scholarly journals STUDY OF DIRECT LASER RECORDING OF MICRO-RELIEF ON A TWO-LAYER a-Si/Ag STRUCTURE

2021 ◽  
Vol 8 ◽  
pp. 229-235
Author(s):  
Nurbek Sydyk uulu ◽  
Askar A. Kutanov ◽  
Zamirgul M. Kazakbaeva
Keyword(s):  
Magnetron Sputtering ◽  
Amorphous Silicon ◽  
Semiconductor Laser ◽  
Glass Substrate ◽  
Layer Structure ◽  
Single Mode ◽  
Laser Pulses ◽  
Direct Recording ◽  
Direct Laser ◽  
Si Films

This paper presents the results of direct laser recording on a two-layer amorphous silicon / silver structure deposited on a glass substrate by magnetron sputtering. The absorption spectra of a-Si films of various thicknesses and a glass substrate are investigated. A method is proposed for direct laser recording of microstructures by focused radiation of a single-mode semiconductor laser with a wavelength of λ = 405 nm on a two-layer a-Si / Ag medium from the side of a glass substrate. The formation of the micro relief is studied during direct recording by semiconductor laser pulses with λ = 405 nm on the a-Si layer. Parameters of two-layer structure a-Si / Ag for direct laser recording are optimized.

scholarly journals RELIEF RECORDING SILVER AT DIRECT LASER EXPOSURE ON THE LAYER OF AMORPHOUS SILICON

2019 ◽  
Vol 8 ◽  
pp. 52-56
Author(s):  
Askar Kutanov ◽  
Nurbek Sydyk uluu ◽  
Zamirgul Kazakbaeva
Keyword(s):  
Amorphous Silicon ◽  
Semiconductor Laser ◽  
Glass Substrate ◽  
Silver Film ◽  
Silicon Film ◽  
Single Mode ◽  
Laser Exposure ◽  
Amorphous Silicon Film ◽  
Direct Recording ◽  
Direct Laser

Results of direct laser recording on a two-component medium consisting of deposited layers of amorphous silicon and silver on a glass substrate by magnetron sputtering are presented. A single-mode semiconductor laser with λ = 405 nm for amorphous silicon film on glass substrate with a power of 120 mW is used for direct laser recording on amorphous silicon. Formation of the relief on the silver film with direct recording pulses of a semiconductor laser with λ = 405 nm at the a-Si layer is taken on the electron microscope TESCAN VEGA 3 LMH.

Detection of an ordered-structure fraction in amorphous silicon

2016 ◽  
Vol 49 (2) ◽  
pp. 528-532 ◽  
Author(s):  
Xiao-Dong Wang ◽  
Bo Chen ◽  
Hai-Feng Wang ◽  
Xin Zheng ◽  
Shi-Jie Liu ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Amorphous Silicon ◽  
Spectroscopic Ellipsometry ◽  
Optical Constants ◽  
Ordered Structure ◽  
Radio Frequency Magnetron Sputtering ◽  
Medium Range Order ◽  
Medium Range ◽  
Si Films

Amorphous silicon (a-Si) films were prepared by radio frequency magnetron sputtering. Spectroscopic ellipsometry (SE) was utilized to detect an ordered-structure fraction in a-Si. The SE analysis of a-Si films with different thicknesses (7.0–140.0 nm) demonstrates that no more than 2.81% of medium-range order exists in the samples, and interestingly, there is a thickness dependence of optical constants for a-Si in the range of 1.5–5.0 eV.

Nanoscale Rapid Melting and Crystallization of Amorphous Silicon Thin Films

2005 ◽  
Author(s):  
A. Chimmalgi ◽  
D. J. Hwang ◽  
C. P. Griogoropoulos
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Laser Energy ◽  
Near Field ◽  
Field Enhancement ◽  
Laser Pulses ◽  
Nanosecond Laser ◽  
Rapid Melting ◽  
Si Films ◽  
Melting And Crystallization

Nanostructuring of thin films is gaining widespread importance owing to ever-increasing applications in a variety of fields. The current study details nanosecond laser-based rapid melting and crystallization of thin amorphous silicon (a-Si) films at the nanoscale. Two different near-field processing schemes were employed. In the first scheme, local field enhancement in the near-field of a SPM probe tip irradiated with nanosecond laser pulses was utilized. As a second approach, the laser beam was spatially confined by a cantilevered near field scanning microscope tip (NSOM) fiber tip. Details of various modification regimes produced as a result of the rapid a-Si melting and crystallization transformations that critically depend on the input laser fluence are presented. At one extreme corresponding to relatively high applied fluence, ablation area surrounded by a narrow melt region was observed. At the other extreme, where the incident laser energy density is much lower, single nanostructures with a lateral dimension of ~90 nm were defined. The ability to induce nucleation and produce single semiconductor nanostructures in a controlled fashion may be crucial in the field of nano-opto-electronics.

Fabrication of Mechanical Microstructures Using Amorphous Silicon Films on Glass Substrates

2000 ◽  
Vol 609 ◽  
Author(s):  
Chingwen Yeh ◽  
James B. Boyce ◽  
Jackson Ho ◽  
Rachel Lau
Keyword(s):  
Amorphous Silicon ◽  
Glass Substrate ◽  
Substrate Material ◽  
Cantilever Beams ◽  
Glass Substrates ◽  
Annealing Temperatures ◽  
Film Adhesion ◽  
Stress Changes ◽  
New Process ◽  
Si Films

ABSTRACTA new process of surface micromachining has been developed, where amorphous silicon (a-Si) and oxynitride films are used as structural and sacrificial layers on the glass substrate, respectively. Due to glass as the substrate material, the temperatures for all process steps need to be lower than 600°C. Some generic mechanical microstructures such as cantilever beams, bridges, and membranes have been fabricated. The stress changes of a-Si films with annealing temperatures are studied. It is found that the residual stress can be minimized using thermal annealing at 430°C for a few hours. In addition, some process issues such as a-Si film bubbling, the film adhesion of a-Si to the glass substrate, and stiction during structure release are discussed.

