Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions

2009 ◽  
Vol 615-617 ◽  
pp. 473-476 ◽  
Author(s):  
Evgenia V. Kalinina ◽  
M.V. Zamoryanskaya ◽  
E.V. Kolesnikova ◽  
Alexander A. Lebedev
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
Structural Features ◽  
High Dose ◽  
Radiation Defects ◽  
Transmission Electron ◽  
Order Of Magnitude ◽  
Cathodoluminescence Imaging ◽  
First Time

Structural features of 4H-SiC structures with CVD epitaxial layers, subjected to high-dose Al ion implantation and short high-temperature pulse annealing, have been studied using secondary-ion mass-spectroscopy, transmission electron spectroscopy, local cathodoluminescence and cathodoluminescence imaging on cross-sectionally cleaved surfaces of the structures. An accelerated diffusion of radiation defects, a “long-range action effect”, with a diffusion coefficient of 10 -9 cm2 s-1 after high-dose Al ion implantation and the gettering effect after subsequent pulsed thermal annealing have been observed for the first time. After a short high-temperature annealing, the quality of the starting material is improved in the course of formation of implantation-doped p+-n junctions due to defect gettering. As a result of the decrease in the concentration of optical active defect centers as well of deep centers by an order of magnitude in CVD layer, an increase in the diffusion length of minority carriers (Lp) by a factor of 1.5-2 was obtained.

Surface Elevation and Strain in Ion Implanted GaN

2000 ◽  
Vol 639 ◽  
Author(s):  
B. Molnar ◽  
S. B. Qadri ◽  
S. Schiestel ◽  
R. M. Stroud ◽  
C. A. Carosella
Keyword(s):  
Ion Implantation ◽  
Rapid Expansion ◽  
Surface Elevation ◽  
High Dose ◽  
Continuous Increase ◽  
Transmission Electron ◽  
Out Of Plane ◽  
Order Of Magnitude ◽  
Plane Change ◽  
Ion Implanted

ABSTRACTWe report on the investigation of X-ray strains and surface elevation of ion-implanted GaN as a function of ion fluence. Si, Mg and Ar ion implantation are examined. A continuous increase in lattice constants, a and c occur for doses up to near 1 × 1015/cm2. At higher doses there emerges a volume expansion of the GaN perpendicular to the surface which is an order of magnitude larger than any observed out-of-plane change in strain. The rapid expansion correlates with the onset of GaN amorphization. Transmission electron microscopy indicates that cavities form after 5 × 1016/cm2, 100 keV Ar+ implantation. For low temperature implantation, the cavities lie near the peak of the ion range For room temperature implantation, the cavities coalesce at the surface and push out the GaN perpendicular to the surface. AFM measurements confirm the presence of large bumps on the surface. The very high dose ion implantation have important consequences to etching rates of GaN and to the ability to produce n+, but not p+ doping with ion implantation.

TEM study of buried cobalt disilicide layers formed by ion implantation: Identification of cobalt monosilicide inclusions

1990 ◽  
Vol 48 (4) ◽  
pp. 576-577
Author(s):  
A. De Veirman ◽  
J. Van Landuyt ◽  
K.J. Reeson ◽  
R. Gwilliam ◽  
C. Jeynes ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Annealing Treatment ◽  
Silicon On Insulator ◽  
High Dose ◽  
Nitrogen Flow ◽  
Cobalt Disilicide ◽  
Transmission Electron ◽  
Beam Heating ◽  
Co Concentration ◽  
Silicon On Insulator Technology

In analogy to the formation of SIMOX (Separation by IMplanted OXygen) material which is presently the most promising silicon-on-insulator technology, high-dose ion implantation of cobalt in silicon is used to synthesise buried CoSi2 layers. So far, for high-dose ion implantation of Co in Si, only formation of CoSi2 is reported. In this paper it will be shown that CoSi inclusions occur when the stoichiometric Co concentration is exceeded at the peak of the Co distribution. 350 keV Co+ ions are implanted into (001) Si wafers to doses of 2, 4 and 7×l017 per cm2. During the implantation the wafer is kept at ≈ 550°C, using beam heating. The subsequent annealing treatment was performed in a conventional nitrogen flow furnace at 1000°C for 5 to 30 minutes (FA) or in a dual graphite strip annealer where isochronal 5s anneals at temperatures between 800°C and 1200°C (RTA) were performed. The implanted samples have been studied by means of Rutherford Backscattering Spectroscopy (RBS) and cross-section Transmission Electron Microscopy (XTEM).

