Infra-Red Reflectance Microscopy (IRRM) for Daisy Chain Flip Chip Device Failure Analysis

2004 ◽  
Author(s):  
Carlo Grilletto ◽  
Steve Hsiung ◽  
Andrew Komrowski ◽  
John Soopikian ◽  
Daniel J.D. Sullivan ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Flip Chip ◽  
State Of The Art ◽  
Failure Mechanisms ◽  
Simple Metal ◽  
X Ray ◽  
Infra Red ◽  
Cause Of Failure ◽  
Reflectance Microscopy ◽  
Ir Emission

Abstract This paper describes a method to "non-destructively" inspect the bump side of an assembled flip-chip test die. The method is used in conjunction with a simple metal-connecting "modified daisy chain" die and makes use of the fact that polished silicon is transparent to infra-red (IR) light. The paper describes the technique, scope of detection and examples of failure mechanisms successfully identified. It includes an example of a shorting anomaly that was not detectable with the state of the art X-ray equipment, but was detected by an IR emission microscope. The anomalies, in many cases, have shown to be the cause of failure. Once this has been accomplished, then a reasonable deprocessing plan can be instituted to proceed with the failure analysis.

Applications of 3D X-Ray Microscopy for Advanced Package Development

2011 ◽  
Vol 2011 (1) ◽  
pp. 001078-001083 ◽  
Author(s):  
K. Fahey ◽  
R. Estrada ◽  
L. Mirkarimi ◽  
R. Katkar ◽  
D. Buckminster ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Flip Chip ◽  
Development Stage ◽  
Development Effort ◽  
X Ray ◽  
Structural Details ◽  
Volumetric Images ◽  
Advanced Packaging ◽  
Solder Fatigue ◽  
Non Destructive

This paper describes the utilization of non-destructive imaging using 3D x-ray microscopy for package development and failure analysis. Four case studies are discussed to explain our methodology and its impact on our advanced packaging development effort. Identifying and locating failures embedded deep inside the package, such as a solder fatigue failure within a flip chip package, without the need for physical cross-sectioning is of substantial benefit because it preserves the package for further analysis. Also of utility is the ability to reveal the structural details of the package while producing superior quality 2D and volumetric images. The technique could be used not only for analysis of defects and failures, but also to characterize geometries and morphologies during the process and package development stage.

Failure analysis of coated galvanized steel panels

2017 ◽  
Vol 64 (4) ◽  
pp. 424-431
Author(s):  
Anwar Ul-Hamid ◽  
Huseyin Saricimen ◽  
Abdul Quddus ◽  
Luai M. Al-Hems
Keyword(s):  
Light Microscopy ◽  
Failure Analysis ◽  
Metal Sheet ◽  
Galvanized Steel ◽  
Bottom Surface ◽  
Atmospheric Conditions ◽  
Content Type ◽  
X Ray ◽  
Cause Of Failure ◽  
Steel Panels

Purpose The purpose of this paper was to determine the mode and cause of failure of polyester-coated galvanized corrugated steel sheets that exhibited degradation of the coating after seven months into service. Design/methodology/approach Visual inspection and light microscopy revealed the extent of damage exhibited by the panels. Standard metallographic techniques were used to prepare samples obtained from both unused and failed sections. Light microscopy, scanning electron microscopy combined with energy dispersive x-ray spectroscopy and x-ray diffraction techniques were used to study the surface morphology, microstructural features, elemental composition and structure of the samples. Findings The failure occurred in the form of delamination and blistering of coated layer. Presence of solar radiation, humidity and water retention resulted in loss of adhesion, leading to coating delamination and flaking especially at the top surface. The coating at the bottom surface of the panels showed evidence of blistering caused by water vapor differential that existed between the environment and the coating because of prolonged (four months) wet conditions that existed at the manufacturer’s site during storage. Practical implications It is recommended that the coated panels are stored in covered area where direct exposure to atmospheric conditions can be prevented. If open storage is unavoidable, then the use of tarpaulin or plastic sheet as covering and vapor-phase inhibitors was recommended. Originality/value This paper provides an account of failure analysis of metal sheet panels. It identifies the mode and cause of failure and also provides recommendations to avoid such occurrences in the future. The information contained in this paper is useful for plant engineers and project managers working in the metal sheet industry.