Aluminum-Induced Crystalization of Amorphous Silicon Films Deposited by Megnetron Sputtering

2013 ◽  
Vol 690-693 ◽  
pp. 1655-1658
Author(s):  
Jun Qian ◽  
Wei Min Shi ◽  
Jing Jin ◽  
Ji Rong Li ◽  
Yang Liao
Keyword(s):  
Raman Spectroscopy ◽  
Magnetron Sputtering ◽  
Amorphous Silicon ◽  
Energy Dispersive Spectroscopy ◽  
Nucleation And Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Annealing Procedure ◽  
Si Films ◽  
Induced Crystallization

Aluminum–induced crystallization of sputtered a-Si under two-step annealing procedure on glass substrate is studied. A 200 nm thick a-Si film was deposited by magnetron sputtering on glass and a Al film of 150 nm was sputtered on top. The samples were annealed under two-step annealing procedure. Nucleation and growth of grains were followed by optical microscopy (OM), X-ray diffraction (XRD), Raman spectroscopy, and energy dispersive spectroscopy (EDS). Continuous (111) oriented poly-Si films were obtained with a Raman Peak at 520.8cm-1. The different annealing periods is discussed.

scholarly journals Crystallization of optically thick amorphous silicon films by near-IR femtosecond laser processing

2020 ◽  
Author(s):  
Kirill Bronnikov ◽  
Alexander Dostovalov ◽  
Artem Cherepakhin ◽  
Eugeny Mitsai ◽  
Alexander Nepomniaschiy ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Amorphous Silicon ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Visible Spectral Range ◽  
Ir Radiation ◽  
Optical Elements ◽  
Near Ir ◽  
Lateral Crystallization ◽  
Si Films

Amorphous silicon (α-Si) film present an inexpensive and promising material for optoelectronic and nanophotonic applications. Its basic optical and optoelectronic properties are known to be improved via phase transition from amorphous to polycrystalline phase. Infrared femtosecond laser radiation can be considered as a promising nondestructive and facile way to drive uniform in-depth and lateral crystallization of α-Si films that are typically opaque in UV-visible spectral range. However, so far only a few studies reported on utilization of near-IR radiation for laser-induced crystallization of α-Si providing no information regarding optical properties of the resultant polycrystalline Si films. The present work demonstrates efficient and gentle single-pass crystallization of α-Si films induced by their direct irradiation with near-IR femtosecond laser pulses coming at sub-MHz repetition rate. Comprehensive analysis of morphology and composition of laser-annealed films by atomic-force microscopy, optical, micro-Raman and energy-dispersive X-ray spectroscopy, as well as numerical modeling of optical spectra, confirmed efficient crystallization of α-Si and high-quality of the obtained films. Moreover, we highlight localized laser-driven crystallization of α-Si as a promising way for optical information encryption, anti-counterfeiting and fabrication of micro-optical elements.

Research on Quantum State in Fabricating Poly-Si Films

2010 ◽  
Vol 428-429 ◽  
pp. 540-543
Author(s):  
Rui Min Jin ◽  
Lan Li Chen ◽  
Peng Hui Luo ◽  
Xin Feng Guo ◽  
Jing Xiao Lu
Keyword(s):  
Raman Scattering ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Quantum State ◽  
Rapid Thermal Annealing ◽  
Glass Substrate ◽  
Quantum States ◽  
Silicon Films ◽  
Si Films ◽  
Electronic Microscope

Amorphous silicon films prepared by PECVD on glass substrate have been crystallized by rapid thermal annealing (RTA). By means of micro-Raman scattering and scanning electronic microscope (SEM), the quantum states in these processions are found and discussed.

Formation of Large, Orientation-Controlled, Nearly Single Crystalline Si Thin Films on SiO2 Using Contact Printing of Rolled and Annealed Nickel Tapes

2003 ◽  
Vol 762 ◽  
Author(s):  
Hwang Huh ◽  
Jung H. Shin
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
Amorphous Silicon ◽  
Tem Analysis ◽  
Contact Printing ◽  
Single Crystalline ◽  
High Resolution Tem ◽  
Lateral Crystallization ◽  
Si Films

AbstractAmorphous silicon (a-Si) films prepared on oxidized silicon wafer were crystallized to a highly textured form using contact printing of rolled and annealed nickel tapes. Crystallization was achieved by first annealing the a-Si film in contact with patterned Ni tape at 600°C for 20 min in a flowing forming gas (90 % N2, 10 % H2) environment, then removing the Ni tape and further annealing the a-Si film in vacuum for2hrsat600°C. An array of crystalline regions with diameters of up to 20 μm could be formed. Electron microscopy indicates that the regions are essentially single-crystalline except for the presence of twins and/or type A-B formations, and that all regions have the same orientation in all 3 directions even when separated by more than hundreds of microns. High resolution TEM analysis shows that formation of such orientation-controlled, nearly single crystalline regions is due to formation of nearly single crystalline NiSi2 under the point of contact, which then acts as the template for silicide-induced lateral crystallization. Furthermore, the orientation relationship between Si grains and Ni tape is observed to be Si (110) || Ni (001)

Sign in / Sign up

Export Citation Format

Share Document