SMT Ceramic Capacitor Failure Mechanisms, Isolation Tools, Techniques and Analysis Methods

2000 ◽  
Author(s):  
Ralph A. Carbone ◽  
David J. Roche
Keyword(s):  
Failure Mechanisms ◽  
Mechanical Damage ◽  
Acoustic Microscopy ◽  
Root Cause ◽  
Successful Isolation ◽  
Ceramic Capacitor ◽  
Ceramic Capacitors ◽  
Cause Of Failure ◽  
Electronic Parts ◽  
Tools And Techniques

Abstract Surface Mount Technology (SMT) ceramic capacitors are widely used on virtually every type of electronic product. In computer systems, SMT capacitors populate the majority of electronic parts found on each Printed Circuit Assembly (PCA) within the product, primarily as bypass or coupling devices between power and ground. As such, the opportunity for failure is substantially higher than with other commonly used active or passive components. Additionally, the relatively small ceramic bodies are prone to mechanical damage. Their proportionately high numbers, sensitivity to mechanical stress and difficulty in isolating to a specific failing device on the PCA (since many of these parts are in parallel with many other identical capacitors) all combine to make the successful isolation and analysis of the root cause of failure particularly difficult for the failure analyst. Often, the cause of failure is misdiagnosed, or the evidence is compromised by the methods used to perform the analysis. This paper will discuss the common failure mechanisms associated with SMT ceramic capacitors, as well as some innovative non-destructive isolation tools and techniques, including C-Mode Scanning Acoustic Microscopy (C-SAM), Infrared thermography (IR) and Micro-Focus X-ray analysis. Several case studies will be cited which demonstrate each of the mechanisms and methods. Additionally, the processes used to properly analyze these defects will be examined.

Mis-identified Failures in FETs

2008 ◽  
Author(s):  
Mark Gores
Keyword(s):  
Rapid Determination ◽  
Short Circuit ◽  
Mechanical Damage ◽  
Power Supplies ◽  
Screening Methods ◽  
Power Switching ◽  
Root Cause ◽  
Switching Power ◽  
Cause Of Failure

Abstract Several recent failure analyses have found that what appeared to be typical source to drain over current damage, was actually caused by intermittently open circuited gate bonds. In power switching applications, such as inverters and switching power supplies, the timing of the transistor’s turn ons and turn offs can be critical. For example in an inverter if the transistor between the positive supply and phase A does not turn off before the transistor between the negative supply and phase A turns on there will be a short circuit between the positive and negative supplies resulting in a high current condition and the failure of both transistors. The original cause of the failure can be masked after the catastrophic failure of the die. The gate does not necessarily remain open circuited. It can reestablish continuity due to the short circuiting of the gate on the die, which causes arcing at the open bond. It is easy to overlook this mechanism in the normal FA process, since there is obvious and sometimes spectacular damage to the die and usually pressure to make a rapid determination of the root cause of failure. The gate wires are more likely to become open circuited because there is usually only 1 wire and it is sometimes a much smaller wire. The wires can become open circuited for a variety of reasons: Mechanical damage to the leads. Inadequate bonds at either end of the wire. Excessive intermetallic formation. Several case histories of open gate wires as well as other open bonds, how they were discovered, and possible screening methods will be discussed.

Root Cause Analyses of Metal Bridging for Copper Damascene Process

2005 ◽  
Author(s):  
Z. G. Song ◽  
S. P. Neo ◽  
S. K. Loh ◽  
C. K. Oh
Keyword(s):  
Failure Mechanisms ◽  
Copper Corrosion ◽  
Microelectronic Device ◽  
Root Cause ◽  
Damascene Process ◽  
New Process ◽  
Copper Cmp

Abstract New process will introduce new failure mechanisms during microelectronic device manufacturing. Even if the same defect, its root causes can be different for different processes. For aluminum(Al)-tungsten(W) metallization, the root cause of metal bridging is quite simple and mostly it is blocked etch or under-etch. But, for copper damascene process, the root causes of metal bridging are complicated. This paper has discussed the various root causes of metal bridging for copper damascene process, such as those related to litho-etch issue, copper CMP issue, copper corrosion issue and so on.

