scholarly journals A Brief Review of High Efficiency III-V Solar Cells for Space Application

2021 ◽  
Vol 8 ◽  
Author(s):  
J. Li ◽  
A. Aierken ◽  
Y. Liu ◽  
Y. Zhuang ◽  
X. Yang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Radiation Damage ◽  
Radiation Resistance ◽  
Radiation Effects ◽  
High Efficiency ◽  
Space Application ◽  
Cell Structures ◽  
Multijunction Solar Cells ◽  
Multijunction Solar Cell

The demands for space solar cells are continuously increasing with the rapid development of space technologies and complex space missions. The space solar cells are facing more critical challenges than before: higher conversion efficiency and better radiation resistance. Being the main power supply in spacecrafts, III-V multijunction solar cells are the main focus for space application nowadays due to their high efficiency and super radiation resistance. In multijunction solar cell structure, the key to obtaining high crystal quality and increase cell efficiency is satisfying the lattice matching and bandgap matching conditions. New materials and new structures of high efficiency multijunction solar cell structures are continuously coming out with low-cost, lightweight, flexible, and high power-to-mass ratio features in recent years. In addition to the efficiency and other properties, radiation resistance is another sole criterion for space solar cells, therefore the radiation effects of solar cells and the radiation damage mechanism have both been widely studied fields for space solar cells over the last few decades. This review briefly summarized the research progress of III-V multijunction solar cells in recent years. Different types of cell structures, research results and radiation effects of these solar cell structures under different irradiation conditions are presented. Two main solar cell radiation damage evaluation models—the equivalent fluence method and displacement damage dose method—are introduced.

scholarly journals III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

2014 ◽  
Vol 1 (3-4) ◽  
Author(s):  
Nikhil Jain ◽  
Mantu K. Hudait
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Low Cost ◽  
Si Substrate ◽  
Future Outlook ◽  
Si Solar Cells ◽  
Multijunction Solar Cells ◽  
The Future ◽  
Multijunction Solar Cell

AbstractAchieving high-efficiency solar cells and at the same time driving down the cell cost has been among the key objectives for photovoltaic researchers to attain a lower levelized cost of energy (LCOE). While the performance of silicon (Si) based solar cells have almost saturated at an efficiency of ~25%, III–V compound semiconductor based solar cells have steadily shown performance improvement at ~1% (absolute) increase per year, with a recent record efficiency of 44.7%. Integration of such high-efficiency III–V multijunction solar cells on significantly cheaper and large area Si substrate has recently attracted immense interest to address the future LCOE roadmaps by unifying the high-efficiency merits of III–V materials with low-cost and abundance of Si. This review article will discuss the current progress in the development of III–V multijunction solar cell integration onto Si substrate. The current state-of-the-art for III–V-on-Si solar cells along with their theoretical performance projections is presented. Next, the key design criteria and the technical challenges associated with the integration of III–V multijunction solar cells on Si are reviewed. Different technological routes for integrating III–V solar cells on Si substrate through heteroepitaxial integration and via mechanical stacking approach are presented. The key merits and technical challenges for all of the till-date available technologies are summarized. Finally, the prospects, opportunities and future outlook toward further advancing the performance of III–V-on-Si multijunction solar cells are discussed. With the plummeting price of Si solar cells accompanied with the tremendous headroom available for improving the III–V solar cell efficiencies, the future prospects for successful integration of III–V solar cell technology onto Si substrate look very promising to unlock an era of next generation of high-efficiency and low-cost photovoltaics.

High-Efficiency Multijunction Solar Cells

MRS Bulletin ◽  
2007 ◽  
Vol 32 (3) ◽  
pp. 230-235 ◽  
Author(s):  
Frank Dimroth ◽  
Sarah Kurtz
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Materials Science ◽  
Photovoltaic Device ◽  
New Materials ◽  
Multijunction Solar Cells ◽  
Multijunction Solar Cell ◽  
High Absorption Coefficient ◽  
High Absorption

