scholarly journals Study and Analytical Modeling of the Influence of Technological and Geometric Parameters on the Performance of Ga0:67In0:33P=GaAs=Ga0:70In0:30As Tri-junction Photovoltaic Solar Cells

2020 ◽  
pp. 66-78
Author(s):  
N. Ndorere ◽  
B. Kounouhewa ◽  
M.B. Agbomahena
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Geometric Parameters ◽  
Cell Structures ◽  
In Doping ◽  
Wide Range ◽  
Proportional Increase ◽  
The One ◽  
Photovoltaic Solar Cells

In the context of global energy consumption, the production of photovoltaic solar energy remains very low. One solution to this problem is to use multi-junction solar cells with high efficiency. Efforts are being made to increase the efficiency of solar cells and reduce their cost of production. In order to optimize the performance of multi-junction solar cells, this paper presents an analytical model allowing to study and model the influence of technological and geometric parameters on the performance of tri-junction solar cells Ga0:67In0:33P=GaAs=Ga0:70In0:30As. These parameters are the thickness, doping and Gap energy of the three sub-cells making up the tri-junction solar structure. The thicknesses and doping of the emitters (bases) of the sub-cells are varied and chosen in order to optimize the efficiency of the Trijunction Solar Cell (TJSC) Ga0:67In0:33P=GaAs=Ga0:70In0:30As. The one hand, the base doping (emitter) is selected so as to minimize the dark current and the other hand,to reduce the resistive losses in this region. As for the thickness, it is chosen so as to minimize the recombination phenomena. The simulation results show that for a given thickness, the sub-cell efficiencies have maximums which evolve with the increase in doping. If the doping of the base (or emitter) of the sub-cells increases, there follows a proportional increase in the efficiency. In addition, when the optimal doping and thickness of the bases (or emitters) are reached, above these, they can vary over a wide range without considerably modifying the efficiency of the solar cell. This point about the tolerance ranges is very important for the practical realization of Photovoltaic solar cell structures. These results also show that the optimal performance of the Tri-junction Solar Cell are obtained for the relatively low thicknesses of the bases (or emitters) (100nm-700nm) with high doping values(Nb = 8e + 18cm

Parameter Optimization of Photovoltaic Solar Cell and Panel Using Genetic Algorithms Strategy

2016 ◽  
pp. 581-600
Author(s):  
Benmessaoud Mohammed Tarik ◽  
Fatima Zohra Zerhouni ◽  
Amine Boudghene Stambouli ◽  
Mustapha Tioursi ◽  
Aouad M'harer
Keyword(s):  
Genetic Algorithms ◽  
Solar Cells ◽  
Solar Cell ◽  
Numerical Technique ◽  
Simulated Data ◽  
Parameter Extraction ◽  
Electrical Parameters ◽  
Study Results ◽  
The One ◽  
Photovoltaic Solar Cells

In this chapter, we propose to perform a numerical technique based on genetic algorithms (GAs) to identify the electrical parameters (Is, Iph, Rs, Rsh, and n) of photovoltaic (PV) solar cells and modules. The one diode type approach is used to model the I–V characteristic of the solar cell. To extract electrical parameters, the approach is formulated as optimization problem. The GAs approach was used as a numerical technique in order to overcome problems involved in the local minima in the case optimization criteria. Compared to other methods, we find that the GAs is a very efficient technique to estimate the electrical parameters of photovoltaic solar cells and modules. Compared with other parameter extraction techniques, based on statistical study, results indicate the consistency and uniformity of method in terms of the quality of final solutions. In parallel, the simulated data with the extracted parameters of method base with GAs are in very good agreement with the experimental data in all cases.

Parameter Optimization of Photovoltaic Solar Cell and Panel Using Genetic Algorithms Strategy

2016 ◽  
pp. 1371-1390
Author(s):  
Benmessaoud Mohammed Tarik ◽  
Fatima Zohra Zerhouni ◽  
Amine Boudghene Stambouli ◽  
Mustapha Tioursi ◽  
Aouad M'harer
Keyword(s):  
Genetic Algorithms ◽  
Solar Cells ◽  
Solar Cell ◽  
Numerical Technique ◽  
Simulated Data ◽  
Parameter Extraction ◽  
Electrical Parameters ◽  
Study Results ◽  
The One ◽  
Photovoltaic Solar Cells

