The influence of local phonon modes in a wide-band matrix on the tunnel current-voltage characteristics of quasi-zero-dimensional structures

2014 ◽  
Vol 69 (4) ◽  
pp. 340-348 ◽  
Author(s):  
V. Ch. Zhukovsky ◽  
V. D. Krevchik ◽  
M. B. Semenov ◽  
R. V. Zaytsev ◽  
D. O. Filatov ◽  
...  
Keyword(s):  
Wide Band ◽  
Phonon Modes ◽  
Tunnel Current ◽  
Band Matrix ◽  
Current Voltage ◽  
Current Voltage Characteristics

scholarly journals Разработка и исследование туннельных p-i-n-диодов GaAs/AlGaAs для многопереходных преобразователей мощного лазерного излучения

2020 ◽  
Vol 54 (3) ◽  
pp. 285
Author(s):  
В.С. Калиновский ◽  
Е.В. Контрош ◽  
Г.В. Климко ◽  
С.В. Иванов ◽  
В.С. Юферев ◽  
...  
Keyword(s):  
Current Density ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Tunnel Diode ◽  
Tunnel Diodes ◽  
Tunnel Current ◽  
Type Layer ◽  
Current Voltage ◽  
Current Voltage Characteristics

Fabrication of connecting tunnel diodes with high peak tunnel current density exceeding the short-circuit current density of photoactive p−n junctions is an important task in development of multi-junction III−V photovoltaic converters of high-power optical radiation. Based on the results of a numerical simulation of tunnel diode current−voltage characteristics, a method is suggested for raising the peak tunnel current density by connecting a thin undoped i-type layer with thickness of several nanometers between the degenerate layers of a tunnel diode. The method of molecular-beam epitaxy was used to grow p−i−n GaAs/Al0.2Ga0.8As structures of connecting tunnel diodes with peak tunnel current density of up to 200A/cm2 .

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