scholarly journals Temperature and Silicon Film Thickness Influence on the Operation of Lateral SOI PIN Photodiodes for Detection of Short Wavelengths

2011 ◽  
Vol 6 (2) ◽  
pp. 107-113
Author(s):  
Michelly De Souza ◽  
Olivier Bulteel ◽  
Denis Flandre ◽  
Marcelo Antonio Pavanello
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Numerical Simulations ◽  
Silicon Film ◽  
Ultra Violet ◽  
Experimental Measurements ◽  
Two Dimensional ◽  
Temperature Influence ◽  
Pin Photodiodes ◽  
Physical Phenomena

This work presents an analysis of the temperature influence on the performance of a lateral thin-film SOI PIN photodiodes when illuminated by low wavelengths, in the range of blue and ultra-violet (UV). Experimental measurements performed from 100K to 400K showed that the optical responsitivity of SOI PIN photodetectors is affected by temperature change, being reduced at low and moderately high temperatures. Two-dimensional numerical simulations showed the same trends as in the experimental results, and were used both to investigate the physical phenomena responsible for the observed behavior as a function of the temperature as well as to predict the influence of silicon film thickness downscaling on the photodetector performance.

scholarly journals Temperature, Silicon Thickness and Intrinsic Length Influence on the Operation of Lateral SOI PIN Photodiodes

2020 ◽  
Vol 15 (2) ◽  
pp. 1-5
Author(s):  
Edson José Rodrigues ◽  
Michelly De Souza
Keyword(s):  
Thin Film ◽  
Numerical Simulations ◽  
Silicon Film ◽  
Experimental Measurements ◽  
Two Dimensional ◽  
Incident Wavelength ◽  
Intrinsic Length ◽  
Silicon Thickness ◽  
Pin Photodiodes ◽  
Uv Range

This work presents an analysis of the influence of the intrinsic length region (Li) and the thickness of the silicon film (tSi) on the performance of lateral thin-film SOI PIN photodiodes when illuminated by low wavelengths, in the blue and ultraviolet (UV) range. The experimental measurements performed with the wavelengths of 396 nm, 413 nm, and 460 nm in a temperature range of 100 K to 400 K showed that the optical responsivity of the SOI PIN photodetectors has larger dependence on the incident wavelength than on temperatures variation. Two-dimensional numerical simulations showed the same trends as the experimental results as a function of temperature and as a function of wavelength. Numerical simulations were used to investigate the responsivity and total quantum efficiency of PIN SOI photodetectors with intrinsic length region ranging from 5 µm to 30 µm and silicon film thickness ranging between 40 nm to 500 nm. From the results can be concluded that by properly choosing Li and tSi it is possible to optimize PIN SOI photodiodes performance for detecting specific wavelengths.

Influence of ion beam parameters onto two-dimensional optical thin film thickness distributions deposited by ion beam sputtering

2019 ◽  
Vol 682 ◽  
pp. 109-120 ◽  
Author(s):  
Wjatscheslaw Sakiew ◽  
Stefan Schrameyer ◽  
Marco Jupé ◽  
Philippe Schwerdtner ◽  
Nick Erhart ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Ion Beam ◽  
Two Dimensional ◽  
Ion Beam Sputtering ◽  
Thin Film Thickness ◽  
Optical Thin Film ◽  
Beam Sputtering ◽  
Beam Parameters

Optical Interferometric Observations of the Effects of a Bump on Point Contact EHL

1992 ◽  
Vol 114 (4) ◽  
pp. 779-784 ◽  
Author(s):  
M. Kaneta ◽  
T. Sakai ◽  
H. Nishikawa
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Numerical Simulations ◽  
Contact Region ◽  
Thickness Distribution ◽  
Point Contact ◽  
Elastohydrodynamic Lubrication ◽  
Interesting Phenomenon ◽  
Contact Conditions ◽  
Average Speed

The effects of surface kinematic conditions on micro-elastohydrodynamic lubrication (micro-EHL) are investigated under rolling and/or sliding point contact conditions using the optical interferometry technique. A long bump of chromium sputtered on the surface of a highly polished ball is used as a model asperity. It is shown that the film thickness distribution or the elastic deformation of the bump is influenced significantly by the surface kinematic conditions and the orientation of the bump. An interesting phenomenon is also found when contacting surfaces move with different speeds; the thin film formed on a transversely oriented bump existing at the entrance of the contact travels through the contact region at the average speed of the surfaces. The experimental results obtained qualitatively confirm published numerical simulations.

An Investigation of a-Si:H Thin Film Transistors by A Comparison of Transient Measurements and Numerical Simulations.

1992 ◽  
Vol 258 ◽  
Author(s):  
M.F. Willums ◽  
M. Hack ◽  
P.G. Lecomber ◽  
J. Shaw
Keyword(s):  
Thin Film ◽  
Dynamic Response ◽  
Numerical Simulations ◽  
Amorphous Silicon ◽  
Transient Response ◽  
Thin Film Transistors ◽  
Silicon Layer ◽  
Drain Current ◽  
Two Dimensional ◽  
Transient Measurements

ABSTRACTTransient measurements of the source-drain current ISD of amorphous silicon (a-Si:H) thin film transistors are compared with the results of two dimensional simulations. In particular, we have investigated the effect of different amorphous silicon layer thicknesses on the transient response. It is found that the dynamic response of a transistor with 0.4 μm a-Si:H is significantly slower than that of a device with only 0.06 μm of a-Si:H.

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