Poly Undercut Induced Device Asymmetric Failure

2016 ◽  
Author(s):  
Wen Hui Wang ◽  
Mei Chuang Lin ◽  
Shiuan Wen Huang
Keyword(s):  
High Resistance ◽  
Failure Mechanisms ◽  
Failure Type ◽  
Root Cause ◽  
Defect Location ◽  
Soft Failure ◽  
Current Feature ◽  
Current Difference

Abstract Device asymmetric current is a common soft failure type in real nano-probing cases. Generally speaking, it is not easy to find out the root cause. LDD shadowing, Poly depletion are well known failure mechanisms causing asymmetric current due to an equivalent high resistance at defect location. Based on the defect serious condition, even some hard defect like channel AA pitting will show the similar I-V feature with previous 2 soft fail cases. This paper will introduce another type of asymmetric current feature – poly bottom undercut which I-V curve still keeps ideal linear and saturation area, but the asymmetric current difference is obvious.

Root Cause Analyses of Metal Bridging for Copper Damascene Process

2005 ◽  
Author(s):  
Z. G. Song ◽  
S. P. Neo ◽  
S. K. Loh ◽  
C. K. Oh
Keyword(s):  
Failure Mechanisms ◽  
Copper Corrosion ◽  
Microelectronic Device ◽  
Root Cause ◽  
Damascene Process ◽  
New Process ◽  
Copper Cmp

Abstract New process will introduce new failure mechanisms during microelectronic device manufacturing. Even if the same defect, its root causes can be different for different processes. For aluminum(Al)-tungsten(W) metallization, the root cause of metal bridging is quite simple and mostly it is blocked etch or under-etch. But, for copper damascene process, the root causes of metal bridging are complicated. This paper has discussed the various root causes of metal bridging for copper damascene process, such as those related to litho-etch issue, copper CMP issue, copper corrosion issue and so on.

Soft Failure Mechanisms and PCB Design Measures

2016 ◽  
pp. 169-233
Author(s):  
David Pommerenke ◽  
Pratik Maheshwari
Keyword(s):  
Failure Mechanisms ◽  
Soft Failure ◽  
Pcb Design

Strategies to Address Low DPPM Failure Mechanisms on Automotive Grade Wi-Fi Radio Frequency Devices

2015 ◽  
Author(s):  
Kai Wang ◽  
Sadia Lone ◽  
Colin Thomas ◽  
Rhys Weaver
Keyword(s):  
Failure Analysis ◽  
Continuous Improvement ◽  
Failure Mechanisms ◽  
Time Frame ◽  
Cause Analysis ◽  
Automotive Market ◽  
Root Cause ◽  
Rigorous Testing ◽  
Additional Demand

Abstract System suppliers in the automotive market have an expectation that their IC suppliers provide products with low defective parts per million (DPPM) and have methodologies in place to drive towards 0ppm (Zero Parts Per Million). IC suppliers to the automotive market have supply chains and test methodologies in place to achieve such low DPPMs, but the systems suppliers will still require root cause analysis on every failure. The IC supplier is expected to demonstrate a containment, corrective action and continuous improvement in a very tight time frame. This additional demand of automotive customers poses a challenge to the quality of IC devices and the concept of cross departmental failure analysis. In this paper, we look at a complex Wi-Fi design with multiple IEEE specific radios, and how to address the few parts that escape the rigorous testing by IC supplier to improve the quality for the automotive IC.

An Application of Breakthrough Failure Analysis Techniques in Eliminating Silicon Dislocation Problem in Sub-Micron CMOS Devices

1997 ◽  
Author(s):  
E. H. Yeoh ◽  
W. M. Mak ◽  
H. C. Lock ◽  
S. K. Sim ◽  
C. C. Ooi ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Packing Density ◽  
Failure Mechanisms ◽  
Potential Solution ◽  
Critical Dimensions ◽  
Functional Failure ◽  
Analysis Techniques ◽  
Root Cause ◽  
First Time

Abstract As device interconnect layers increase and transistor critical dimensions decrease below sub-micron to cater for higher speed and higher packing density, various new and subtle failure mechanisms have emerged and are becoming increasingly prevalent. Silicon dislocation is a new failure mechanism that falls in this category and was for the first time, uncovered in submicron multilayered CMOS devices. This mechanism was responsible for a systematic yield problem; identified as the 'centre GFA wafer' functional failure problem. In this paper, several breakthrough failure analysis techniques used to narrow down and identify this new mechanism will be presented. Root cause determination and potential solution to this problem will also be discussed.