Formation of Sic, Si3N4 and SiO2 by High-Dose Ion Implantation and Laser Annealing

1980 ◽  
Vol 1 ◽  
Author(s):  
S.W. Chiang ◽  
Y.S. Liu ◽  
R.F. Reihl
Keyword(s):  
Ion Implantation ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
High Dose ◽  
Pulsed Laser Annealing ◽  
Transmission Electron ◽  
A Cell ◽  
Ft Ir ◽  
Ft Ir Spectroscopy

ABSTRACTHigh-dose ion implantation (1017 ions-cm−2) of C+, N+, and O+ at 50 KeV into silicon followed by pulsed laser annealing at 1.06 μm was studied. Formation of SiC, Si3N4, and SiO2 has been observed and investigated using Transmission Electron Microscopy (TEM) and Differential Fourier-Transform Infrared (FT-IR) Spectroscopy. Furthermore, in N+-implanted and laser-annealed silicon samples, we have observed a cell-like structure which has been identified to be spheroidal polycrystalline silicon formed by the rapid laser irradiation.

A method of precise misorientation determination

2003 ◽  
Vol 36 (6) ◽  
pp. 1319-1323 ◽  
Author(s):  
A. Morawiec
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Spatial Resolution ◽  
Standard Procedure ◽  
Good Spatial Resolution ◽  
Transmission Electron ◽  
Order Of Magnitude ◽  
Achievable Accuracy ◽  
Better Than

A method that improves the accuracy of misorientations determined from Kikuchi patterns is described. It is based on the fact that some parameters of a misorientation calculated from two orientations are more accurate than other parameters. A procedure which eliminates inaccurate elements is devised. It requires at least two foil inclinations. The quality of the approach relies on the possibility to set large sample-to-detector distances and the availability of good spatial resolution of transmission electron microscopy. Achievable accuracy is one order of magnitude better than the accuracy of the standard procedure.

scholarly journals Thermal Annealing of High Dose P Implantation in 4H-SiC

2019 ◽  
Vol 963 ◽  
pp. 399-402 ◽  
Author(s):  
Cristiano Calabretta ◽  
Massimo Zimbone ◽  
Eric G. Barbagiovanni ◽  
Simona Boninelli ◽  
Nicolò Piluso ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Epitaxial Layer ◽  
Point Defects ◽  
High Dose ◽  
Double Step ◽  
Post Annealing ◽  
Transmission Electron

In this work, we have studied the crystal defectiveness and doping activation subsequent to ion implantation and post-annealing by using various techniques including photoluminescence (PL), Raman spectroscopy and transmission electron microscopy (TEM). The aim of this work was to test the effectiveness of double step annealing to reduce the density of point defects generated during the annealing of a P implanted 4H-SiC epitaxial layer. The outcome of this work evidences that neither the first 1 hour isochronal annealing at 1650 - 1700 - 1750 °C, nor the second one at 1500 °C for times between 4 hour and 14 hour were able to recover a satisfactory crystallinity of the sample and achieve dopant activations exceeding 1%.

High Dose High Temperature Ion Implantation of Ge into 4H-SiC

2006 ◽  
Vol 527-529 ◽  
pp. 851-854 ◽  
Author(s):  
Thomas Kups ◽  
Petia Weih ◽  
M. Voelskow ◽  
Wolfgang Skorupa ◽  
Jörg Pezoldt
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
Lattice Site ◽  
Lattice Distortion ◽  
Stacking Faults ◽  
Implantation Dose ◽  
Location Analysis ◽  
High Dose ◽  
Site Location ◽  
Different Types

A box like Ge distribution was formed by ion implantation at 600°C. The Ge concentration was varied from 1 to 20 %. The TEM investigations revealed an increasing damage formation with increasing implantation dose. No polytype inclusions were observed in the implanted regions. A detailed analysis showed different types of lattice distortion identified as insertion stacking faults. The lattice site location analysis by “atomic location by channelling enhanced microanalysis” revealed that the implanted Ge is mainly located at interstitial positions.