In this chapter, we propose to perform a numerical technique based on genetic algorithms (GAs) to identify the electrical parameters (Is, Iph, Rs, Rsh, and n) of photovoltaic (PV) solar cells and modules. The one diode type approach is used to model the I–V characteristic of the solar cell. To extract electrical parameters, the approach is formulated as optimization problem. The GAs approach was used as a numerical technique in order to overcome problems involved in the local minima in the case optimization criteria. Compared to other methods, we find that the GAs is a very efficient technique to estimate the electrical parameters of photovoltaic solar cells and modules. Compared with other parameter extraction techniques, based on statistical study, results indicate the consistency and uniformity of method in terms of the quality of final solutions. In parallel, the simulated data with the extracted parameters of method base with GAs are in very good agreement with the experimental data in all cases.

scholarly journals A Brief Review of High Efficiency III-V Solar Cells for Space Application

2021 ◽  
Vol 8 ◽  
Author(s):  
J. Li ◽  
A. Aierken ◽  
Y. Liu ◽  
Y. Zhuang ◽  
X. Yang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Radiation Damage ◽  
Radiation Resistance ◽  
Radiation Effects ◽  
High Efficiency ◽  
Space Application ◽  
Cell Structures ◽  
Multijunction Solar Cells ◽  
Multijunction Solar Cell

The demands for space solar cells are continuously increasing with the rapid development of space technologies and complex space missions. The space solar cells are facing more critical challenges than before: higher conversion efficiency and better radiation resistance. Being the main power supply in spacecrafts, III-V multijunction solar cells are the main focus for space application nowadays due to their high efficiency and super radiation resistance. In multijunction solar cell structure, the key to obtaining high crystal quality and increase cell efficiency is satisfying the lattice matching and bandgap matching conditions. New materials and new structures of high efficiency multijunction solar cell structures are continuously coming out with low-cost, lightweight, flexible, and high power-to-mass ratio features in recent years. In addition to the efficiency and other properties, radiation resistance is another sole criterion for space solar cells, therefore the radiation effects of solar cells and the radiation damage mechanism have both been widely studied fields for space solar cells over the last few decades. This review briefly summarized the research progress of III-V multijunction solar cells in recent years. Different types of cell structures, research results and radiation effects of these solar cell structures under different irradiation conditions are presented. Two main solar cell radiation damage evaluation models—the equivalent fluence method and displacement damage dose method—are introduced.

scholarly journals High-Efficiency Solar Cells with a Planar Nanostructure Junction

2020 ◽  
Vol 5 (3) ◽  
Author(s):  
Lucky Agarwal
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Power Conversion Efficiency ◽  
Conversion Efficiency ◽  
High Efficiency ◽  
Power Conversion ◽  
Photovoltaic Devices ◽  
Cell Structures ◽  
High Efficiency Solar Cells ◽  
Current Research Interest

Considering the current research interest in Organic / Inorganic (ZnO) hybrid solar cells structures in developing advanced photovoltaic devices, three different types of solar cell structures are proposed. In the proposed structures, hybrid solar cell composed of ZnO nanoparticles are used as an electron-acceptor material and PEDOT:PSS is intruded in between the nanoparticles, which reported to possesses power-conversion efficiency in excess of 8%. The use of p-ZnO layer results to improve the device performance on the rigid substrate. The power-conversion efficiency of the developed solar cell was found to be as high as 10% when measured under AM 1.5G illumination. Further, simulations have been carried out whose results are in line with experimental results.

Reversible, Light Induced Changes in a-Si:H Films and Solar Cells

1985 ◽  
Vol 49 ◽  
Author(s):  
C. R. Wronski
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Photovoltaic Properties ◽  
Cell Structures ◽  
Wide Range ◽  
Continuous Progress ◽  
Staebler Wronski Effect ◽  
Induced Changes ◽  
Conversion Efficiencies ◽  
Term Performance

Continuous progress is being made in the conversion efficiencies of a- Si:H solar cells and efficiencies in excess of 11% have been achieved. Because of these advances and the development of a-Si:H cell technologies there is an increased interest in the long term performance of a-Si:H cells and the mechanisms responsible for their degradation. The reversible light-induced changes in a-Si:H solar cells are generally associated with the Staebler-Wronski effect (SWE) (1). This effect has been studied on a wide range of a-Si:H materials using a variety of different experimental techniques and this talk reviews the results that have been obtained on a- Si:H films and solar cells (2). It discusses in greater detail recent studies on a-Si:H solar cell structures in which simultanous measurements have been made on the changes in both the photovoltaic properties as well as their electronic properties and densities of gap states. In particular it focuses on several results obtained with semitransparent metal-undoped a-Si:H Schottky barrier solar cell structures (3).