Counterfeit Parts Recognition and Detection for Failure Analysts

2010 ◽  
Author(s):  
Katherine V. Whittington
Keyword(s):  
Thermal Cycle ◽  
Visual Inspection ◽  
Acoustic Microscopy ◽  
Scanning Acoustic Microscopy ◽  
3D Measurement ◽  
X Ray ◽  
Wide Range ◽  
Electronic Parts ◽  
Testing Awareness

Abstract The electronics supply chain is being increasingly infiltrated by non-authentic, counterfeit electronic parts, whose use poses a great risk to the integrity and quality of critical hardware. There is a wide range of counterfeit parts such as leads and body molds. The failure analyst has many tools that can be used to investigate counterfeit parts. The key is to follow an investigative path that makes sense for each scenario. External visual inspection is called for whenever the source of supply is questionable. Other methods include use of solvents, 3D measurement, X-ray fluorescence, C-mode scanning acoustic microscopy, thermal cycle testing, burn-in technique, and electrical testing. Awareness, vigilance, and effective investigations are the best defense against the threat of counterfeit parts.

Identifying the Root Cause of Source-Drain Leakage Caused Soft Fail in Advanced Bulk FinFET Devices

2018 ◽  
Author(s):  
Liangshan Chen ◽  
Yuting Wei ◽  
Tanya Schaeffer ◽  
Chongkhiam Oh
Keyword(s):  
Careful Analysis ◽  
Physical Analysis ◽  
Device Structure ◽  
Tem Analysis ◽  
Root Cause ◽  
3D Architecture ◽  
Cause Of Failure ◽  
Electrical Analysis ◽  
Electrical Data

Abstract The paper reports the investigation on the root cause of source-drain leakage in bulk FinFET devices. While the failing device was readily isolated by nanoprobing technique and the electrical analysis pinpointed the potential defect location inside the Fin channel, the identification of physical root cause went through extreme challenges imposed by the tiny-sized device and the unique FinFET 3D architecture. The initial TEM analysis was misled by the projection of a species in the lamella surface and thus could not explain the electrical data. Careful analysis on the device structure was able to identify the origin of the species and led to the discovery of the actual root cause. This paper will provide the analysis details leading to the findings, and highlight the role of electrical understanding in not only providing guidance for physical analysis but also revealing the true root cause of failure in FinFET devices.

Failure Localization in a Multistage S-Band Power Amplifier

2016 ◽  
Author(s):  
Clarence Rebello ◽  
Ted Kolasa ◽  
Parag Modi
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Fault Tree ◽  
Root Cause ◽  
Failure Investigation ◽  
Band Power ◽  
Cause Of Failure ◽  
Design Materials ◽  
Board Level ◽  
Failure Localization

Abstract During the search for the root cause of a board level failure, all aspects of the product must be revisited and investigated. These aspects encompass design, materials, and workmanship. In this discussion, the failure investigation involved an S-Band Power Amplifier assembly exhibiting abnormally low RF output power where initial troubleshooting did not provide a clear cause of failure. A detailed fault tree drove investigations that narrowed the focus to a few possible root causes. However, as the investigation progressed, multiple contributors were eventually discovered, some that were not initially considered.

Case Study—Failure Analysis of a Multiplexer

2016 ◽  
Author(s):  
Michael Woo ◽  
Marcos Campos ◽  
Luigi Aranda
Keyword(s):  
Failure Analysis ◽  
High Reliability ◽  
Component Failure ◽  
Root Cause ◽  
Knowing That ◽  
Cause Of Failure ◽  
The Cost

Abstract A component failure has the potential to significantly impact the cost, manufacturing schedule, and/or the perceived reliability of a system, especially if the root cause of the failure is not known. A failure analysis is often key to mitigating the effects of a componentlevel failure to a customer or a system; minimizing schedule slips, minimizing related accrued costs to the customer, and allowing for the completion of the system with confidence that the reliability of the product had not been compromised. This case study will show how a detailed and systemic failure analysis was able to determine the exact cause of failure of a multiplexer in a high-reliability system, which allowed the manufacturer to confidently proceed with production knowing that the failure was not a systemic issue, but rather that it was a random “one time” event.

