scholarly journals Formation of Buried SiC by High-Dose MeV Ion Implantation at High Temperature.

Shinku ◽  
1993 ◽  
Vol 36 (11) ◽  
pp. 856-861
Author(s):  
Akiyoshi CHAYAHARA ◽  
Masato KIUCHI ◽  
Atsushi KINOMURA ◽  
Yoshiaki MOKUNO ◽  
Yuji HORINO ◽  
...  
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
High Dose

High Dose High Temperature Ion Implantation of Ge into 4H-SiC

2006 ◽  
Vol 527-529 ◽  
pp. 851-854 ◽  
Author(s):  
Thomas Kups ◽  
Petia Weih ◽  
M. Voelskow ◽  
Wolfgang Skorupa ◽  
Jörg Pezoldt
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
Lattice Site ◽  
Lattice Distortion ◽  
Stacking Faults ◽  
Implantation Dose ◽  
Location Analysis ◽  
High Dose ◽  
Site Location ◽  
Different Types

A box like Ge distribution was formed by ion implantation at 600°C. The Ge concentration was varied from 1 to 20 %. The TEM investigations revealed an increasing damage formation with increasing implantation dose. No polytype inclusions were observed in the implanted regions. A detailed analysis showed different types of lattice distortion identified as insertion stacking faults. The lattice site location analysis by “atomic location by channelling enhanced microanalysis” revealed that the implanted Ge is mainly located at interstitial positions.

Vertical edge graphite layer on recovered diamond (001) after high-dose ion implantation and high-temperature annealing

2017 ◽  
Vol 254 (9) ◽  
pp. 1700040 ◽  
Author(s):  
Masafumi Inaba ◽  
Akinori Seki ◽  
Kazuaki Sato ◽  
Tomoyoshi Kushida ◽  
Taisuke Kageura ◽  
...  
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
High Dose ◽  
High Temperature Annealing ◽  
Vertical Edge ◽  
Graphite Layer

High temperature high dose C ion implantation in epitaxial SiGe

1996 ◽  
Vol 120 (1-4) ◽  
pp. 173-176 ◽  
Author(s):  
A. Pérez-Rodríguez ◽  
A. Romano-Rodríguez ◽  
C. Serre ◽  
L. Calvo-Barrio ◽  
R. Cabezas ◽  
...  
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
High Dose

High Dose High Temperature Ion Implantation of Ge into 4H-SiC

2006 ◽  
pp. 851-854
Author(s):  
Thomas Kups ◽  
Petia Weih ◽  
M. Voelskow ◽  
Wolfgang Skorupa ◽  
Jörg Pezoldt
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
High Dose

Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions

2009 ◽  
Vol 615-617 ◽  
pp. 473-476 ◽  
Author(s):  
Evgenia V. Kalinina ◽  
M.V. Zamoryanskaya ◽  
E.V. Kolesnikova ◽  
Alexander A. Lebedev
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
Structural Features ◽  
High Dose ◽  
Radiation Defects ◽  
Transmission Electron ◽  
Order Of Magnitude ◽  
Cathodoluminescence Imaging ◽  
First Time

Structural features of 4H-SiC structures with CVD epitaxial layers, subjected to high-dose Al ion implantation and short high-temperature pulse annealing, have been studied using secondary-ion mass-spectroscopy, transmission electron spectroscopy, local cathodoluminescence and cathodoluminescence imaging on cross-sectionally cleaved surfaces of the structures. An accelerated diffusion of radiation defects, a “long-range action effect”, with a diffusion coefficient of 10 -9 cm2 s-1 after high-dose Al ion implantation and the gettering effect after subsequent pulsed thermal annealing have been observed for the first time. After a short high-temperature annealing, the quality of the starting material is improved in the course of formation of implantation-doped p+-n junctions due to defect gettering. As a result of the decrease in the concentration of optical active defect centers as well of deep centers by an order of magnitude in CVD layer, an increase in the diffusion length of minority carriers (Lp) by a factor of 1.5-2 was obtained.

scholarly journals Vertical edge graphite layer on recovered diamond (001) after high-dose ion implantation and high-temperature annealing (Phys. Status Solidi B 9/2017)

2017 ◽  
Vol 254 (9) ◽  
pp. 1770249
Author(s):  
Masafumi Inaba ◽  
Akinori Seki ◽  
Kazuaki Sato ◽  
Tomoyoshi Kushida ◽  
Taisuke Kageura ◽  
...  
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
High Dose ◽  
High Temperature Annealing ◽  
Vertical Edge ◽  
Graphite Layer

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

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