scholarly journals Examination of historical paintings by state-of-the-art hyperspectral imaging methods: from scanning infra-red spectroscopy to computed X-ray laminography

2014 ◽  
Vol 2 (1) ◽  
pp. 13 ◽  
Author(s):  
Stijn Legrand ◽  
Frederik Vanmeert ◽  
Geert Van der Snickt ◽  
Matthias Alfeld ◽  
Wout De Nolf ◽  
...  
Keyword(s):  
Hyperspectral Imaging ◽  
State Of The Art ◽  
Imaging Methods ◽  
X Ray ◽  
Infra Red

Time Domain Reflectometry as a Device Packaging Level Failure Analysis and Failure Localization Tool

2000 ◽  
Author(s):  
Damion T. Searls ◽  
Anura Don ◽  
Emilie Dy ◽  
Deepak Goyal
Keyword(s):  
Failure Analysis ◽  
Time Domain ◽  
Flip Chip ◽  
Low Voltage ◽  
Time Domain Reflectometry ◽  
Stress Tests ◽  
X Ray ◽  
Customer Returns ◽  
Failure Location ◽  
Electrical Connectivity

Abstract Detecting failure in electrical connectivity at the component packaging level is a major expenditure of the industry’s failure analysis (FA) resources. These package failures can result from material/manufacturing excursions, stress tests, and/or customer returns. However, many of the methods employed currently (such as X-ray or crosssectioning) can fall short in terms of throughput time, or success rate. Moreover, many FA techniques can be destructive and therefore leave the sample useless for subsequent tests. On the other hand, time domain reflectometry (TDR) can be used as a component packaging level FA tool which meets the needs of quickly, precisely, and non-destructively locating electrical connectivity problems in signal traces. Once the failure location has been pin pointed, other FA methods (X-ray, cross-section, etc.) can be used more easily to determine why the failure occurred. Since TDR testing involves no physical preparation, the sample will be completely intact for subsequent tests. TDR uses a low voltage, low current, and very short rise time voltage pulse to determine the impedance of a signal trace as a function of time. With a waveform of trace impedance versus time, not only can the presence of a failure be detected, but the distance along the trace to the anomaly can also be quickly determined. This paper presents TDR as a useful tool for package level failure analysis labs. The paper proposes one set of solutions for enabling effective TDR analysis (e.g., TDR test fixturing), and discusses some TDR methodologies for detecting and locating anomalies. The methodologies will be illustrated using three example cases that reflect some commonly used packaging technologies: Flip-Chip Organic Land Grid Array (FC-OLGA), Flip-Chip Pin Grid Array (FC-PGA), and Plastic Land Grid Array (PLGA).

Flip-Chip Bump Interface Failure Mechanisms In Plastic BGA Packages and Failure Analysis Process Flow

2008 ◽  
Author(s):  
Zhaofeng Wang
Keyword(s):  
Failure Analysis ◽  
Flip Chip ◽  
Failure Mechanisms ◽  
Integrity Test ◽  
Forming Process ◽  
Interface Failure ◽  
Process Flow ◽  
Analysis Process ◽  
Bga Packages ◽  
Intermittent Contact

Abstract The present paper studies several failure mechanisms at both UBM and Cu substrate side for flip-chip die open contact failures in multi-chip-module plastic BGA-LGA packages. A unique failure analysis process flow, starting from non-disturbance inspection of x-ray, substrate and die level C-SAM, bump x-section followed by a bump interface integrity test including under-fill etching and bump pull test and/or substrate etch has been developed. Four different types of failure mechanism in multiple chip module that are associated with open/intermittent contact, ranging from device layout design, UBM forming process defect, to assembly related bump-substrate interface delamination have been identified. The established FA process has been proved to be efficient and accurate with repeatable result. It has facilitated and accelarated new product qualification processes for a line of high power MCM modules.