A Study of SRAM Device Soft Failures Caused by Contact Volcano Defects Using Nanoprobing Analysis

2011 ◽  
Author(s):  
Yu Hsiang Shu ◽  
Vincent Huang ◽  
Chia Hsing Chao
Keyword(s):  
Failure Analysis ◽  
High Resistance ◽  
Ion Beam ◽  
Analysis Method ◽  
Root Cause ◽  
Parametric Data ◽  
Transmission Electron ◽  
Focus Ion Beam ◽  
Electrical Data

Abstract Using nanoprobing techniques to accomplish transistor parametric data has been reported as a method of failure analysis in nanometer scale defect. In this paper, we focus on how to identify the influence of Contact high resistance on device soft failures using nanoprobing analysis, and showing that the equivalent mathematical models could be used to describe the corresponding electrical data in a device with Contact high resistance issue. A case study was presented to verify that Contact volcano defect caused Contact high resistance issue, and this issue can be identified via physical failure analysis (PFA) method (e.g. Transmission Electron Microscope and Focus Ion Beam techniques) and nanoprobing analysis method. Finally, we would explain the physical root cause of Contact volcano issue.

scholarly journals Failure investigation as a route to improving integrity of titanium alloys in service

2020 ◽  
Vol 321 ◽  
pp. 04007
Author(s):  
C. Collins ◽  
F.F. Dear ◽  
D. Rugg ◽  
D. Dye
Keyword(s):  
Titanium Alloy ◽  
Titanium Alloys ◽  
Feedback Loop ◽  
State Of The Art ◽  
Failure Mechanisms ◽  
Damage And Failure ◽  
Root Cause ◽  
Aerospace Applications ◽  
Failure Investigation ◽  
Comprehensive Framework

Increasing demands on titanium alloys in aerospace applications have driven a push towards deeper understanding of their behaviour in service. This extends from component performance during planned operation to damage mechanisms and how parts may ultimately fail. Investigation of damage and failure requires a comprehensive framework of techniques in order to identify a root cause, and further the understanding of failure mechanisms. It is crucial to defining and improving component lifetimes via a design optimisation feedback loop. This paper presents an overview of the techniques used in state-of-the-art industrial titanium alloy failure investigation, highlighting the inherent reciprocal links to frontline research and the need for constant innovation.

Identification of Soft Failure Mechanisms Triggered by ESD Stress on a Powered USB 3.0 Interface

2019 ◽  
Vol 61 (1) ◽  
pp. 20-28 ◽  
Author(s):  
Sebastian Koch ◽  
Benjamin J. Orr ◽  
Harald Gossner ◽  
Horst A. Gieser ◽  
Linus Maurer
Keyword(s):  
Failure Mechanisms ◽  
Soft Failure

Investigation of Passivation Damage from the Backside

2005 ◽  
Author(s):  
Sam Subramanian ◽  
Ed Widener ◽  
Tony Chrastecky ◽  
Darryl Jones ◽  
Bill W. Jones ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Failure Mode ◽  
Cross Section ◽  
Packaging Process ◽  
Root Cause ◽  
Defect Location ◽  
Optical Inspection ◽  
Transmission Electron ◽  
Section Sample

Abstract Passivation damage, a common failure mode in microelectronics circuitry, can be easily identified by optical inspection in the form of a local 'discoloration' after exposing the die to a chemical that would penetrate through the crack and attacks metal lines. Unfortunately, this process destroys evidence of what damaged the passivation, since it attacks the damaged region. As a result, in many cases, the mechanism by which the passivation damage occurred is unclear. This problem is addressed in this paper by a procedure to examine passivation damage by transmission electron microscopy (TEM) of a cross-section sample prepared from the backside and without exposing the die from the top side. The backside approach was successfully used to assign the root cause of the passivation damage to packaging process. A topside approach to characterize the passivation damaged region can result in destruction of evidence at the defect location.

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