Probeless FA Approach: A Breakthrough Simulation Based Failure Analysis Method

2002 ◽  
Author(s):  
ChoonHou Lock ◽  
YikChoong Wong ◽  
KahHee Siek
Keyword(s):  
Failure Analysis ◽  
Success Rate ◽  
Analysis Time ◽  
Analysis Method ◽  
Signal Value ◽  
Simulation Based ◽  
Defect Localization ◽  
Internal Signal

Abstract A breakthrough approach was developed in which failure analysis (FA) of advanced microprocessor was carried out without the use of defect localization equipment. This technique enables the reading of internal signal value without the use of any physical probing method. This method demonstrates the same FA capability with higher success rate and shorter analysis time.

Product Debug: Speed Problem Related to Unexpected RC Delay

2010 ◽  
Author(s):  
J.G. van Hassel ◽  
F. Zachariasse
Keyword(s):  
Failure Analysis ◽  
Failure Mechanisms ◽  
Audio Signal ◽  
New Product ◽  
Analysis Method ◽  
Standard Analysis ◽  
Time Resolved ◽  
Defect Localization ◽  
Rc Delay ◽  
Comprehensive Study

Abstract In new product designs increasing effort is needed to observe and prove failure mechanisms or process marginalities. For advanced failure analysis Soft Defect Localization (SDL) [1] and Time Resolved Emission (TRE) [2,3] have now become a standard analysis method. Both techniques require a close co-operation between designers and analysts. In this paper we will discuss a comprehensive study to find the mechanism behind a speed problem in the digital part of an audio signal processor. The additional delay was related to unwanted routing through poly-silicide in timing critical circuitry.

3-D Defect Localization by Measurement and Modeling of the Dynamics of Heat Transport in Deep Sub-Micron Devices

2007 ◽  
Author(s):  
A. Reverdy ◽  
M. de la Bardonnie ◽  
L.F.Tz. Kwakman ◽  
M. Lamy ◽  
C. Wyon ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Success Rate ◽  
Heat Transport ◽  
Fault Isolation ◽  
Isolation Method ◽  
Signal Phase ◽  
Resistance Change ◽  
Time Constants ◽  
Measurement Results ◽  
Defect Localization

Abstract Due to relentless down scaling of device geometries, failure analysis is getting more and more complex. As a matter of fact, the success rate of Thermal Laser Stimulation (TLS) techniques drops significantly for 90/65 nm CMOS devices because of the lack of x, y and z accuracy. In our aim to improve the TLS based fault isolation method, we have studied thermal time-constant signatures using a Modulated Optical Beam Induced Resistance Change (MOBIRCH) technique that may provide accurate x and y submicron resolution as well as depth or z-information of defects in the interconnection part of devices. Both Modeling and measurement results indicate that OBIRCH signal phase shifts and heat-up & cool-down time constants indeed do correlate with the location, dimensions and density of the structures studied.

Accurate Defect Localization of Stacked Die Devices by Lock-in Thermography

2018 ◽  
Author(s):  
Ke-Ying Lin ◽  
Chih-Yi Tang ◽  
Yu Chi Wang
Keyword(s):  
Failure Analysis ◽  
Defect Modes ◽  
Defect Localization ◽  
Lock In

Abstract The paper demonstrates the moving of lock-in thermography (LIT) spot location by adjusting the lock-in frequency from low to high. Accurate defect localization in stacked-die devices was decided by the fixed LIT spot location after the lock-in frequency was higher than a specific value depending on the depth of the defect in the IC. Physical failure analysis was performed based on LIT results, which provided clear physical defect modes of the stacked-die devices.

Test Circuit Conditioning for Soft Defect Localization

2014 ◽  
Author(s):  
Kristopher D. Staller ◽  
Corey Goodrich
Keyword(s):  
Laser Beam ◽  
Failure Analysis ◽  
Signal Frequency ◽  
Dynamic Failure ◽  
The Third ◽  
Analysis Technique ◽  
Test Circuit ◽  
Defect Localization ◽  
Manual Input ◽  
Fast Dynamic

Abstract Soft Defect Localization (SDL) is a dynamic laser-based failure analysis technique that can detect circuit upsets (or cause a malfunctioning circuit to recover) by generation of localized heat or photons from a rastered laser beam. SDL is the third and seldom used method on the LSM tool. Most failure analysis LSM sessions use the endo-thermic mode (TIVA, XIVA, OBIRCH), followed by the photo-injection mode (LIVA) to isolate most of their failures. SDL is seldom used or attempted, unless there is a unique and obvious failure mode that can benefit from the application. Many failure analysts, with a creative approach to the analysis, can employ SDL. They will benefit by rapidly finding the location of the failure mechanism and forgoing weeks of nodal probing and isolation. This paper will cover circuit signal conditioning to allow for fast dynamic failure isolation using an LSM for laser stimulation. Discussions of several cases will demonstrate how the laser can be employed for triggering across a pass/fail boundary as defined by voltage levels, supply currents, signal frequency, or digital flags. A technique for manual input of the LSM trigger is also discussed.

Application of AFP in Resolving Systematic Issue in Wafer Fabrication

2013 ◽  
Author(s):  
Hui Peng Ng ◽  
Ghim Boon Ang ◽  
Chang Qing Chen ◽  
Alfred Quah ◽  
Angela Teo ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Failure Mechanisms ◽  
Critical Role ◽  
Electrical Characterization ◽  
Process Technology ◽  
Atomic Force ◽  
Defect Localization ◽  
Non Volatile Memory ◽  
Visual Failure

Abstract With the evolution of advanced process technology, failure analysis is becoming much more challenging and difficult particularly with an increase in more erratic defect types arising from non-visual failure mechanisms. Conventional FA techniques work well in failure analysis on defectively related issue. However, for soft defect localization such as S/D leakage or short due to design related, it may not be simple to identify it. AFP and its applications have been successfully engaged to overcome such shortcoming, In this paper, two case studies on systematic issues due to soft failures were discussed to illustrate the AFP critical role in current failure analysis field on these areas. In other words, these two case studies will demonstrate how Atomic Force Probing combined with Scanning Capacitance Microscopy were used to characterize failing transistors in non-volatile memory, identify possible failure mechanisms and enable device/ process engineers to make adjustment on process based on the electrical characterization result. [1]

Failure Analysis of Functional Failures in a Designed for FA SRAM

2004 ◽  
Author(s):  
Gil Garteiz
Keyword(s):  
Failure Analysis ◽  
Success Rate ◽  
Physical Analysis ◽  
Analysis Methodology

Abstract Designing devices for failure analisys (FA) is becoming increasingly critical as structure geometries and killer defects rapidly decrease in size. Naturally, devices that are designed for FA are much easier to analyze and have a higher FA success rate than those that are not. Several analyses of functional failures in a 0.18um CMOS SRAM are presented in this paper to demonstrate “Design For FA” usefulness and application. Physical analysis methodology is also discussed.

scholarly journals Possibilities of realization of the failure analysis method for machines

2001 ◽  
Vol 49 (4-5) ◽  
pp. 412-423
Author(s):  
Petar Gardijan
Keyword(s):  
Failure Analysis ◽  
Analysis Method

scholarly journals A failure analysis method for designing highly reliable product-service systems

2017 ◽  
Vol 29 (2) ◽  
pp. 143-160 ◽  
Author(s):  
Koji Kimita ◽  
Tomohiko Sakao ◽  
Yoshiki Shimomura
Keyword(s):  
Failure Analysis ◽  
Service Systems ◽  
Analysis Method ◽  
Product Service ◽  
Product Service Systems
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