AbstractThe efficiency of a solar cell can be increased by stacking multiple solar cells with a range of bandgap energies, resulting in a multijunction solar cell with a maximum the oretical efficiency limit of 86.8% III–V compound semiconductors are good candidates for fabricating such multijunction solar cells for two reasons: they can be grown with excellent material quality; and their bandgaps span a wide spectral range, mostly with direct bandgaps, implying a high absorption coefficient. These factors are the reason for the success of this technology, which has achieved 39% efficiency, the highest solar-to-electric conversion efficiency of any photovoltaic device to date. This article explores the materials science of today's high-efficiency multijunction cells and describes challenges associated with new materials developments and how they may lead to next-generation, multijunction solar cell concepts.

scholarly journals Introduction, Past and Present Scenario of Solar Cell Materials

2021 ◽  
pp. 1-23
Author(s):  
M. Rizwan
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Quantum Dot ◽  
19Th Century ◽  
High Efficiency ◽  
Cost Effective ◽  
Organic Hybrid ◽  
2Nd Generation ◽  
Multijunction Solar Cells ◽  
The Stability

Solar cells convert sunlight into electricity directly. It is a reliable, non-toxic and pollution free source of electricity. Since 19th century researchers have been trying to investigate different materials for solar cell devices. Commercially, Si based solar are predominate in this field, however, with passage of time different materials have been reported. Solar cell techniques are based on three different generations. 1st generation is based on Si and 2nd generation includes thin-films of CuInGaSe, GaAs, CdTe and GaInP etc. whereas 3rd generation is based on organic, hybrid perovskites, quantum dot (QD)-sensitizers & dye-sensitizers solar cells. Among all these, the 3rd generation solar cells are the most efficient and more cost effective than 1nd and 2nd generation solar cells. The 2nd generation is less costly but also less efficient compared to 1st generation. 3rd generation faces degradation of the photovoltaic materials which is a major problem. In this chapter different reported materials since 19th century for solar cells are mentioned. The past and present scenarios of solar cells are discussed comprehensively. It is observed that Si-based and multijunction solar cells dominate the market. Although, theoretically it is reported that hybrid perovskites and quantum dot materials for solar cell are the most efficient materials for photovoltaic PV devices. In spite of the high efficiency the stability of organic, hybrid perovskites, QD-sensitizers &dye-sensitizer materials is a big challenge.

scholarly journals Study and Analytical Modeling of the Influence of Technological and Geometric Parameters on the Performance of Ga0:67In0:33P=GaAs=Ga0:70In0:30As Tri-junction Photovoltaic Solar Cells

2020 ◽  
pp. 66-78
Author(s):  
N. Ndorere ◽  
B. Kounouhewa ◽  
M.B. Agbomahena
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Geometric Parameters ◽  
Cell Structures ◽  
In Doping ◽  
Wide Range ◽  
Proportional Increase ◽  
The One ◽  
Photovoltaic Solar Cells

In the context of global energy consumption, the production of photovoltaic solar energy remains very low. One solution to this problem is to use multi-junction solar cells with high efficiency. Efforts are being made to increase the efficiency of solar cells and reduce their cost of production. In order to optimize the performance of multi-junction solar cells, this paper presents an analytical model allowing to study and model the influence of technological and geometric parameters on the performance of tri-junction solar cells Ga0:67In0:33P=GaAs=Ga0:70In0:30As. These parameters are the thickness, doping and Gap energy of the three sub-cells making up the tri-junction solar structure. The thicknesses and doping of the emitters (bases) of the sub-cells are varied and chosen in order to optimize the efficiency of the Trijunction Solar Cell (TJSC) Ga0:67In0:33P=GaAs=Ga0:70In0:30As. The one hand, the base doping (emitter) is selected so as to minimize the dark current and the other hand,to reduce the resistive losses in this region. As for the thickness, it is chosen so as to minimize the recombination phenomena. The simulation results show that for a given thickness, the sub-cell efficiencies have maximums which evolve with the increase in doping. If the doping of the base (or emitter) of the sub-cells increases, there follows a proportional increase in the efficiency. In addition, when the optimal doping and thickness of the bases (or emitters) are reached, above these, they can vary over a wide range without considerably modifying the efficiency of the solar cell. This point about the tolerance ranges is very important for the practical realization of Photovoltaic solar cell structures. These results also show that the optimal performance of the Tri-junction Solar Cell are obtained for the relatively low thicknesses of the bases (or emitters) (100nm-700nm) with high doping values(Nb = 8e + 18cm

scholarly journals High-Efficiency Solar Cells with a Planar Nanostructure Junction

