scholarly journals MODIFIKASI MESIN TRIM FORM PADA PROSES PENGEMASAN INTEGRATED CIRCUIT UNTUK PENURUNAN DAMAGED LEAD

2020 ◽  
Vol 12 (1) ◽  
pp. 36-40
Author(s):  
Nur Sakinah Asaad ◽  
Purwanto Purwanto
Keyword(s):  
Integrated Circuit ◽  
Lead Frame ◽  
Low Profile ◽  
Quad Flat Package ◽  
Pick And Place

Proses pengemasan Integrated Circuit (IC) pada kemasan Low Profile Quad Flat Package (LQFP) membutuhkan mesin trim form untuk pemotongan dambar dan pembentukan kaki IC sebelum dipisahkan dari lead frame. Salah satu urutan proses pada mesin trim form adalah offload yaitu penempatan IC ke dalam tray dengan modul pick and place termasuk didalamnya turn table dengan pergerakan buka tutup untuk menyesuaikan jarak antar kolom dari leadframe sebelum dipindahkan ke tray. Pergerakan buka tutup dari turn table ini berpengaruh terhadap cacat produksi damaged lead. Modifikasi ditujukan untuk deteksi dini misalignment sehingga mesin dapat berhenti otomatis dan mengurangi cacat produksi melalui penambahan dua sensor proximity pada turn table. Hasil penelitian menunjukkan penurunan error pada turn table sebesar 88% dan assembly yield mencapai 99.985% atau terjadi peningkatan sebesar 0.07%.

Simulations of Process-Induced Warpage During IC Encapsulation Process

2006 ◽  
Vol 129 (3) ◽  
pp. 307-315 ◽  
Author(s):  
Shiang-Yu Teng ◽  
Sheng-Jye Hwang
Keyword(s):  
Thermal Expansion ◽  
Integrated Circuit ◽  
Opposite Sign ◽  
Simulation Models ◽  
Experimental Results ◽  
New Approach ◽  
Low Profile ◽  
Quad Flat Package ◽  
Encapsulation Process

Warpage during integrated circuit encapsulation process is a serious problem. Previous researchers had focused on warpage analysis with thermal-induced shrinkage and the cure-induced shrinkage was neglected. A new approach considering both cure- and thermal-induced shrinkage during encapsulation process was presented to predict the amount of warpage. The cure-induced shrinkage was described by the pressure-volume-temperature-cure (P-V-T-C) equation of epoxy. The thermal-induced shrinkage was described by the coefficients of thermal expansion of the component materials. The thin small outline package (TSOP) DBS-27P and low-profile quad flat package (LQFP) LQFP-64, which were manufactured by Philips Semiconductor located in Taiwan and Siliconware Precision Industries Corporation, respectively, were chosen to be the simulation models. By comparing the amount of predicted warpage with the experimental results, it showed that the approach could better predict the amount of warpage than that considering only thermal-induced shrinkage. It was also found that the sign of cure-induced warpage could be opposite to the thermal-induced warpage. Appropriate design of a package to make cure- and thermal-induced shrinkage to be of opposite sign could minimize the warpage of a package.

Enhancement of ESD performances of Silicon Capacitors for RFID solutions

2020 ◽  
Vol 2020 (1) ◽  
pp. 000085-000089
Author(s):  
Sébastien Jacqueline ◽  
Catherine Bunel ◽  
Laurent Lengignon
Keyword(s):  
Cross Sections ◽  
Radio Frequency Identification ◽  
Integrated Circuit ◽  
Equivalent Series Resistance ◽  
Human Body Model ◽  
Capacitance Density ◽  
Electrical Failure ◽  
Low Profile ◽  
Lc Circuit ◽  
Process Architecture

