Fault Isolation of Soft P-N Junction Break Down Due to Plasma Charging

2007 ◽  
Author(s):  
Dat Nguyen ◽  
Taras Dudar
Keyword(s):  
Fault Isolation ◽  
Fabrication Process ◽  
Differential Amplifier ◽  
Wafer Fabrication ◽  
Cause Analysis ◽  
Mixed Signal ◽  
The Real ◽  
Root Cause ◽  
Analysis Design ◽  
P Type

Abstract The P-N junctions are part of the construction of semiconductor devices. They are formed by the combination of P-type and N-type diffusions. This paper discusses a soft (small early conduction) P-N junction breakdown. The P-N junction in this work is a part of a differential amplifier, which is widely used in analog/mixed signal devices. The paper outlines the test techniques to detect the differential amplifier failure, the circuit analysis (design and simulation), the fault isolation, and the root cause analysis with data from the wafer fabrication process to support plasma charging on the emitter. The real physical defect was not observable. However, with the help of lab data, the failure can be explained as plasma charging.

Root Cause Analysis of High Input Offset Voltage in Mixed-Signal Design Through Nanoprobing and Cadence Simulation

2019 ◽  
Author(s):  
Zhenni Wan ◽  
Weikai Yin ◽  
Yining Zang ◽  
Madhukar Karigerasi ◽  
Saurabh Kulkarni ◽  
...  
Keyword(s):  
Failure Modes ◽  
Root Cause Analysis ◽  
Fault Isolation ◽  
The Body ◽  
Cause Analysis ◽  
Mixed Signal ◽  
Root Cause ◽  
Offset Voltage ◽  
Amplifier Gain ◽  
Mixed Signal Ic

Abstract Root cause analysis of parametric failures in mixed-signal IC designs has been a challenging topic due to the marginality of failure modes. This work presents two case studies of offset voltage (Vos) failures which are commonly seen in mixed-signal IC designs. Nanoprobing combined with Cadence simulation becomes a powerful methodology in fault isolation. Large Vos is typically caused by the mismatch of electrical properties of the components on two balanced rails. In our first case, we present a case-study of nanoprobing combined with bench test and Cadence simulation to debug the root cause of a class-D amplifier voltage offset related yield loss from mixedsignal design sensitivity. Bench electrical measurements confirm the dependency of offset voltage (Vos) on boost voltage (VBST) and amplifier gain settings, which isolates the root cause from mismatch in amplifier gain resistors. The bench measurements match extremely well when an extra parasitic resistance is added to the input of the amplifier in the Cadence simulation. Kelvin 4 points nanoprobing on the amplifier input matching resistors confirmed a 40% mismatch as a result of both layout sensitivity and fabrication. This case highlights that the role of nanoprobing combined with Cadence simulation is not only valuable in physical failure root cause analysis but also in providing guidance to a potential process fix for current and future designs. In our second case, a decrease in offset voltage (Vos) is found through bench validation by reducing the supply voltage (VDD), suggesting a new mismatch mechanism related to the body-source bias. Nanoprobing of the input PMOS transistors clearly shows humps in the subthreshold region of IV characteristics, and the severity of humps increases with body-source bias. Vos derived from the nanoprobing results aligns well with the bench data, suggesting hump effect to be the root cause of Vos deviation. This study suggests that by combining Cadence simulation and nanoprobing in the failure analysis process of parametric failures, suspicious problematic devices can be identified more easily, greatly reducing the need for trial and error.

A New Failure Analysis Flow of Gate Oxide Integrity Failure in Wafer Fabrication

2009 ◽  
Author(s):  
Hua Younan ◽  
Chu Susan ◽  
Gui Dong ◽  
Mo Zhiqiang ◽  
Xing Zhenxiang ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Gate Dielectric ◽  
Dielectric Breakdown ◽  
Defect Density ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Fault Isolation ◽  
Wafer Fabrication ◽  
Root Cause ◽  
Gate Oxide Integrity

Abstract As device feature size continues to shrink, the reducing gate oxide thickness puts more stringent requirements on gate dielectric quality in terms of defect density and contamination concentration. As a result, analyzing gate oxide integrity and dielectric breakdown failures during wafer fabrication becomes more difficult. Using a traditional FA flow and methods some defects were observed after electrical fault isolation using emission microscopic tools such as EMMI and TIVA. Even with some success with conventional FA the root cause was unclear. In this paper, we will propose an analysis flow for GOI failures to improve FA’s success rate. In this new proposed flow both a chemical method, Wright Etch, and SIMS analysis techniques are employed to identify root cause of the GOI failures after EFA fault isolation. In general, the shape of the defect might provide information as to the root cause of the GOI failure, whether related to PID or contamination. However, Wright Etch results are inadequate to answer the questions of whether the failure is caused by contamination or not. If there is a contaminate another technique is required to determine what the contaminant is and where it comes from. If the failure is confirmed to be due to contamination, SIMS is used to further determine the contamination source at the ppm-ppb level. In this paper, a real case of GOI failure will be discussed and presented. Using the new failure analysis flow, the root cause was identified to be iron contamination introduced from a worn out part made of stainless steel.