scholarly journals Numerical Simulation Analysis of Ag Crystallite Effects on Interface of Front Metal and Silicon in the PERC Solar Cell

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 592
Author(s):  
Myeong Sang Jeong ◽  
Yonghwan Lee ◽  
Ka-Hyun Kim ◽  
Sungjin Choi ◽  
Min Gu Kang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Surface Recombination ◽  
Open Circuit ◽  
Surface Recombination Velocity ◽  
Metal Interface ◽  
Ag Crystallites ◽  
Recombination Velocity

In the fabrication of crystalline silicon solar cells, the contact properties between the front metal electrode and silicon are one of the most important parameters for achieving high-efficiency, as it is an integral element in the formation of solar cell electrodes. This entails an increase in the surface recombination velocity and a drop in the open-circuit voltage of the solar cell; hence, controlling the recombination velocity at the metal-silicon interface becomes a critical factor in the process. In this study, the distribution of Ag crystallites formed on the silicon-metal interface, the surface recombination velocity in the silicon-metal interface and the resulting changes in the performance of the Passivated Emitter and Rear Contact (PERC) solar cells were analyzed by controlling the firing temperature. The Ag crystallite distribution gradually increased corresponding to a firing temperature increase from 850 ∘C to 950 ∘C. The surface recombination velocity at the silicon-metal interface increased from 353 to 599 cm/s and the open-circuit voltage of the PERC solar cell decreased from 659.7 to 647 mV. Technology Computer-Aided Design (TCAD) simulation was used for detailed analysis on the effect of the surface recombination velocity at the silicon-metal interface on the PERC solar cell performance. Simulations showed that the increase in the distribution of Ag crystallites and surface recombination velocity at the silicon-metal interface played an important role in the decrease of open-circuit voltage of the PERC solar cell at temperatures of 850–900 ∘C, whereas the damage caused by the emitter over fire was determined as the main cause of the voltage drop at 950 ∘C. These results are expected to serve as a steppingstone for further research on improvement in the silicon-metal interface properties of silicon-based solar cells and investigation on high-efficiency solar cells.

scholarly journals A general approach to high-efficiency perovskite solar cells by any antisolvent

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Alexander D. Taylor ◽  
Qing Sun ◽  
Katelyn P. Goetz ◽  
Qingzhi An ◽  
Tim Schramm ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Perovskite Solar Cells ◽  
Precursor Solution ◽  
Microstructural Characterization ◽  
Application Rate ◽  
Perovskite Layer ◽  
Highly Efficient ◽  
Application Procedure ◽  
Wide Range

AbstractDeposition of perovskite films by antisolvent engineering is a highly common method employed in perovskite photovoltaics research. Herein, we report on a general method that allows for the fabrication of highly efficient perovskite solar cells by any antisolvent via manipulation of the antisolvent application rate. Through detailed structural, compositional, and microstructural characterization of perovskite layers fabricated by 14 different antisolvents, we identify two key factors that influence the quality of the perovskite layer: the solubility of the organic precursors in the antisolvent and its miscibility with the host solvent(s) of the perovskite precursor solution, which combine to produce rate-dependent behavior during the antisolvent application step. Leveraging this, we produce devices with power conversion efficiencies (PCEs) that exceed 21% using a wide range of antisolvents. Moreover, we demonstrate that employing the optimal antisolvent application procedure allows for highly efficient solar cells to be fabricated from a broad range of precursor stoichiometries.

