scholarly journals Zero Temperature Coefficient behavior for Ellipsoidal MOSFET

2020 ◽  
Vol 15 (2) ◽  
pp. 1-5
Author(s):  
Luciano Mendes Camillo ◽  
Marcos Paulo Braga de Lima ◽  
Marco Aurélio Pinhel Peixoto ◽  
Marcello Marcelino Correa ◽  
Salvador Pinillos Gimenez
Keyword(s):  
Numerical Simulations ◽  
Temperature Coefficient ◽  
Threshold Voltage ◽  
Three Dimensional ◽  
Oxide Semiconductor ◽  
Zero Temperature ◽  
Degradation Factor ◽  
Mobility Degradation ◽  
Factor C ◽  
Bias Condition

The zero temperature coefficient (ZTC) is investigated by three-dimensional numerical simulations in the Metal-Oxide-Semiconductor (MOS) Field Effect Transistor (MOSFET) with the ellipsoidal (EM) and conventional rectangular gate geometries (CM), considering the same channel widths (W), gate areas (Ag) and bias condition (BC).   In this work an improved simple model which predicts the ZTC point taking into account only the mobility degradation factor (c) and threshold voltage (Vth) parameters as function of temperature is proposed in the linear and saturation operation regions. The analysis takes into account the temperature variations of the threshold voltage and the mobility degradation factor. Although simple, the model predictions present a good agreement with the numerical simulations results.

scholarly journals Low Temperature Sensitivity CMOS Transconductor Based on GZTC MOSFET Condition

2016 ◽  
Vol 11 (1) ◽  
pp. 27-37
Author(s):  
Pedro Toledo ◽  
Hamilton Klimach ◽  
David Cordova ◽  
Sergio Bampi ◽  
Eric Fabris
Keyword(s):  
Analog Circuits ◽  
Thermal Sensitivity ◽  
Temperature Stability ◽  
Complementary Metal Oxide Semiconductor ◽  
Building Blocks ◽  
Oxide Semiconductor ◽  
Zero Temperature ◽  
Strong Inversion ◽  
Commercial Process ◽  
Bias Condition

Complementary Metal Oxide Semiconductor (CMOS) Transconductors, or Gm cells, are key building blocks to implement a large variety of analog circuits such as adjustable filters, multipliers, controlled oscillators and amplifiers. Usually temperature stability is a must in such applications, and herein we define all required conditions to design low thermal sensitivity Gm cells by biasing MOSFETs at Transconductance Zero Temperature Condition (GZTC). This special bias condition is analyzed using a MOSFET model which is continuous from weak to strong inversion, and it is proved that this condition always occurs from moderate to strong inversion operation in any CMOS fabrication process. Additionally, a few example circuits are designed using this technique: a single-ended resistor emulator, an impedance inverter, a first order and a second order filter. These circuits have been simulated in a 130 nm CMOS commercial process, resulting in improved thermal stability in the main performance parameters, in the range from 27 to 53 ppm/oC.

Behavior of Particles Suspended in Non-Coalescence Droplets Formed Between Coaxial Rods With Temperature Difference

2007 ◽  
Author(s):  
Ichiro Ueno ◽  
Akira Miyauchi
Keyword(s):  
Surface Tension ◽  
Free Surface ◽  
Temperature Gradient ◽  
Temperature Coefficient ◽  
Temperature Difference ◽  
Particle Tracking ◽  
Particle Tracking Velocimetry ◽  
Three Dimensional ◽  
Zero Temperature ◽  
Spatio Temporal

One can realize that head-to-head droplets never coalesce if there exists a temperature gradient over the free surface under the condition of the non-zero temperature coefficient of the surface tension. The present authors focus upon unique behavior of the particles suspended in droplets formed between the coaxial cylindrical rods with a temperature difference. Several kinds of patterns emerged in the hotter droplet will be introduced. Spatio-temporal particle behaviors are reconstructed by applying three dimensional particle tracking velocimetry (3-D PTV).

Sign in / Sign up

Export Citation Format

Share Document