Root Cause Analysis Techniques Using Picosecond Time Resolved LADA

2014 ◽  
Author(s):  
Dan Bodoh ◽  
Kent Erington ◽  
Kris Dickson ◽  
George Lange ◽  
Carey Wu ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Picosecond Laser ◽  
Root Cause Analysis ◽  
Fault Isolation ◽  
Time Resolved ◽  
Cause Analysis ◽  
Root Cause ◽  
Design And Manufacturing ◽  
Multiple Interactions ◽  
Established Technique

Abstract Laser-assisted device alteration (LADA) is an established technique used to identify critical speed paths in integrated circuits. LADA can reveal the physical location of a speed path, but not the timing of the speed path. This paper describes the root cause analysis benefits of 1064nm time resolved LADA (TR-LADA) with a picosecond laser. It shows several examples of how picosecond TR-LADA has complemented the existing fault isolation toolset and has allowed for quicker resolution of design and manufacturing issues. The paper explains how TR-LADA increases the LADA localization resolution by eliminating the well interaction, provides the timing of the event detected by LADA, indicates the propagation direction of the critical signals detected by LADA, allows the analyst to infer the logic values of the critical signals, and separates multiple interactions occurring at the same site for better understanding of the critical signals.

scholarly journals Root Cause Analysis Design and Its Application to Pharmacy Education

2015 ◽  
Vol 79 (7) ◽  
pp. 99 ◽  
Author(s):  
Mark T. Holdsworth ◽  
Rucha Bond ◽  
Saumeel Parikh ◽  
Bahie Yacop ◽  
Kristina M. Wittstrom
Keyword(s):  
Root Cause Analysis ◽  
Pharmacy Education ◽  
Cause Analysis ◽  
Root Cause ◽  
Analysis Design

Challenges of System Level Failure Analysis of Electronics in the Automotive Industry

2017 ◽  
Author(s):  
Bence Hevesi
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Automotive Industry ◽  
Root Cause Analysis ◽  
Fault Isolation ◽  
System Level ◽  
Cause Analysis ◽  
Root Cause ◽  
Analysis Workflow

Abstract In this paper, different failure analysis (FA) workflows are showed which combines different FA approaches for fast and efficient fault isolation and root cause analysis in system level products. Two case studies will be presented to show the importance of a well-adjusted failure analysis workflow.

MEMS Failure Analysis In Wafer Fabrication

2016 ◽  
Author(s):  
Hui Peng Ng ◽  
Angela Teo ◽  
Ghim Boon Ang ◽  
Alfred Quah ◽  
N. Dayanand ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Data Interpretation ◽  
Fault Isolation ◽  
Wafer Fabrication ◽  
Auger Analysis ◽  
Root Cause ◽  
Defect Site ◽  
Defect Localization ◽  
Cmos Chip

Abstract This paper discussed on how the importance of failure analysis to identify the root cause and mechanism that resulted in the MEMS failure. The defect seen was either directly on the MEMS caps or the CMOS integrated chip in wafer fabrication. Two case studies were highlighted in the discussion to demonstrate how the FA procedures that the analysts had adopted in order to narrow down to the defect site successfully on MEMS cap as well as on CMOS chip on MEMS package units. Besides the use of electrical fault isolation tool/technique such as TIVA for defect localization, a new physical deprocessing approach based on the cutting method was performed on the MEMS package unit in order to separate the MEMS from the Si Cap. This approach would definitely help to prevent the introduction of particles and artifacts during the PFA that could mislead the FA analyst into wrong data interpretation. Other FA tool such as SEM inspection to observe the physical defect and Auger analysis to identify the elements in the defect during the course of analysis were also documented in this paper.

Copper Bond Over Active Circuit (BOAC) and Copper Over Anything (COA) Failure Analysis

2003 ◽  
Author(s):  
Dat Nguyen ◽  
Bob Davis ◽  
Corey Lewis
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Fault Isolation ◽  
Circuit Boards ◽  
Electronic Industry ◽  
Cause Analysis ◽  
Defect Identification ◽  
Root Cause ◽  
Active Circuit ◽  
Selective Analysis

Abstract In today's electronic industry of shrinking circuit boards and shrinking semiconductor integrated circuits (IC), semiconductor companies have to be creative in providing devices with more circuitry on less silicon. Copper Bond over Active Circuit (BOAC)/Copper over Anything (COA) processes allow routing and bonding to thick top level metallization on the LinBiCMOS technology node. This paper discusses failure analysis (FA) techniques and approaches on un-passivated BOAC, and explains a generic BOAC/COA process. The approach to FA of BOAC involves package inspection-non intrusive analysis, decapsulation, die inspection, and defect identification/root cause analysis. Case studies are presented to explain the specific FA steps. Fault isolation involving BOAC requires the strategic removal of copper traces and selective analysis of the failed circuitry. Liquid crystal and micro-probing have been used effectively in failure isolation.

Defect Localization and Root Cause Analysis on e-Fuse Read Reliability Failure

2014 ◽  
Author(s):  
Hung Chin Chen ◽  
Chih Yang Tsai ◽  
Shih Yuan Liu ◽  
Yu Pang Chang ◽  
Jian Chang Lin
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Metal Layer ◽  
Ion Beam ◽  
Fault Isolation ◽  
Resistance Change ◽  
Cause Analysis ◽  
Root Cause ◽  
Failure Location ◽  
Rate Of Failure

Abstract Fault isolation is the most important step for Failure Analysis (FA), and it is closely linked with the success rate of failure mechanism finding. In this paper, we will introduce a case that hard to debug with traditional FA skills. In order to find out its root cause, several advanced techniques such as layout tracing, circuit edit and Infrared Ray–Optical Beam Induced Resistance Change (IR-OBIRCH) analysis had been applied. The circuit edit was performed following layout tracing for depositing probing pads by Focused Ion Beam (FIB). Then, IR-OBIRCH analysis with biasing on the two FIB deposited probing pads and a failure location was detected. Finally, the root cause of inter- metal layer bridge was found in subsequent physical failure analysis.

Sign in / Sign up

Export Citation Format

Share Document