scholarly journals Developing a Universal Mirror–mirror Laser Mapping System for Single Event Effect Research

2020 ◽  
Vol 10 (9) ◽  
pp. 3018
Author(s):  
Cheng Gu ◽  
George Belev ◽  
Haonan Tian ◽  
Shuting Shi ◽  
Issam Nofal ◽  
...  
Keyword(s):  
Laser System ◽  
Electronic Devices ◽  
Random Access ◽  
Photon Absorption ◽  
Single Event ◽  
Large Area ◽  
Scanning Velocity ◽  
Mapping System ◽  
Mirror Mirror ◽  
Sensitivity Maps

Research on single event effects (SEEs) is significant to the design and manufacture of modern electronic devices. By applying two photon absorption (TPA) ultra-fast pulsed lasers, extra electron-hole pairs (EHPs) are generated in a desired location on a chip, simulating the process that could occur in the circuit by energetic particles. In this study, a SEE sensitivity mapping system is described which uses this method to generate real-time sensitivity maps for various electronic devices. The system hardware includes an attenuator to control the energy, a Pockels cell as a fast-optical switcher and a mirror–mirror module to project the laser beam into a certain location. The system software developed for this application controls the laser system, automatically generates sensitivity maps, communicates with the testing devices and logs the SEE results. The two main features of this laser mapping system are: high scanning velocity for large area scanning (about 1 × 1 mm) and high spatial resolution for small area scanning (about 1 × 1 μm). To verify this mapping system, sensitivity maps were generated for static random access memory (SRAM) built with 65 nm technology and for commercial operational amplifiers (op-amps). The achieved sensitivity maps were compared with circuitry analysis and laser testing results, confirming this mapping system to be effective.

scholarly journals Application of Two-Photon-Absorption Pulsed Laser for Single-Event-Effects Sensitivity Mapping Technology

Materials ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3411 ◽  
Author(s):  
Cheng Gu ◽  
Rui Chen ◽  
George Belev ◽  
Shuting Shi ◽  
Haonan Tian ◽  
...  
Keyword(s):  
Laser System ◽  
Pulsed Laser ◽  
Photon Absorption ◽  
Testing System ◽  
Single Event ◽  
Single Event Effects ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Sram Cell ◽  
Sensitivity Map

Single-event effects (SEEs) in integrated circuits and devices can be studied by utilizing ultra-fast pulsed laser system through Two Photon Absorption process. This paper presents technical ways to characterize key factors for laser based SEEs mapping testing system: output power from laser source, spot size focused by objective lens, opening window of Pockels cell, and calibration of injected laser energy. The laser based SEEs mapping testing system can work in a stable and controllable status by applying these methods. Furthermore, a sensitivity map of a Static Random Access Memory (SRAM) cell with a 65 nm technique node was created through the established laser system. The sensitivity map of the SRAM cell was compared to a map generated by a commercial simulation tool (TFIT), and the two matched well. In addition, experiments in this paper also provided energy distribution profile along Z axis that is the direction of the pulsed laser injection and threshold energy for different SRAM structures.

Optical Single-Event Transients Induced in Integrated Silicon-Photonic Waveguides by Two-Photon Absorption

2021 ◽  
pp. 1-1
Author(s):  
George N. Tzintzarov ◽  
Adrian Ildefonso ◽  
Jeffrey W. Teng ◽  
Milad Frounchi ◽  
Albert Djikeng ◽  
...  
Keyword(s):  
Photon Absorption ◽  
Single Event ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Single Event Transients ◽  
Silicon Photonic ◽  
Photonic Waveguides

Organic vapor phase deposition for the growth of large area organic electronic devices

2009 ◽  
Vol 95 (23) ◽  
pp. 233305 ◽  
Author(s):  
Richard R. Lunt ◽  
Brian E. Lassiter ◽  
Jay B. Benziger ◽  
Stephen R. Forrest
Keyword(s):  
Vapor Phase ◽  
Electronic Devices ◽  
Large Area ◽  
Organic Electronic Devices ◽  
Organic Electronic ◽  
Organic Vapor ◽  
Vapor Phase Deposition ◽  
Organic Vapor Phase Deposition

A Dosimetry Methodology for Two-Photon Absorption Induced Single-Event Effects Measurements

2014 ◽  
Vol 61 (6) ◽  
pp. 3416-3423 ◽  
Author(s):  
Ani Khachatrian ◽  
Nicolas J.-H. Roche ◽  
Dale McMorrow ◽  
Jeffrey H. Warner ◽  
Stephen P. Buchner ◽  
...  
Keyword(s):  
Photon Absorption ◽  
Single Event ◽  
Single Event Effects ◽  
Two Photon Absorption ◽  
Two Photon

scholarly journals Qualification of Operational Amplifier used in Satellite Subsystem using Picosecond Pulsed Laser System

2020 ◽  
Vol 9 (2) ◽  
pp. 523-527
Keyword(s):  
Cross Section ◽  
Operational Amplifier ◽  
Second Harmonic ◽  
Laser System ◽  
Threshold Energy ◽  
Pulsed Laser ◽  
Spot Size ◽  
Single Event ◽  
532 Nm ◽  
Pulsed Laser Irradiation

Picosecond Pulsed Laser System (PPLS) was used to simulate the single event effects (SEE) on satellite electronic components. Single event transients effect induced in an operational amplifier (LM324) to determine how transient amplitude and charge collection varied with pulsed laser energies. The wavelength and the focused spot size are the primary factors generating the resultant charge density profile. The degradation performance of LM324 induced by pulsed laser irradiation with two wavelength (1064nm, 532nm) is determined as a function of laser cross section. The transient voltage changed due to pulsed laser hitting specific transistors. This research shows the sensitivity mapping of LM324 under the effect of fundamental and second harmonic wavelengths. Determine the threshold energy of the SET in both wavelength, and compare the laser cross section of 1064 nm beam and 532 nm beam.

scholarly journals Electrical Properties and Biological Synaptic Simulation of Ag/MXene/SiO2/Pt RRAM Devices

Electronics ◽  
2020 ◽  
Vol 9 (12) ◽  
pp. 2098
Author(s):  
Xiaojuan Lian ◽  
Xinyi Shen ◽  
Jinke Fu ◽  
Zhixuan Gao ◽  
Xiang Wan ◽  
...  
Keyword(s):  
Electronic Devices ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Research Approach ◽  
Access Memory ◽  
Device Stability ◽  
Switching Characteristics ◽  
Electronic Synapse ◽  
Artificial Intelligence Systems

Utilizing electronic devices to emulate biological synapses for the construction of artificial neural networks has provided a feasible research approach for the future development of artificial intelligence systems. Until now, different kinds of electronic devices have been proposed in the realization of biological synapse functions. However, the device stability and the power consumption are major challenges for future industrialization applications. Herein, an electronic synapse of MXene/SiO2 structure-based resistive random-access memory (RRAM) devices has been designed and fabricated by taking advantage of the desirable properties of SiO2 and 2D MXene material. The proposed RRAM devices, Ag/MXene/SiO2/Pt, exhibit the resistance switching characteristics where both the volatile and nonvolatile behaviors coexist in a single device. These intriguing features of the Ag/MXene/SiO2/Pt devices make them more applicable for emulating biological synaptic plasticity. Additionally, the conductive mechanisms of the Ag/MXene/SiO2/Pt RRAM devices have been discussed on the basis of our experimental results.

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