Accurate Defect Localization of Stacked Die Devices by Lock-in Thermography
Abstract The paper demonstrates the moving of lock-in thermography (LIT) spot location by adjusting the lock-in frequency from low to high. Accurate defect localization in stacked-die devices was decided by the fixed LIT spot location after the lock-in frequency was higher than a specific value depending on the depth of the defect in the IC. Physical failure analysis was performed based on LIT results, which provided clear physical defect modes of the stacked-die devices.
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2012 ◽
Vol 177
(15)
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pp. 1261-1267
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2015 ◽
Vol 28
(2)
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pp. 205-212
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