Ionic glasses as an efficient gating strategy to tune the carrier density in narrow bandgap nanocrystal arrays

2020 ◽  
Author(s):  
Charlie Gréboval ◽  
Ulrich Noumbé ◽  
Jean-François Dayen ◽  
Emmanuel Lhuillier
Keyword(s):  
Carrier Density ◽  
Narrow Bandgap ◽  
Ionic Glasses

Transport and fluctuations in nonlinear-dissipative systems: role of interparticle collisions

1999 ◽  
Vol 4 ◽  
pp. 31-86 ◽  
Author(s):  
R. Katilius ◽  
A. Matulionis ◽  
R. Raguotis ◽  
I. Matulionienė
Keyword(s):  
Electric Fields ◽  
Carrier Density ◽  
Experimental Results ◽  
Dissipative Systems ◽  
Doped Semiconductors ◽  
Electron Diffusion ◽  
Electron Collisions ◽  
Electric Noise ◽  
Diffusion Phenomena

The goal of the paper is to overview contemporary theoretical and experimental research of the microwave electric noise and fluctuations of hot carriers in semiconductors, revealing sensitivity of the noise spectra to non-linearity in the applied electric field strength and, especially, in the carrier density. During the last years, investigation of electronic noise and electron diffusion phenomena in doped semiconductors was in a rapid progress. By combining analytic and Monte Carlo methods as well as the available experimental results on noise, it became possible to obtain the electron diffusion coefficients in the range of electric fields where inter-electron collisions are important and Price’s relation is not necessarily valid. Correspondingly, a special attention to the role of inter-electron collisions and of the non-linearity in the carrier density while shaping electric noise and diffusion phenomena in the non-equilibrium states will be paid. The basic and up-to-date information will be presented on methods and advances in this contemporary field - the field in which methods of non-linear analytic and computational analysis are indispensable while seeking coherent understanding and interpretation of experimental results.

2D carrier Density Mapping Using SNDM-dC/dV and dC/dz of SiC Power MOSFET

2019 ◽  
Author(s):  
Jing-jiang Yu ◽  
T. Yamaoka ◽  
T. Aiso ◽  
K. Watanabe ◽  
Y. Shikakura ◽  
...  
Keyword(s):  
Carrier Density ◽  
Environmental Control ◽  
Boundary Region ◽  
Power Mosfet ◽  
Dopant Profiling ◽  
Density Mapping ◽  
Resolution Observation ◽  
Develop Software ◽  
20 Nm ◽  
High Resolution Observation

Abstract Scanning nonlinear dielectric microscopy is continuously developed as an AFM-derived method for 2D dopant profiling of semiconductor devices. In this paper, the authors apply 2D carrier density mapping to Si and SiC and succeed a high resolution observation of the SiC planar power MOSFET. Furthermore, they develop software that combines dC/dV and dC/dz images and expresses both density and polarity in a single distribution image. The discussion provides the details of AFM experiments that were conducted using a Hitachi environmental control AFM5300E system. The results indicated that the carrier density decreases in the boundary region between n plus source and p body. The authors conclude that although the resolutions of dC/dV and dC/dz are estimated to be 20 nm or less and 30 nm or less, respectively, there is a possibility that the resolution can be further improved by using a sharpened probe.

Thermal Frequency Imaging: A New Application of Laser Voltage Imaging Applied on 40nm Technology

2011 ◽  
Author(s):  
Guillaume Celi ◽  
Sylvain Dudit ◽  
Thierry Parrassin ◽  
Philippe Perdu ◽  
Antoine Reverdy ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Laser Beam ◽  
Integrated Circuit ◽  
Carrier Density ◽  
Deep Submicron ◽  
Charge Carrier Density ◽  
Voltage Imaging ◽  
A New Technique ◽  
Scan Chain

Abstract For Very Deep submicron Technologies, techniques based on the analysis of reflected laser beam properties are widely used. The Laser Voltage Imaging (LVI) technique, introduced in 2009, allows mapping frequencies through the backside of integrated circuit. In this paper, we propose a new technique based on the LVI technique to debug a scan chain related issue. We describe the method to use LVI, usually dedicated to frequency mapping of digital active parts, in a way that enables localization of resistive leakage. Origin of this signal is investigated on a 40nm case study. This signal can be properly understood when two different effects, charge carrier density variations (LVI) and thermo reflectance effect (Thermal Frequency Imaging, TFI), are taken into account.

Cyclotron Resonance in Extremely Low Carrier-Density System of Yb4As3

1997 ◽  
Vol 66 (12) ◽  
pp. 3729-3732 ◽  
Author(s):  
Hiroshi Matsui ◽  
Akira Ochiai ◽  
Hisatomo Harima ◽  
Hidekazu Aoki ◽  
Takashi Suzuki ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Carrier Density

Narrow‐Bandgap Single‐Component Polymer Solar Cells with Approaching 9% Efficiency

2021 ◽  
pp. 2101295
Author(s):  
Siying Li ◽  
Xin Yuan ◽  
Qilin Zhang ◽  
Bin Li ◽  
Yuxiang Li ◽  
...  
Keyword(s):  
Solar Cells ◽  
Polymer Solar Cells ◽  
Single Component ◽  
Narrow Bandgap

scholarly journals High performance tandem organic solar cells via a strongly infrared-absorbing narrow bandgap acceptor

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Zhenrong Jia ◽  
Shucheng Qin ◽  
Lei Meng ◽  
Qing Ma ◽  
Indunil Angunawela ◽  
...  
Keyword(s):  
Solar Cells ◽  
Power Conversion Efficiency ◽  
Conversion Efficiency ◽  
Organic Solar Cells ◽  
High Performance ◽  
Short Circuit ◽  
Power Conversion ◽  
High Power Conversion Efficiency ◽  
Device Structure ◽  
Narrow Bandgap

AbstractTandem organic solar cells are based on the device structure monolithically connecting two solar cells to broaden overall absorption spectrum and utilize the photon energy more efficiently. Herein, we demonstrate a simple strategy of inserting a double bond between the central core and end groups of the small molecule acceptor Y6 to extend its conjugation length and absorption range. As a result, a new narrow bandgap acceptor BTPV-4F was synthesized with an optical bandgap of 1.21 eV. The single-junction devices based on BTPV-4F as acceptor achieved a power conversion efficiency of over 13.4% with a high short-circuit current density of 28.9 mA cm−2. With adopting BTPV-4F as the rear cell acceptor material, the resulting tandem devices reached a high power conversion efficiency of over 16.4% with good photostability. The results indicate that BTPV-4F is an efficient infrared-absorbing narrow bandgap acceptor and has great potential to be applied into tandem organic solar cells.

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