Abstract Radio-Frequency IDentification devices such as smart cards and RFID tags are based on the presence of a resonant tuned LC circuit associated to the RFID Integrated Circuit (IC). The use of discrete capacitor, external to the IC gives greater flexibility and design freedom. In the race of miniaturization, manufacturers of RFID devices always require smaller electronic components. To save space and in the same time improve performances, capacitors are exposed to height and volume constraints. In the same time, the capacitor has to withstand ESD stresses that can occur during the assembly of the device and during operation. Murata has developed a unique thin capacitor technology in silicon. This paper reports the development of a range of low profile capacitors with enhanced ESD performances. The manufacturing process optimization and the design adjustments will be presented here. The process was optimized by taking into account the main electrical parameters: leakage current, breakdown voltage, capacitance density, capacitance accuracy, Equivalent Series Resistance (ESR) and Self-Resonant Frequency (SRF). The dielectric stack was defined in order to integrate up to 330pF in 0402 case. The process architecture, based on accurate planar capacitor with thick dielectric will be discussed. With this architecture there is no constraint to reach low thickness, such as 100μm or even lower. The ESD threshold of each Silicon Capacitor was investigated with design variations associated to Human Body Model measurements. A Single Project Wafer (SPW) was founded with 36 different capacitor designs. Design modulations specifically addressed the orientation and position of the contacts openings. Special care was taken to maximize the width of the contact holes and metal tracks. A mosaic approach, constructed out of a massive network of parallelized elementary cells was also implemented, so that the charges of the ESD pulse do not concentrate at the same place, leading to electrical failure. Examples of defects due to ESD stress will be shown with failure analysis cross-sections and ways to enhance the ESD threshold by design will be illustrated.

“Cleaning”- The Dirty Word in Packaging Assembly

2010 ◽  
Vol 2010 (1) ◽  
pp. 000742-000746
Author(s):  
Rich Brooks
Keyword(s):  
Thermal Energy ◽  
Integrated Circuit ◽  
Flip Chip ◽  
New Technologies ◽  
Cleaning Process ◽  
Maximum Performance ◽  
Low Profile ◽  
Total Process ◽  
Temperature And Pressure

A majority of the package assembly facilities are using only DI water to remove flux residue from under flip-chip devices, prior to an underfill process. As the new technologies are being implemented, not only has DI water reached its limitations, but some cleaning chemistries are not able to perform adequately to remove ALL of the flux residues. Complete cleaning and removal of the flux residues under low profile components are critical to maintain the reliability of the integrated circuit. Therefore, the cleaning process must be carefully examined and optimized to obtain maximum performance for removing the flux residues. The total cleaning process can be broken down into two subsets:Static Cleaning rate & Dynamic Cleaning rate The Static Cleaning rate is ability of the cleaning chemistry to remove or dissolve the residue in the absence of temperature and pressure. The Dynamic Cleaning rate involves the kinetic forces and energy to remove the residue. This includes the Thermal energy and Impingement energy required to remove the flux residue. The sum of these two cleaning rates (Static and Dynamic cleaning rates) equal the Total Process Cleaning rate (see formula below). This paper will review cleaning problems brought about with the implementation of the latest technologies and explain how the cleaning process can be optimized to guarantee the reliability of the assemblies.

Simulation Analysis of Springback for Lead Frame Copper Alloy

2012 ◽  
Vol 560-561 ◽  
pp. 1048-1051 ◽  
Author(s):  
Juan Hua Su ◽  
Feng Zhang Ren ◽  
Ze Yang
Keyword(s):  
Integrated Circuit ◽  
Copper Alloy ◽  
High Performance ◽  
Simulation Analysis ◽  
Copper Alloys ◽  
Lead Frame ◽  
Bending Performance ◽  
Curvature Variation ◽  
Modeling Software ◽  
Bending Radius

The bending performance of lead frame materials is a very important in improving the quality of lead frame alloys and meeting the needs of high performance integrated circuit. The sringback amount of curvature variation of CuFeP , CuCrZrMg , CuNiSi and CuCrSnZn alloy are researched by numerical simulation. Bending model is built by 3D modeling software, and the necessary post-processing is carried out. The bending springback amount △K of the four kinds of copper alloy materials are calculated out. The results show that the sringback amount of curvature variation of four copper alloys at the same condition from large to small in turn is CuCrZrMg, CuNiSi, CuFeP, CuCrSnZn. Smaller the minimum relatively bending radius of copper alloy used in lead frame, less the springback amount and better the forming performance.

