EBIC and EBAC Analysis of Site Specific STEM Samples

2017 ◽  
Author(s):  
C.T. Schamp ◽  
Y. Suzuki ◽  
J. Fuse ◽  
K. Ito ◽  
H. Tanaka ◽  
...  
Keyword(s):  
Electron Beam ◽  
Dark Field ◽  
Primary Electron ◽  
X Rays ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Beam Sample ◽  
Probe Size ◽  
Electron Beam Induced Current ◽  
Electron Energy Loss

Abstract In transmission electron microscopy (TEM), one typically considers bright-field or dark-field imaging signals, which utilize the transmitted and scattered electrons, respectively. Analytical signals such as characteristic X-Rays or primary electron beam energy losses from inelastic scattering events give rise to the energy dispersive X-Ray spectroscopy and electron energy loss spectroscopy techniques, respectively. In this paper, the detection of the electron beam absorbed current (EBAC) and electron beam induced current (EBIC) signals is reported using a specially designed scanning TEM holder and associated amplification electronics. By utilizing thin TEM samples where the beam-sample interaction volume is controlled more through the incident electron probe size, the EBAC and EBIC signal resolution is improved to the point where implant regions and Schottky junction depletion zones can be visualized.

3d Reconstruction of Sub-Nm Beam Profiles in STEM

2001 ◽  
Vol 7 (S2) ◽  
pp. 344-345
Author(s):  
G. Möbus ◽  
R.E. Dunin-Borkowski ◽  
C.J.D. Hethėrington ◽  
J.L. Hutchison
Keyword(s):  
Electron Beam ◽  
Chemical Analysis ◽  
Energy Loss ◽  
Intensity Distribution ◽  
Dark Field ◽  
Beam Forming ◽  
Dark Field Imaging ◽  
Annular Dark Field ◽  
Electron Energy Loss ◽  
Field Imaging

Introduction:Atomically resolved chemical analysis using techniques such as electron energy loss spectroscopy and annular dark field imaging relies on the ability to form a well-characterised sub-nm electron beam in a FEGTEM/STEM [1-2]. to understand EELS+EDX-signal formation upon propagation of a sub-nm beam through materials we first have to assess precisely the beam intensity distribution in vacuum and find conditions for the best obtainable resolution.Experimental Details:Modern TEM/STEM instruments combine features of both imaging and scanning technology. The beam forming capability approaches closely that for dedicated STEMs, while CCD recording devices allow us to measure the beam profile by direct imaging at magnifications up to 1.5 M. The recording of a “z-section” series through the 3D intensity distribution of the cross-over can therefore be realised by recording of a “condenser focal series”.

Structure and Chemistry across Interfaces at Nanoscale of a Ge Quantum Well Embedded within Rare Earth Oxide Layers

2011 ◽  
Vol 17 (5) ◽  
pp. 759-765 ◽  
Author(s):  
Tanmay Das ◽  
Somnath Bhattacharyya
Keyword(s):  
Rare Earth ◽  
Solid Phase ◽  
Rare Earth Oxide ◽  
Dark Field ◽  
X Ray ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Annular Dark Field ◽  
Electron Energy Loss ◽  
Field Imaging

AbstractStructure and chemistry across the rare earth oxide-Ge interfaces of a Gd2O3-Ge-Gd2O3 heterostructure grown on p-Si (111) substrate using encapsulated solid phase epitaxy method have been studied at nanoscale using various transmission electron microscopy methods. The structure across both the interfaces was investigated using reconstructed phase and amplitude at exit plane. Chemistry across the interfaces was explored using elemental mapping, high-angle annular dark-field imaging, electron energy loss spectroscopy, and energy dispersive X-ray spectrometry. Results demonstrate the structural and chemical abruptness of both the interfaces, which is most essential to maintain the desired quantum barrier structure.

TEM Investigation of Nanophase Aluminum Powder

2005 ◽  
Vol 11 (5) ◽  
pp. 410-420 ◽  
Author(s):  
Valéry Y. Gertsman ◽  
Queenie S.M. Kwok
Keyword(s):  
Aluminum Powder ◽  
Dark Field ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Partial Crystallinity ◽  
Large Clusters ◽  
Electron Energy Loss ◽  
Field Imaging ◽  
Good Agreement

Nanophase aluminum powder was characterized in a field-emission-gun transmission electron microscope (TEM). Different techniques were used to investigate the structure of the particles, including conventional bright-field and dark-field imaging, scanning transmission electron microscopy (STEM), high-resolution lattice imaging, diffraction studies, energy dispersive X-ray spectroscopy (EDS) analysis and mapping, and electron energy loss spectroscopy (EELS) analysis and mapping. It has been established that the particle cores consist of aluminum single crystals that sometimes contain crystal lattice defects. The core is covered by a passivating layer of aluminum oxide a few nanometers thick. The alumina is mostly amorphous, but evidences of partial crystallinity of the oxide were also found. The thickness of this layer was measured using different techniques, and the results are in good agreement with each other. The particles are agglomerated in two distinct ways. Some particles were apparently bonded together during processing before oxidation. These mostly form dumbbells covered by a joint oxide layer. Also, oxidized particles are loosely assembled into relatively large clusters.