Failure Analysis of Flip Chip C4 Package Using Focused Ion Beam Milling Technique

2011 ◽  
Author(s):  
Lihong Cao ◽  
Loc Tran ◽  
Wallace Donna
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Cross Sections ◽  
Flip Chip ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Failure Mechanisms ◽  
Organic Substrate ◽  
Dual Beam ◽  
Preparation Techniques

Abstract This article describes how Focused Ion Beam (FIB) milling methodology enhances the capability of package-level failure analysis on flip-chip packages by eliminating the artifacts induced by using conventional mechanical techniques. Dual- Beam Focused Ion Beam (DB FIB) cross sections were successful in detecting failure mechanisms related either to the die/C4 bump or package defect inside the organic substrate. This paper outlines detailed sample preparation techniques prior to performing the DB FIB cross-sections, along with case studies of DB FIB cross-sections.

Qualification of SiP Products: Quasi-Static Cyclic Mechanical Bending

2007 ◽  
Author(s):  
D. Farley ◽  
Y. Zhou ◽  
A. Dasgupta ◽  
J. F. J. Caers ◽  
J. W. C. de Vries
Keyword(s):  
Solder Joint ◽  
Failure Analysis ◽  
Failure Mode ◽  
Stress Testing ◽  
Flip Chip ◽  
Failure Mechanisms ◽  
Physics Of Failure ◽  
Static Mechanical ◽  
Mechanical Bending ◽  
Solder Joint Fatigue

An LGA (Land Grid Array) laminate-based epoxy-molded RF SiP (system-in-package) containing four wirebonded and three flip-chip dice is qualified for quasi-static mechanical flexure using a PoF (Physics-of-Failure) approach. The process includes: design and execution of accelerated stress testing; failure analysis to identify the failure mode and mechanism; and mechanistic simulations to assess acceleration factors for extrapolation of the failures to field environments for selected failure mechanisms. Illustrative qualification results are presented for solder joint fatigue.

scholarly journals Infra-Red Emission from Classical Novae

1990 ◽  
Vol 122 ◽  
pp. 290-292
Author(s):  
Jim MacDonald
Keyword(s):  
Flux Distribution ◽  
Line Emission ◽  
X Ray ◽  
Classical Novae ◽  
Classical Nova ◽  
Infra Red ◽  
Structure Line ◽  
Ir Emission ◽  
Nova Outburst ◽  
Peak Emission

During the evolution of a classical nova outburst, there are four times at which a significant infra-red (IR) flux is expected. The first Isothermal Dust Phase has been observed in a number of novae and analyses of this phase give valuable information on the properties of the emitting dust. In order of time from visual maximum, the three later phases are due to IR emission from X-ray heated grains, fine-structure line emission from a cold phase of the nova nebula, and grain cooling from shocked gas at the interface between the nova ejecta and the interstellar medium. In the next sections, theoretical estimates of the peak IR luminosity, flux distribution and time of peak emission for each of these phases are discussed.

Case Studies on Application of 3D Real Time X-ray for Flip Chip C4 Package

2014 ◽  
Author(s):  
Lihong Cao ◽  
Wallace Donna ◽  
Loc Tran ◽  
Lynda Tuttle
Keyword(s):  
Failure Analysis ◽  
Real Time ◽  
Case Studies ◽  
Flip Chip ◽  
X Ray

Abstract This article describes how 3D Real Time X-Ray (RTX) technique enhances the capability of package-level failure analysis of a flip-chip package. 3D RTX was successful in detecting different failure signatures. This paper outlines detailed applications of 3D RTX with case studies.

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