In Situ Chip Stress Extractions for LFBGA Packages Through Piezoresistive Sensors

2009 ◽  
Vol 131 (3) ◽  
Author(s):  
Ben-Je Lwo ◽  
Jeng-Shian Su ◽  
Hsien Chung
Keyword(s):  
Stress Measurements ◽  
Piezoresistive Sensors ◽  
Stress Sensors ◽  
Compressive Stresses ◽  
Fine Pitch ◽  
Low Profile ◽  
Quad Flat Package ◽  
On Chip ◽  
Test Chips

Piezoresistive sensors have been demonstrated to be an accurate and efficient tool for stress measurements on chip surfaces inside microelectronic packaging. In this work, test chips with piezoresistive stress sensors, diode temperature sensors as well as heaters were first designed, fabricated, and calibrated. We next packaged the test chips into low profile, fine pitch ball grid array (LFBGA) packaging with 196 balls and measured the stresses on chip surfaces inside the packaging. After measuring the packaging induced stress as well as the stress under stable environmental temperature rises, it was found that compressive stresses were obtained at room temperature, and the stresses were relaxed as temperature went up at a rate between 0.45 MPa/°C and 0.60 MPa/°C. For thermo-stress experiments, the temperatures on chip surfaces at different power levels were measured, and compressive chip stresses were first extracted. As the chip power increased, the compressive stresses became tensions. Since the LFBGA structure is thinner with higher packaging efficiency, different results from our earlier plastic quad flat package stress measurements were observed and discussed. In addition, the final comparisons between the experimental data and the finite element simulations show good consistency.

Size Detection System for Integrated Circuit Lead Frame Using Machine Vision

2018 ◽  
Author(s):  
Lu Chen ◽  
Yuying Guo ◽  
Hongyu Chu ◽  
Yanhua Shao ◽  
Zhiyuan Chang ◽  
...  
Keyword(s):  
Machine Vision ◽  
Integrated Circuit ◽  
Detection System ◽  
Lead Frame

Sequential Reflow-Process Optimization to Reduce Die-Attach Solder Voids

2015 ◽  
Vol 137 (2) ◽  
Author(s):  
Youmin Yu ◽  
Victor Chiriac ◽  
Yingwei Jiang ◽  
Zhijie Wang
Keyword(s):  
Heat Transfer ◽  
Theoretical Prediction ◽  
Integrated Circuit ◽  
Sequential Optimization ◽  
Solder Paste ◽  
Lead Frame ◽  
Reflow Process ◽  
Sequential Method ◽  
Die Attach ◽  
Solder Reflow

Solder voids are detrimental to the thermal, mechanical, and reliability performance of integrated circuit (IC) packages and must be controlled within certain specifications. A sequential method of optimizing solder-reflow process to reduce die-attach solder voids in power quad flat no-lead (QFN) packages is presented. The sequential optimization consists, in turn, of theoretical prediction, heat transfer comparison, and experimental validation. First, the theoretical prediction uses calculations to find the optimal pause location and time for a lead frame strip (with dies bonded to it by solder paste) to receive uniform heat transfer during the solder-reflow stage. Next, reflow profiles at different locations on the lead frame strip are measured. Heat transfer during the reflow stage at these locations is calculated from the measured reflow profiles and is compared to each other to confirm the theoretical prediction. Finally, only a minimal number of actual trials are conducted to verify the predicted and confirmed optimal process. Since the theoretical prediction and heat transfer comparison screens out most of the unnecessary trials which must be conducted in common design of experiment (DoE) and trial-and-error methods, the sequential optimization method saves significant time and cost.

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