scholarly journals LAYERED IN2SE3 ON SI (111) SURFACE WITH HYSTERESIS OF THE TEMPERATURE DEPENDENCE OF RESISTANCE

2020 ◽  
Author(s):  
Sergei Ponomarev ◽  
Dmitry Rogilo
Keyword(s):  
Experimental Data ◽  
Temperature Dependence ◽  
High Energy ◽  
Temperature Decrease ◽  
Two Dimensional ◽  
Film Resistance ◽  
High Energy Electron ◽  
Rate Reduction ◽  
Abrupt Decrease ◽  
Reverse Transition

In this work, the methods of controlled growth of two-dimensional In2Se3 on a Si (111) substrate were studied by reflection high-energy electron diffraction (RHEED). According to experimental data, the deposition rate reduction increases the size of two-dimensional In2Se3 islands. The temperature dependence of the film resistance was measured by the two-contact technique. At temperature decrease near T = 140 K, an abrupt decrease in resistance by a factor of ~ 1000 was found. The reverse transition occurs near T = 180 K. At T = 20–40 K the second hysteresis occurring without the film resistance jump was found.

Parabolas from Reconstructed Surfaces Observed in Convergent-Beam RHEED Patterns

1990 ◽  
Vol 48 (2) ◽  
pp. 398-399
Author(s):  
M. Gajdardziska-Josifovska
Keyword(s):  
Electron Microscopy ◽  
High Energy ◽  
Two Dimensional ◽  
High Energy Electron ◽  
Reflection And Transmission ◽  
Experimental Diffraction Pattern ◽  
Surface Resonance ◽  
Reconstructed Surfaces ◽  
Reflection Electron Microscopy ◽  
Convergent Beam

Parabolas have been observed in the reflection high-energy electron diffraction (RHEED) patterns from surfaces of single crystals since the early thirties. In the last decade there has been a revival of attempts to elucidate the origin of these surface parabolas. The renewed interest stems from the need to understand the connection between the parabolas and the surface resonance (channeling) condition, the latter being routinely used to obtain higher intensity in reflection electron microscopy (REM) images of surfaces. Several rather diverging descriptions have been proposed to explain the parabolas in the reflection and transmission Kikuchi patterns. Recently we have developed an unifying general treatment in which the parabolas are shown to be K-lines of two-dimensional lattices. Here we want to review the main features of this description and present an experimental diffraction pattern from a 30° MgO (111) surface which displays parabolas that can be attributed to the surface reconstruction.

Algorithms for determining the phase of RHEED oscillations

2015 ◽  
Vol 48 (6) ◽  
pp. 1927-1934 ◽  
Author(s):  
Zbigniew Mitura ◽  
Sergei L. Dudarev
Keyword(s):  
Experimental Data ◽  
Direct Method ◽  
Incident Beam ◽  
Diffraction Theory ◽  
High Energy ◽  
Angle Of Incidence ◽  
High Energy Electron ◽  
Dynamical Diffraction ◽  
Glancing Angle ◽  
Low Symmetry

Oscillations of reflection high-energy electron diffraction (RHEED) intensities are computed using dynamical diffraction theory. The phase of the oscillations is determined using two different approaches. In the first, direct, approach, the phase is determined by identifying the time needed to reach the second oscillation minimum. In the second approach, the phase is found using harmonic analysis. The two approaches are tested by applying them to oscillations simulated using dynamical diffraction theory. The phase of RHEED oscillations observed experimentally is also analysed. Experimental data on the variation of the phase as a function of the glancing angle of incidence, derived using the direct method, are compared with the values computed using both the direct and harmonic methods. For incident-beam azimuths corresponding to low-symmetry directions, both approaches produce similar results.

A RHEED Study of MBE Growth of ZnSe on GaAs (111) A-(2 × 2)

2003 ◽  
Vol 10 (04) ◽  
pp. 669-675
Author(s):  
F. S. Gard ◽  
J. D. Riley ◽  
R. Leckey ◽  
B. F. Usher
Keyword(s):  
Growth Rate ◽  
Electron Diffraction ◽  
Substrate Temperature ◽  
Three Dimensional ◽  
High Energy ◽  
Growth Mode ◽  
Two Dimensional ◽  
High Energy Electron ◽  
Mbe Growth ◽  
Atomic Flux

ZnSe epilayers have been grown under various Se/Zn atomic flux ratios in the range of 0.22–2.45 at a substrate temperature of 350°C on Zn pre-exposed GaAs (111) A surfaces. Real time reflection high energy electron diffraction (RHEED) observations have shown a transition from a two-dimensional (2D) to a three-dimensional (3D) growth mode. The transition time depends directly upon the growth rate. A detailed discussion is presented to explore the cause of this change in the growth mode.

Computer studies on reflection high-energy electron diffraction from the growing surface of Ge(001)

2013 ◽  
Vol 46 (4) ◽  
pp. 1024-1030 ◽  
Author(s):  
Zbigniew Mitura
Keyword(s):  
Experimental Data ◽  
Electron Diffraction ◽  
High Energy ◽  
Bloch Wave ◽  
Energy Electron ◽  
High Energy Electron ◽  
Homoepitaxial Growth ◽  
Scattering Potential ◽  
Computer Studies ◽  
Quantitative Explanation

The results of calculations of reflection high-energy electron diffraction intensities, measured at different stages of the homoepitaxial growth of Ge(001), are described. A two-dimensional Bloch wave approach was used in calculations of the Schrödinger equation with a one-dimensional potential. The proportional model was used for partially filled layers,i.e.the scattering potential was taken to be proportional to the coverage and the potential of the fully filled layer. Using such an approach, it was shown that it is possible to obtain valuable information for the analysis of experimental data. The results of these calculations were compared with data for off-symmetry azimuths from the literature, and satisfactory agreement between the theoretical and experimental data was found. Also assessed was whether developing more advanced models (i.e.going beyond the proportional model), to make a more detailed account of the diffuse scattering, might be important in achieving a fully quantitative explanation of the experimental data.

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