MILLED MICROMOLDS FOR LARGE AREA ALL-ELASTOMER ''ROBOT SKIN'' WITH 3-AXIS TACTILE SENSING VIA CONTACT RESISTANCE

The flexible transparent electrode of this study used electrospinning and electroless deposition, which is a fabrication method to remove contact resistance at the nanofiber intersection and fabricate large-area electrode.

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Scalable fabrication of hierarchically structured graphite/polydimethylsiloxane composite films for large-area triboelectric nanogenerators and self-powered tactile sensing

Nano Energy ◽

10.1016/j.nanoen.2020.105521 ◽

2021 ◽

Vol 80 ◽

pp. 105521

Author(s):

Qi-Jun Sun ◽

Yanqiang Lei ◽

Xin-Hua Zhao ◽

Jing Han ◽

Ran Cao ◽

...

Keyword(s):

Composite Films ◽

Tactile Sensing ◽

Large Area ◽

Self Powered ◽

Triboelectric Nanogenerators

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Learning torque control in presence of contacts using tactile sensing from robot skin

2015 IEEE-RAS 15th International Conference on Humanoid Robots (Humanoids) ◽

10.1109/humanoids.2015.7363429 ◽

2015 ◽

Cited By ~ 2

Author(s):

Roberto Calandra ◽

Serena Ivaldi ◽

Marc Peter Deisenroth ◽

Peters

Keyword(s):

Torque Control ◽

Tactile Sensing ◽

Robot Skin

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Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates

Beilstein Journal of Nanotechnology ◽

10.3762/bjnano.4.24 ◽

2013 ◽

Vol 4 ◽

pp. 234-242 ◽

Cited By ~ 22

Author(s):

Gabriele Fisichella ◽

Salvatore Di Franco ◽

Patrick Fiorenza ◽

Raffaella Lo Nigro ◽

Fabrizio Roccaforte ◽

...

Keyword(s):

Electrical Properties ◽

Contact Resistance ◽

Sheet Resistance ◽

Flexible Electronics ◽

Structural Integrity ◽

Chemical Vapour ◽

Specific Contact Resistance ◽

Large Area ◽

Conductive Atomic Force Microscopy ◽

Specific Contact

Chemical vapour deposition (CVD) on catalytic metals is one of main approaches for high-quality graphene growth over large areas. However, a subsequent transfer step to an insulating substrate is required in order to use the graphene for electronic applications. This step can severely affect both the structural integrity and the electronic properties of the graphene membrane. In this paper, we investigated the morphological and electrical properties of CVD graphene transferred onto SiO2 and on a polymeric substrate (poly(ethylene-2,6-naphthalene dicarboxylate), briefly PEN), suitable for microelectronics and flexible electronics applications, respectively. The electrical properties (sheet resistance, mobility, carrier density) of the transferred graphene as well as the specific contact resistance of metal contacts onto graphene were investigated by using properly designed test patterns. While a sheet resistance R sh ≈ 1.7 kΩ/sq and a specific contact resistance ρc ≈ 15 kΩ·μm have been measured for graphene transferred onto SiO2, about 2.3× higher R sh and about 8× higher ρc values were obtained for graphene on PEN. High-resolution current mapping by torsion resonant conductive atomic force microscopy (TRCAFM) provided an insight into the nanoscale mechanisms responsible for the very high ρc in the case of graphene on PEN, showing a ca. 10× smaller “effective” area for current injection than in the case of graphene on SiO2.

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Protective Layers Based on Carbon Paint To Yield High-Quality Large-Area Molecular Junctions with Low Contact Resistance

Journal of the American Chemical Society ◽

10.1021/jacs.9b12424 ◽

2020 ◽

Vol 142 (7) ◽

pp. 3513-3524 ◽

Cited By ~ 6

Author(s):

Senthil Kumar Karuppannan ◽

Esther Hui Lin Neoh ◽

Ayelet Vilan ◽

Christian A. Nijhuis

Keyword(s):

Contact Resistance ◽

Molecular Junctions ◽

Large Area ◽

High Quality ◽

Protective Layers

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High Temperature Characterization Of Ni, W And Al Contacts To 3C-Silicon Carbide Thin Films

MRS Proceedings ◽

10.1557/proc-483-321 ◽

1997 ◽

Vol 483 ◽

Cited By ~ 1

Author(s):

C Jacob ◽

P Pirouz ◽

H-I Kuo ◽

M Mehregany

Keyword(s):

Silicon Carbide ◽

High Temperature ◽

Contact Resistance ◽

Room Temperature ◽

Specific Contact Resistance ◽

Large Area ◽

Fermi Level Pinning ◽

Specific Contact ◽

Current Availability ◽

Sic Films

AbstractWith the current availability of large-area 3C-SiC films, it is imperative that stable high temperature contacts be developed for high power devices. By comparing the existing data in the literature, we demonstrate that the contact behavior on each of the different polytypes of SiC will vary significantly. In particular, we demonstrate this for 6H-SiC and 3C-SiC. The interface slope parameter, S, which is a measure of the Fermi-level pinning in each system varies between 0.4–0.5 on 6H-SiC, while it is 0.6 on 3C-SiC. This implies that the barrier heights of contacts to 3C-SiC will vary more significantly with the choice of metal than for 6H-SiC.Aluminum, nickel and tungsten were deposited on 3C-SiC films and their specific contact resistance measured using the circular TLM method. High temperature measurements (up to 400°C) were performed to determine the behavior of these contacts at operational temperatures. Aluminum was used primarily as a baseline for comparison since it melts at 660°C and cannot be used for very high temperature contacts. The specific contact resistance (ρc) for nickel at room temperature was 5 × 10−4 Ω-cm2, but increased with temperature to a value of 1.5 × 10−3 Ω-cm2 at 400°C. Tungsten had a higher room temperature × 10−3 Ω-cm2, which remained relatively constant with increasing temperature up to 400°C. This is related to the fact that there is hardly any reaction between tungsten and silicon carbide even up to 900°C, whereas nickel almost completely reacts with SiC by that temperature. Contact resistance measurements were also performed on samples that were annealed at 500°C.

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