High Dose High Temperature Ion Implantation of Ge into 4H-SiC
2006 ◽
pp. 851-854
2006 ◽
Vol 527-529
◽
pp. 851-854
◽
Keyword(s):
2017 ◽
Vol 254
(9)
◽
pp. 1700040
◽
Keyword(s):
1996 ◽
Vol 120
(1-4)
◽
pp. 173-176
◽
1994 ◽
Vol 12
(2)
◽
pp. 923
◽
2009 ◽
Vol 615-617
◽
pp. 473-476
◽
1997 ◽
Vol 127-128
◽
pp. 265-268
◽
Keyword(s):
1985 ◽
Vol 43
◽
pp. 300-301
Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing
1989 ◽
Vol 47
◽
pp. 604-605