Root Cause Analysis for Pin Leakage

2016 ◽  
Author(s):  
Zhigang Song ◽  
Jochonia Nxumalo ◽  
Manuel Villalobos ◽  
Sweta Pendyala
Keyword(s):  
Failure Analysis ◽  
Root Cause Analysis ◽  
Advanced Technology ◽  
Process Step ◽  
Cause Analysis ◽  
Hard Mask ◽  
Technology Node ◽  
Root Cause ◽  
Tools And Techniques

Abstract Pin leakage continues to be on the list of top yield detractors for microelectronics devices. It is simply manifested as elevated current with one pin or several pins during pin continuity test. Although many techniques are capable to globally localize the fault of pin leakage, root cause analysis and identification for it are still very challenging with today’s advanced failure analysis tools and techniques. It is because pin leakage can be caused by any type of defect, at any layer in the device and at any process step. This paper presents a case study to demonstrate how to combine multiple techniques to accurately identify the root cause of a pin leakage issue for a device manufactured using advanced technology node. The root cause was identified as under-etch issue during P+ implantation hard mask opening for ESD protection diode, causing P+ implantation missing, which was responsible for the nearly ohmic type pin leakage.

Infra-Red Reflectance Microscopy (IRRM) for Daisy Chain Flip Chip Device Failure Analysis

2004 ◽  
Author(s):  
Carlo Grilletto ◽  
Steve Hsiung ◽  
Andrew Komrowski ◽  
John Soopikian ◽  
Daniel J.D. Sullivan ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Flip Chip ◽  
State Of The Art ◽  
Failure Mechanisms ◽  
Simple Metal ◽  
X Ray ◽  
Infra Red ◽  
Cause Of Failure ◽  
Reflectance Microscopy ◽  
Ir Emission

Abstract This paper describes a method to "non-destructively" inspect the bump side of an assembled flip-chip test die. The method is used in conjunction with a simple metal-connecting "modified daisy chain" die and makes use of the fact that polished silicon is transparent to infra-red (IR) light. The paper describes the technique, scope of detection and examples of failure mechanisms successfully identified. It includes an example of a shorting anomaly that was not detectable with the state of the art X-ray equipment, but was detected by an IR emission microscope. The anomalies, in many cases, have shown to be the cause of failure. Once this has been accomplished, then a reasonable deprocessing plan can be instituted to proceed with the failure analysis.

Failure Analysis of Broken Stitch Bonds in TSSOP Packages Using Scanning Acoustic Microscopy (SAM) and Time Domain Reflectometry (TDR)

2004 ◽  
Author(s):  
Bilal Abd-AlRahman ◽  
Corey Lewis ◽  
Todd Simons
Keyword(s):  
Failure Analysis ◽  
Mechanical Stress ◽  
Time Domain ◽  
Open Circuit ◽  
Time Domain Reflectometry ◽  
Acoustic Microscopy ◽  
Scanning Acoustic Microscopy ◽  
Root Cause ◽  
Analysis Application

Abstract A failure analysis application utilizing scanning acoustic microscopy (SAM) and time domain reflectometry (TDR) for failure analysis has been developed to isolate broken stitch bonds in thin shrink small outline package (TSSOP) devices. Open circuit failures have occurred in this package due to excessive bending of the leads during assembly. The tools and their specific application to this technique as well as the limitations of C-SAM, TDR and radiographic analyses are discussed. By coupling C-SAM and TDR, a failure analyst can confidently determine whether the cause of an open circuit in a TSSOP package is located at the stitch bond. The root cause of the failure was determined to be abnormal mechanical stress placed on the pins during the lead forming operation. While C-SAM and TDR had proven useful in the analysis of TSSOP packages, it can potentially be expanded to other wire-bonded packages.

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