Grain Boundaries in Multicrystalline Si

2009 ◽  
Vol 156-158 ◽  
pp. 19-26 ◽  
Author(s):  
Jun Chen ◽  
Bin Chen ◽  
Woong Lee ◽  
Masayuki Fukuzawa ◽  
Masayoshi Yamada ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Electron Beam ◽  
Grain Boundaries ◽  
Dark Field ◽  
Contamination Level ◽  
Induced Current ◽  
Transmission Electron ◽  
Annular Dark Field ◽  
Electron Beam Induced Current ◽  
Fe Impurity

We report the electrical, structural and mechanical properties of grain boundaries (GBs) in multicrystalline Si (mc-Si) based on electron-beam-induced current (EBIC), transmission electron microscope (TEM), and scanning infrared polariscope (SIRP) characterizations. The recombination activities of GBs are clearly classified with respect to GB character and Fe contamination level. The decoration of Fe impurity at boundary has been approved by annular dark field (ADF) imaging in TEM. Finally, the distribution of residual strain around GBs, and the correlations between strain and electrical properties are discussed.

Interlayer mixing in GaAs/AlxGa1-xAs heterostructures as a result of Se+ ion implantation

1988 ◽  
Vol 46 ◽  
pp. 908-909
Author(s):  
E.G. Bithell ◽  
W.M. Stobbs
Keyword(s):  
Ion Implantation ◽  
Diffusion Coefficients ◽  
Dark Field ◽  
Atomic Mass ◽  
Composition Profile ◽  
Semiconductor Heterostructures ◽  
Transmission Electron ◽  
Microscope Images ◽  
Damage Process ◽  
Electron Energy Loss

It is well known that the microstructural consequences of the ion implantation of semiconductor heterostructures can be severe: amorphisation of the damaged region is possible, and layer intermixing can result both from the original damage process and from the enhancement of the diffusion coefficients for the constituents of the original composition profile. A very large number of variables are involved (the atomic mass of the target, the mass and energy of the implant species, the flux and the total dose, the substrate temperature etc.) so that experimental data are needed despite the existence of relatively well developed models for the implantation process. A major difficulty is that conventional techniques (e.g. electron energy loss spectroscopy) have inadequate resolution for the quantification of any changes in the composition profile of fine scale multilayers. However we have demonstrated that the measurement of 002 dark field intensities in transmission electron microscope images of GaAs / AlxGa1_xAs heterostructures can allow the measurement of the local Al / Ga ratio.

Characterization of reactive phase formation in sputter-deposited Ni/Al multilayer thin films using TEM

1996 ◽  
Vol 54 ◽  
pp. 1000-1001
Author(s):  
G. Lucadamo ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Dark Field ◽  
Nickel Layer ◽  
Multilayer Thin Films ◽  
Cross Sectional ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Constant Heating

The subject of reactive phase formation in multilayer thin films of varying periodicity has stimulated much research over the past few years. Recent studies have sought to understand the reactions that occur during the annealing of Ni/Al multilayers. Dark field imaging from transmission electron microscopy (TEM) studies in conjunction with in situ x-ray diffraction measurements, and calorimetry experiments (isothermal and constant heating rate), have yielded new insights into the sequence of phases that occur during annealing and the evolution of their microstructure.In this paper we report on reactive phase formation in sputter-deposited lNi:3Al multilayer thin films with a periodicity A (the combined thickness of an aluminum and nickel layer) from 2.5 to 320 nm. A cross-sectional TEM micrograph of an as-deposited film with a periodicity of 10 nm is shown in figure 1. This image shows diffraction contrast from the Ni grains and occasionally from the Al grains in their respective layers.

Nucleation and initial growth of Pd2Si crystals on Si(111)

1993 ◽  
Vol 51 ◽  
pp. 844-845
Author(s):  
Xianghong Tong ◽  
Oliver Pohland ◽  
J. Murray Gibson
Keyword(s):  
High Vacuum ◽  
Dark Field ◽  
Ultra High Vacuum ◽  
Initial Growth ◽  
Surface And Interface ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Initial Stage ◽  
Effect Of Surface

The nucleation and initial stage of Pd2Si crystals on Si(111) surface is studied in situ using an Ultra-High Vacuum (UHV) Transmission Electron Microscope (TEM). A modified JEOL 200CX TEM is used for the study. The Si(111) sample is prepared by chemical thinning and is cleaned inside the UHV chamber with base pressure of 1x10−9 τ. A Pd film of 20 Å thick is deposited on to the Si(111) sample in situ using a built-in mini evaporator. This room temperature deposited Pd film is thermally annealed subsequently to form Pd2Si crystals. Surface sensitive dark field imaging is used for the study to reveal the effect of surface and interface steps.The initial growth of the Pd2Si has three stages: nucleation, growth of the nuclei and coalescence of the nuclei. Our experiments shows that the nucleation of the Pd2Si crystal occurs randomly and almost instantaneously on the terraces upon thermal annealing or electron irradiation.

scholarly journals Surface excitations in the modelling of electron transport for electron-beam-induced deposition experiments

2015 ◽  
Vol 6 ◽  
pp. 1260-1267 ◽  
Author(s):  
Francesc Salvat-Pujol ◽  
Roser Valentí ◽  
Wolfgang S Werner
Keyword(s):  
Electron Beam ◽  
Electron Transport ◽  
Primary Energy ◽  
Primary Electron ◽  
Sizeable Fraction ◽  
The Subject ◽  
Electron Beam Induced Deposition ◽  
The One ◽  
Electron Energy Loss ◽  
General Perspective

The aim of the present overview article is to raise awareness of an essential aspect that is usually not accounted for in the modelling of electron transport for focused-electron-beam-induced deposition (FEBID) of nanostructures: Surface excitations are on the one hand responsible for a sizeable fraction of the intensity in reflection-electron-energy-loss spectra for primary electron energies of up to a few kiloelectronvolts and, on the other hand, they play a key role in the emission of secondary electrons from solids, regardless of the primary energy. In this overview work we present a general perspective of recent works on the subject of surface excitations and on low-energy electron transport, highlighting the most relevant aspects for the modelling of electron transport in FEBID simulations.

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