2020 ◽  
Vol 5 (3) ◽  
Author(s):  
Lucky Agarwal
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Power Conversion Efficiency ◽  
Conversion Efficiency ◽  
High Efficiency ◽  
Power Conversion ◽  
Photovoltaic Devices ◽  
Cell Structures ◽  
High Efficiency Solar Cells ◽  
Current Research Interest

Considering the current research interest in Organic / Inorganic (ZnO) hybrid solar cells structures in developing advanced photovoltaic devices, three different types of solar cell structures are proposed. In the proposed structures, hybrid solar cell composed of ZnO nanoparticles are used as an electron-acceptor material and PEDOT:PSS is intruded in between the nanoparticles, which reported to possesses power-conversion efficiency in excess of 8%. The use of p-ZnO layer results to improve the device performance on the rigid substrate. The power-conversion efficiency of the developed solar cell was found to be as high as 10% when measured under AM 1.5G illumination. Further, simulations have been carried out whose results are in line with experimental results.

Physics of High Efficiency Multijunction Solar Cells

1987 ◽  
Vol 95 ◽  
Author(s):  
Jeffrey Yang ◽  
Robert Ross ◽  
Ralph Mohr ◽  
Jeffrey P. Fournier
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Stainless Steel Substrate ◽  
Steel Substrate ◽  
Device Physics ◽  
Spectrum Splitting ◽  
High Efficiency Solar Cells ◽  
Multijunction Solar Cells ◽  
Cell Layers

AbstractWe have shown that high efficiency solar cells can be obtained by incorporating materials of different band gaps in a multijunction configuration. This configuration gives rise to high efficiency due to spectrum splitting as well as superior stability due to thin top cells.We have fabricated multijunction solar cells and acheived a 13% conversion efficiency using 1.7eV a-Si:F:H and 1.5 eV a-Si:Ge:F:H materials in a three-cell triple configuration. This device was deposited onto a stainless steel substrate coated with a back reflector; it also incorporates a microcrystalline p+ layer.The physical properties of each of the solar cell layers and their role in the device physics of a high efficiency solar cell will be described.

scholarly journals Numerical Simulation Analysis of Ag Crystallite Effects on Interface of Front Metal and Silicon in the PERC Solar Cell

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 592
Author(s):  
Myeong Sang Jeong ◽  
Yonghwan Lee ◽  
Ka-Hyun Kim ◽  
Sungjin Choi ◽  
Min Gu Kang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Surface Recombination ◽  
Open Circuit ◽  
Surface Recombination Velocity ◽  
Metal Interface ◽  
Ag Crystallites ◽  
Recombination Velocity

In the fabrication of crystalline silicon solar cells, the contact properties between the front metal electrode and silicon are one of the most important parameters for achieving high-efficiency, as it is an integral element in the formation of solar cell electrodes. This entails an increase in the surface recombination velocity and a drop in the open-circuit voltage of the solar cell; hence, controlling the recombination velocity at the metal-silicon interface becomes a critical factor in the process. In this study, the distribution of Ag crystallites formed on the silicon-metal interface, the surface recombination velocity in the silicon-metal interface and the resulting changes in the performance of the Passivated Emitter and Rear Contact (PERC) solar cells were analyzed by controlling the firing temperature. The Ag crystallite distribution gradually increased corresponding to a firing temperature increase from 850 ∘C to 950 ∘C. The surface recombination velocity at the silicon-metal interface increased from 353 to 599 cm/s and the open-circuit voltage of the PERC solar cell decreased from 659.7 to 647 mV. Technology Computer-Aided Design (TCAD) simulation was used for detailed analysis on the effect of the surface recombination velocity at the silicon-metal interface on the PERC solar cell performance. Simulations showed that the increase in the distribution of Ag crystallites and surface recombination velocity at the silicon-metal interface played an important role in the decrease of open-circuit voltage of the PERC solar cell at temperatures of 850–900 ∘C, whereas the damage caused by the emitter over fire was determined as the main cause of the voltage drop at 950 ∘C. These results are expected to serve as a steppingstone for further research on improvement in the silicon-metal interface properties of silicon-based solar cells and investigation on high-efficiency solar cells.