The Role of Implant Temperature in the Formation of Thin Buried Oxide Layers

1986 ◽  
Vol 74 ◽  
Author(s):  
Alice E. White ◽  
K. T. Short ◽  
L. N. Pfeiffer ◽  
K. W. West ◽  
J. L. Batstone
Keyword(s):  
High Temperature ◽  
Crystalline Material ◽  
High Dose ◽  
Si Substrate ◽  
High Temperature Anneal ◽  
Damage Structure ◽  
Amorphous Si ◽  
Substrate Temperatures

AbstractFrom the early work on high dose oxygen implantation for buried SiO2 formation, it is apparent that the temperature of the Si substrate during the implant has a strong influence on the quality of both the SiO2 layer and the overlying Si. This, in turn, can be related to the damage from the oxygen implant. For substrate temperatures < ∼ 300°C, amorphous Si is created during the implant and leads to the formation of twins or polycrystalline Si during the subsequent high temperature (>1300°C) anneal. At higher substrate temperatures (<∼400°C), dynamic annealing eliminates the amorphous Si, but the implanted oxygen appears to segregate during the implant leading to oxygen-rich amorphous regions imbedded in regions of crystalline material. As the amorphous regions start to coalesce and form SiO2 during the high temperature anneal, they trap crystalline Si which cannot escape by diffusion. This process can be circumvented by using a randomizing Si implant to change the damage structure from the oxygen implant before annealing. We have seen these effects clearly in sub-stoichiometric implants, and believe they are also operative during stoichiometric implants.

Modeling of Damage Evolution During Ion Implantation Into Silicon: A Monte Carlo Approach

1996 ◽  
Vol 439 ◽  
Author(s):  
S. Tian ◽  
M. Morris ◽  
S. J. Morris ◽  
B. Obradovic ◽  
A. F. Tasch
Keyword(s):  
Ion Implantation ◽  
Damage Evolution ◽  
Damage Model ◽  
Amorphous Layer ◽  
High Dose ◽  
Defect Production ◽  
Implantation Damage ◽  
Wide Range ◽  
Physically Based ◽  
First Time

AbstractWe present for the first time a physically based ion implantation damage model which successfully predicts both the as-implanted impurity range profiles and the damage profiles for a wide range of implant conditions for arsenic, boron, phosphorus, and BF2 implants into single-crystal (100) silicon. In addition, the amorphous layer thicknesses predicted by this damage model for high dose implants are also generally in excellent agreement with experiments. This damage model explicitly simulates the defect production and its subsequent evolution into the experimentally observable profiles for the first time. The microscopic mechanisms for damage evolution are further discussed.

scholarly journals Binding of Copper and Nickel to Cavities in Silicon Formed by Helium Ion Implantation

1993 ◽  
Vol 316 ◽  
Author(s):  
S.M. Myers ◽  
D.M. Follstaedt ◽  
D.M. Bishop
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Internal Surfaces ◽  
Transmission Electron ◽  
Beam Analysis ◽  
Helium Ion ◽  
Saturation Coverage ◽  
Order Of Magnitude ◽  
Metallic Impurities ◽  
Initial Results

ABSTRACTCavities formed in Si by He ion implantation and annealing are shown be strong traps for Cu and Ni impurities. Experiments utilizing ion-beam analysis and transmission electron microscopy indicate that Cu is trapped at the internal surfaces of cavities up to ≈1 monolayer coverage with a binding energy of 2.2±0.2 eV relative to solution. This is greater than the heat of solution from the precipitated Cu3Si phase, determined to be 1.7 eV in agreement with earlier work. Copper at cavity-wall sites is reversibly replaced by H during heating in H2 gas, indicating the relative stability of the two surface terminations. Initial results for Ni impurities indicate that trapping at cavities is again energetically preferred to suicide formation. The saturation coverage of Ni on the internal surfaces, however, is an order of magnitude smaller for Ni than Cu, consistent with published studies of external-surface adsorption. These results suggest that cavity trapping may getter metallic impurities in Si more effectively than methods based on suicide precipitation.

Hacroscopic Defects in Epitaxial Silicon on Simox and in Annealed SIMOX

1987 ◽  
Vol 107 ◽  
Author(s):  
A. Mogro-Campero ◽  
N. Lewis ◽  
S.A. Al-Marayati
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Dislocation Density ◽  
Silicon Surface ◽  
Epitaxial Silicon ◽  
Buried Oxide ◽  
Transmission Electron ◽  
Annealing Step ◽  
Order Of Magnitude

AbstractEpitaxial silicon layers of 5¼m were grown on SIMOX wafers. The dislocation density decreases by more than an order of magnitude as a function of distance away from the buried oxide. Shallow pits (about 0.5 urn deep and several um wide) are observed on the epitaxial layer with a density of 1-2 mm2. Their density did not change with various processing variations. A search for the origin of the pits by transmission electron microscopy reveals that they may be associated with regions of irregularly thin and sometimes missing buried oxide, which appear after the usual high temperature SIMOX annealing step. These defective regions in the buried oxide appear to initiate twinned growth in the epitaxial silicon, and are associated with pits at the top epitaxial silicon surface.

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