Hot-wall MOCVD of N-polar group-III nitride materials

ABSTRACTWe use a local-orbital formalism based on density-functional theory to investigate the stoichiometry and structure of the cation- and anion-terminated (0001) surfaces of wurtzite-phase GaN and A1N. We compare the total energies computed for various p(2×2) reconstructions. First-layer atom deficient structures such as vacancies are found to be the most stable configurations for the anion- and cation-terminated surfaces. For metal rich growth conditions our calculations favor the adsorption of metal atoms. Surface chemical reactions relevant for the growth of thin nitride films, such as the adsorption of hydrogen and nitrogen from decomposed ammonia, are discussed. We determine the total energy differences for the co-adsorption of NH2 and H on different surface structures.

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Cover Picture: Non-polar group-III nitride semiconductor surfaces (Phys. Status Solidi RRL 9-10/2012)

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.201290022 ◽

2012 ◽

Vol 6 (9-10) ◽

pp. n/a-n/a

Author(s):

Holger Eisele ◽

Philipp Ebert

Keyword(s):

Semiconductor Surfaces ◽

Polar Group ◽

Group Iii ◽

Nitride Semiconductor ◽

Group Iii Nitride

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Strong and robust polarization anisotropy of site- and size-controlled single InGaN/GaN quantum wires

Scientific Reports ◽

10.1038/s41598-020-71590-x ◽

2020 ◽

Vol 10 (1) ◽

Author(s):

Hwan-Seop Yeo ◽

Kwanjae Lee ◽

Young Chul Sim ◽

Seoung-Hwan Park ◽

Yong-Hoon Cho

Keyword(s):

Quantum Wire ◽

Quantum Wires ◽

Geometrical Shape ◽

Optical Polarization ◽

Polarization Anisotropy ◽

Single Quantum ◽

Group Iii ◽

Highly Efficient ◽

Group Iii Nitride ◽

Size Controlled

Abstract Optical polarization is an indispensable component in photonic applications, the orthogonality of which extends the degree of freedom of information, and strongly polarized and highly efficient small-size emitters are essential for compact polarization-based devices. We propose a group III-nitride quantum wire for a highly-efficient, strongly-polarized emitter, the polarization anisotropy of which stems solely from its one-dimensionality. We fabricated a site-selective and size-controlled single quantum wire using the geometrical shape of a three-dimensional structure under a self-limited growth mechanism. We present a strong and robust optical polarization anisotropy at room temperature emerging from a group III-nitride single quantum wire. Based on polarization-resolved spectroscopy and strain-included 6-band k·p calculations, the strong anisotropy is mainly attributed to the anisotropic strain distribution caused by the one-dimensionality, and its robustness to temperature is associated with an asymmetric quantum confinement effect.

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