scholarly journals Electron scattering anisotropy in silicon

2021 ◽  
Vol 25 (1) ◽  
Author(s):  
G. P. Gaidar ◽  
P. I. Baranskii
Keyword(s):  
Electron Scattering ◽  
Scattering Anisotropy

The Effect of Alloying on the Fermi Surface of Copper. II. Electron-scattering and Neck Cross Sections with Dilute Heterovalent and Transition Metal Solutes

1971 ◽  
Vol 49 (19) ◽  
pp. 2449-2461 ◽  
Author(s):  
P. T. Coleridge ◽  
I. M. Templeton
Keyword(s):  
Transition Metal ◽  
Fermi Surface ◽  
Electron Scattering ◽  
Cross Sections ◽  
Kondo Effect ◽  
Metal Alloys ◽  
Neck Size ◽  
Transition Metal Alloys ◽  
Scattering Anisotropy ◽  
Scattering Cross Sections

The Fermi surface neck size and the scattering cross sections for the neck and [Formula: see text] belly orbits have been measured in dilute alloys of Zn, Al, Ge, Si, Ni, Co, Fe, Mn, and Cr in Cu. Earlier observations of rigid-band behavior for the neck size in Cu(Zn) and Cu(Al), while essentially substantiated by the present measurements, are now believed to be fortuitous; Cu(Ge) and Cu(Si) do not agree with a rigid-band prediction. The changes (generally reductions) of neck size in the transition metal alloys do not appear to be related directly to changes of electron concentration. The scattering anisotropy is rather small in the heterovalent alloys, the scattering being somewhat greater on the necks, but is large and in the opposite sense in the transition metal alloys. The magnitude and anisotropy of scattering is interpreted in terms of phase shifts associated with the impurities and the wave functions over the Fermi surface. There is evidence for additional scattering anisotropy in alloys exhibiting the Kondo effect.

Study of charge transfer in FeTi

1983 ◽  
Vol 41 ◽  
pp. 296-297
Author(s):  
J. Taft∅
Keyword(s):  
Charge Transfer ◽  
Charge Distribution ◽  
Electron Scattering ◽  
Periodic System ◽  
Electron Distribution ◽  
Scattering Amplitude ◽  
Transition Elements ◽  
Hartree Fock ◽  
Cscl Structure ◽  
The Right

It is well known that for reflections corresponding to large interplanar spacings (i.e., sin θ/λ small), the electron scattering amplitude, f, is sensitive to the ionicity and to the charge distribution around the atoms. We have used this in order to obtain information about the charge distribution in FeTi, which is a candidate for storage of hydrogen. Our goal is to study the changes in electron distribution in the presence of hydrogen, and also the ionicity of hydrogen in metals, but so far our study has been limited to pure FeTi. FeTi has the CsCl structure and thus Fe and Ti scatter with a phase difference of π into the 100-ref lections. Because Fe (Z = 26) is higher in the periodic system than Ti (Z = 22), an immediate “guess” would be that Fe has a larger scattering amplitude than Ti. However, relativistic Hartree-Fock calculations show that the opposite is the case for the 100-reflection. An explanation for this may be sought in the stronger localization of the d-electrons of the first row transition elements when moving to the right in the periodic table. The tabulated difference between fTi (100) and ffe (100) is small, however, and based on the values of the scattering amplitude for isolated atoms, the kinematical intensity of the 100-reflection is only 5.10-4 of the intensity of the 200-reflection.

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

Artefact in 20Å-Resolution Electron Images of Negatively Stained Twodimensional Membrane Protein Crystals

1982 ◽  
Vol 40 ◽  
pp. 92-93
Author(s):  
Douglas L. Dorset ◽  
Barbara Moss
Keyword(s):  
Electron Scattering ◽  
Cross Correlation ◽  
Transmission Function ◽  
Group Symmetry ◽  
Asymmetric Structure ◽  
Object Model ◽  
Phase Object ◽  
Computing Systems ◽  
Resolution Electron ◽  
Plane Group

A number of computing systems devoted to the averaging of electron images of two-dimensional macromolecular crystalline arrays have facilitated the visualization of negatively-stained biological structures. Either by simulation of optical filtering techniques or, in more refined treatments, by cross-correlation averaging, an idealized representation of the repeating asymmetric structure unit is constructed, eliminating image distortions due to radiation damage, stain irregularities and, in the latter approach, imperfections and distortions in the unit cell repeat. In these analyses it is generally assumed that the electron scattering from the thin negativelystained object is well-approximated by a phase object model. Even when absorption effects are considered (i.e. “amplitude contrast“), the expansion of the transmission function, q(x,y)=exp (iσɸ (x,y)), does not exceed the first (kinematical) term. Furthermore, in reconstruction of electron images, kinematical phases are applied to diffraction amplitudes and obey the constraints of the plane group symmetry.

Chemical modification of the bacterial wall to determine sites of metal deposition

1978 ◽  
Vol 36 (2) ◽  
pp. 350-351
Author(s):  
T. J. Beveridge
Keyword(s):  
Electron Scattering ◽  
Metal Salt ◽  
Metal Deposition ◽  
Suitable Model ◽  
X Ray Diffraction ◽  
Subtilis Cell ◽  
Thin Sections ◽  
X Ray ◽  
Section Data ◽  
Metal Impregnation

The Bacillus subtilis cell wall provides a protective sacculus about the vital constituents of the bacterium and consists of a collection of anionic hetero- and homopolymers which are mainly polysaccharidic. We recently demonstrated that unfixed walls were able to trap and retain substantial amounts of metal when suspended in aqueous metal salt solutions. These walls were briefly mixed with low concentration metal solutions (5mM for 10 min at 22°C), were well washed with deionized distilled water, and the quantity of metal uptake (atomic absorption and X-ray fluorescence), the type of staining response (electron scattering profile of thin-sections), and the crystallinity of the deposition product (X-ray diffraction of embedded specimens) determined.Since most biological material possesses little electron scattering ability electron microscopists have been forced to depend on heavy metal impregnation of the specimen before obtaining thin-section data. Our experience with these walls suggested that they may provide a suitable model system with which to study the sites of reaction for this metal deposition.

Mass Determination by Direct Measurement of Electron Scattering

1975 ◽  
Vol 33 ◽  
pp. 240-241
Author(s):  
M. K. Lamvik ◽  
A. V. Crewe
Keyword(s):  
Cross Section ◽  
Electron Scattering ◽  
Mass Density ◽  
Variable Mass ◽  
Scattering Cross Section ◽  
Mass Determination ◽  
Number Density ◽  
Cross Sectional ◽  
Thin Slice ◽  
Scattering Cross

If a molecule or atom of material has molecular weight A, the number density of such units is given by n=Nρ/A, where N is Avogadro's number and ρ is the mass density of the material. The amount of scattering from each unit can be written by assigning an imaginary cross-sectional area σ to each unit. If the current I0 is incident on a thin slice of material of thickness z and the current I remains unscattered, then the scattering cross-section σ is defined by I=IOnσz. For a specimen that is not thin, the definition must be applied to each imaginary thin slice and the result I/I0 =exp(-nσz) is obtained by integrating over the whole thickness. It is useful to separate the variable mass-thickness w=ρz from the other factors to yield I/I0 =exp(-sw), where s=Nσ/A is the scattering cross-section per unit mass.

Sign in / Sign up

Export Citation Format

Share Document