17.8%-efficient Amorphous Silicon Heterojunction Solar Cells on p-type Silicon Wafers

2006 ◽  
Vol 910 ◽  
Author(s):  
Qi Wang ◽  
Matt P. Page ◽  
Eugene Iwancizko ◽  
Yueqin Xu ◽  
Yanfa Yan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
High Efficiency ◽  
Short Circuit ◽  
Open Circuit ◽  
Layer Growth ◽  
Surface Recombination Velocity ◽  
Back Contact ◽  
P Type

AbstractWe have achieved an independently-confirmed 17.8% conversion efficiency in a 1-cm2, p-type, float-zone silicon (FZ-Si) based heterojunction solar cell. Both the front emitter and back contact are hydrogenated amorphous silicon (a-Si:H) deposited by hot-wire chemical vapor deposition (HWCVD). This is the highest reported efficiency for a HWCVD silicon heterojunction (SHJ) solar cell. Two main improvements lead to our most recent increases in efficiency: 1) the use of textured Si wafers, and 2) the application of a-Si:H heterojunctions on both sides of the cell. Despite the use of textured c-Si to increase the short-circuit current, we were able to maintain the same 0.65 V open-circuit voltage as on flat c-Si. This is achieved by coating a-Si:H conformally on the c-Si surfaces, including covering the tips of the anisotropically-etched pyramids. A brief atomic H treatment before emitter deposition is not necessary on the textured wafers, though it was helpful in the flat wafers. It is essential to high efficiency SHJ solar cells that the emitter grows abruptly as amorphous silicon, instead of as microcrystalline or epitaxial Si. The contact on each side of the cell comprises a thin (< 5 nm) low substrate temperature (~100°C) intrinsic a-Si:H layer, followed by a doped layer. Our intrinsic layers are deposited at 0.3-1.2 nm/s. The doped emitter and back-contact layers were deposited at a higher temperature (>200°C) and grown from PH3/SiH4/H2 and B2H6/SiH4/H2 doping gas mixtures, respectively. This combination of low (intrinsic) and high (doped layer) growth temperatures was optimized by lifetime and surface recombination velocity measurements. Our rapid efficiency advance suggests that HWCVD may have advantages over plasma-enhanced (PE) CVD in fabrication of high-efficiency heterojunction c-Si cells; there is no need for process optimization to avoid plasma damage to the delicate, high-quality, Si wafers.

On the efficiency of perovskite solar cells with a back reflector: effect of a hole transport material

2021 ◽  
Author(s):  
F. Bonnín-Ripoll ◽  
Ya. B. Martynov ◽  
R. G. Nazmitdinov ◽  
G. Cardona ◽  
R. Pujol-Nadal
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
High Efficiency ◽  
Perovskite Solar Cells ◽  
Hole Transport ◽  
Optimal Thickness ◽  
Back Reflector

A thorough optical + electrical + Lambertian scattering analysis determines the optimal thickness of a perovskite thin-film solar cell revealing its high efficiency with inorganic HTMs.

scholarly journals Complex Investigation of High Efficiency and Reliable Heterojunction Solar Cell Based on an Improved Cu2O Absorber Layer

Energies ◽  
2020 ◽  
Vol 13 (18) ◽  
pp. 4667
Author(s):  
Laurentiu Fara ◽  
Irinela Chilibon ◽  
Ørnulf Nordseth ◽  
Dan Craciunescu ◽  
Dan Savastru ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Reliability Analysis ◽  
High Performance ◽  
High Efficiency ◽  
Absorber Layer ◽  
Heterojunction Solar Cell ◽  
Complex Investigation ◽  
Heterojunction Solar Cells ◽  
Conduction Band Offset

This study is aimed at increasing the performance and reliability of silicon-based heterojunction solar cells with advanced methods. This is achieved by a numerical electro-optical modeling and reliability analysis for such solar cells correlated with experimental analysis of the Cu2O absorber layer. It yields the optimization of a silicon tandem heterojunction solar cell based on a ZnO/Cu2O subcell and a c-Si bottom subcell using electro-optical numerical modeling. The buffer layer affinity and mobility together with a low conduction band offset for the heterojunction are discussed, as well as spectral properties of the device model. Experimental research of N-doped Cu2O thin films was dedicated to two main activities: (1) fabrication of specific samples by DC magnetron sputtering and (2) detailed characterization of the analyzed samples. This last investigation was based on advanced techniques: morphological (scanning electron microscopy—SEM and atomic force microscopy—AFM), structural (X-ray diffraction—XRD), and optical (spectroscopic ellipsometry—SE and Fourier-transform infrared spectroscopy—FTIR). This approach qualified the heterojunction solar cell based on cuprous oxide with nitrogen as an attractive candidate for high-performance solar devices. A reliability analysis based on Weibull statistical distribution establishes the degradation degree and failure rate of the studied solar cells under stress and under standard conditions.

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