scholarly journals Growth of GaP Layers on Si Substrates in a Standard MOVPE Reactor for Multijunction Solar Cells

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 398
Author(s):  
Pablo Caño ◽  
Carmen M. Ruiz ◽  
Amalia Navarro ◽  
Beatriz Galiana ◽  
Iván García ◽  
...  
Keyword(s):  
Solar Cells ◽  
Gallium Phosphide ◽  
Growth Process ◽  
Electrical Characterization ◽  
Substrate Preparation ◽  
Nucleation Layer ◽  
Si Substrates ◽  
Ideal Candidate ◽  
Multijunction Solar Cells ◽  
Multijunction Solar Cell

Gallium phosphide (GaP) is an ideal candidate to implement a III-V nucleation layer on a silicon substrate. The optimization of this nucleation has been pursued for decades, since it can form a virtual substrate to grow monolithically III-V devices. In this work we present a GaP nucleation approach using a standard MOVPE reactor with regular precursors. This design simplifies the epitaxial growth in comparison to other routines reported, making the manufacturing process converge to an industrial scale. In short, our approach intends to mimic what is done to grow multijunction solar cells on Ge by MOVPE, namely, to develop a growth process that uses a single reactor to manufacture the complete III-V structure, at common MOVPE process temperatures, using conventional precursors. Here, we present the different steps in such GaP nucleation routine, which include the substrate preparation, the nucleation itself and the creation of a p-n junction for a Si bottom cell. The morphological and structural measurements have been made with AFM, SEM, TEM and Raman spectroscopy. These results show a promising surface for subsequent III-V growth with limited roughness and high crystallographic quality. For its part, the electrical characterization reveals that the routine has also formed a p-n junction that can serve as bottom subcell for the multijunction solar cell.

17.8%-efficient Amorphous Silicon Heterojunction Solar Cells on p-type Silicon Wafers

2006 ◽  
Vol 910 ◽  
Author(s):  
Qi Wang ◽  
Matt P. Page ◽  
Eugene Iwancizko ◽  
Yueqin Xu ◽  
Yanfa Yan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
High Efficiency ◽  
Short Circuit ◽  
Open Circuit ◽  
Layer Growth ◽  
Surface Recombination Velocity ◽  
Back Contact ◽  
P Type

AbstractWe have achieved an independently-confirmed 17.8% conversion efficiency in a 1-cm2, p-type, float-zone silicon (FZ-Si) based heterojunction solar cell. Both the front emitter and back contact are hydrogenated amorphous silicon (a-Si:H) deposited by hot-wire chemical vapor deposition (HWCVD). This is the highest reported efficiency for a HWCVD silicon heterojunction (SHJ) solar cell. Two main improvements lead to our most recent increases in efficiency: 1) the use of textured Si wafers, and 2) the application of a-Si:H heterojunctions on both sides of the cell. Despite the use of textured c-Si to increase the short-circuit current, we were able to maintain the same 0.65 V open-circuit voltage as on flat c-Si. This is achieved by coating a-Si:H conformally on the c-Si surfaces, including covering the tips of the anisotropically-etched pyramids. A brief atomic H treatment before emitter deposition is not necessary on the textured wafers, though it was helpful in the flat wafers. It is essential to high efficiency SHJ solar cells that the emitter grows abruptly as amorphous silicon, instead of as microcrystalline or epitaxial Si. The contact on each side of the cell comprises a thin (< 5 nm) low substrate temperature (~100°C) intrinsic a-Si:H layer, followed by a doped layer. Our intrinsic layers are deposited at 0.3-1.2 nm/s. The doped emitter and back-contact layers were deposited at a higher temperature (>200°C) and grown from PH3/SiH4/H2 and B2H6/SiH4/H2 doping gas mixtures, respectively. This combination of low (intrinsic) and high (doped layer) growth temperatures was optimized by lifetime and surface recombination velocity measurements. Our rapid efficiency advance suggests that HWCVD may have advantages over plasma-enhanced (PE) CVD in fabrication of high-efficiency heterojunction c-Si cells; there is no need for process optimization to avoid plasma damage to the delicate, high-quality, Si wafers.

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