematic post-deposition annealing study on Silicon Carbide (SiC) metal-oxide-semiconductor capacitors (MOSCAPs) using atomic layer deposition (ALD)-deposited silicon dioxide (SiO2) layers was carried out. Anneals were done in oxidising (N2O), inert (Ar) and reducing (H2:N2) ambients at elevated temperatures from 900°C to 1300°C for 1 hour. Electrical characterisation results show that the forming gas treatment at 1100°C reduces the flatband voltage to 0.23 V from 10 V for as-deposited SiO2 layers. The density of interface traps (DIT) was also reduced by one order of magnitude to 2×1011 cm-2 eV-1 at EC-ET = 0.2 eV. As an indicator of the improvement, characterisation by x-ray photoelectron spectroscopy (XPS) showed that silicon enrichment present in as-deposited layers was largely reduced by the forming gas anneal, improving the stoichiometry. Time-dependent dielectric breakdown (TDDB) results showed that the majority of forming gas annealed samples broke down at breakdown fields of 12.5 MV × cm-1, which is about 2.5 MV × cm-1 higher than for thermally oxidised samples.

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