scholarly journals Temperature and Pulse-Energy Range Suitable for Femtosecond Pulse Transmission in Si Nanowire Waveguide

2020 ◽  
Vol 10 (23) ◽  
pp. 8429
Author(s):  
Xiaochun Wang ◽  
Meicheng Fu ◽  
Heng Yang ◽  
Jiali Liao ◽  
Xiujian Li
Keyword(s):  
Energy Range ◽  
Pulse Energy ◽  
Femtosecond Pulse ◽  
Input Pulse ◽  
Silicon On Insulator ◽  
Oxide Semiconductors ◽  
Optical Gating ◽  
Pulse Transmission ◽  
Input Pulse Energy ◽  
Different Temperatures

We experimentally measured the femtosecond pulse transmission through a silicon-on-insulator (SOI) nanowire waveguide under different temperatures and input pulse energy with a cross-correlation frequency-resolved optical gating (XFROG) measurement setup. The experimental results demonstrated that the temperature and pulse energy dependence of the Si photonic nanowire waveguide (SPNW) is interesting rather than just monotonous or linear, and that the suitable temperature and pulse-energy range is as suggested in this experiment, which will be valuable for analyzing the practical design of the operating regimes and the fine dispersion engineering of various ultrafast photonic applications based on the SPNWs. The research results will contribute to developing the SPNWs with photonic elements and networks compatible with mature complementary metal–oxide–semiconductors (CMOS).

Generation of 1.30- to 1.55-μm Tunable Radiation from First Stokes Raman Shifting in Hydrogen

1997 ◽  
Vol 51 (6) ◽  
pp. 820-826 ◽  
Author(s):  
Kenneth W. Aniolek ◽  
David L. Miller ◽  
Nicholas P. Cernansky ◽  
Kevin G. Owens
Keyword(s):  
Pulse Energy ◽  
Near Infrared ◽  
Input Pulse ◽  
Dye Laser ◽  
Beam Diameter ◽  
Input Pulse Energy ◽  
Stokes Lines ◽  
Anti Stokes

Raman shifting to the near-infrared, when possible, provides a simple and economical alternative to the optical parametric oscillator (OPO) or difference frequency mixing approach. We report the production of 1.30- to 1.55-μm radiation from first Stokes Raman shifting in a single-pass, open (no capillary waveguide), hydrogen-filled Raman cell (constructed in-house) pumped with a Nd:YAG/dye laser combination operating near 900 nm. A maximum of 10 mJ (19% efficiency) of first Stokes energy was measured for the highest cell pressure (490 psia) and input pulse energy (53 mJ). The quality of the first Stokes output is similar to the dye laser output as indicated by polarization, shot-to-shot energy fluctuation, beam diameter, and linewidth. A characterization of the Stokes and anti-Stokes output was also conducted including one-dimensional spatial intensity profiles and output line dependence on input pulse energy and cell pressure. A large first Stokes conversion efficiency has been attributed to little production of higher-order Stokes and anti-Stokes lines.

Numerical investigation on the femtosecond pulse propagation and free carriers’ evolution in silicon-on-insulator waveguides

2016 ◽  
Vol 30 (21) ◽  
pp. 1650299
Author(s):  
Jin Wen ◽  
Chengju Ma ◽  
Wei Fan ◽  
Haiwei Fu ◽  
Zhenan Jia
Keyword(s):  
Pulse Width ◽  
Peak Power ◽  
Femtosecond Pulse ◽  
Pulse Propagation ◽  
Input Pulse ◽  
Leading Edge ◽  
Silicon On Insulator ◽  
Refractive Index Modulation ◽  
Free Carriers ◽  
Femtosecond Regime

The femtosecond pulse propagation and free carriers’ evolution in the silicon-on-insulator (SOI) waveguides have been numerically investigated considering the carrier’s lifetime and the pulse width of the input pulse at 1.5 [Formula: see text]m regime. Numerical results show that the free carriers’ density profile becomes gentle between the leading edge and trailing edge of the pulse in time domain due to the decreasing of the pulse intensity caused by the nonlinear absorption, which becomes more remarkable when the pulse width expands. It can be found that lifetime ranging from 5 ns to 100 ns does not affect the free carriers’ evolution clearly in femtosecond regime. In addition, the refractive index modulation can be appeared in the process of pulse propagation and free carriers evolution with lower peak power of 200 W. This research can supply some contribution to the insight of free carriers evolution in SOI waveguides.

scholarly journals Simulation of FDSOI-ISFET with Tunable Sensitivity by Temperature and Dual-Gate Structure

Electronics ◽  
2021 ◽  
Vol 10 (13) ◽  
pp. 1585
Author(s):  
Hanbin Wang ◽  
Jinshun Bi ◽  
Mengxin Liu ◽  
Tingting Han
Keyword(s):  
Gate Voltage ◽  
Computer Aided Design ◽  
Silicon On Insulator ◽  
Fully Depleted ◽  
Gate Structure ◽  
Different Temperatures ◽  
Dual Gate ◽  
Sensitivity Changes ◽  
Increasing Temperature ◽  
Aided Design

This work investigates the different sensitivities of an ion-sensitive field-effect transistor (ISFET) based on fully depleted silicon-on-insulator (FDSOI). Using computer-aided design (TCAD) tools, the sensitivity of a single-gate FDSOI based ISFET (FDSOI-ISFET) at different temperatures and the effects of the planar dual-gate structure on the sensitivity are determined. It is found that the sensitivity increases linearly with increasing temperature, reaching 890 mV/pH at 75 °C. By using a dual-gate structure and adjusting the control gate voltage, the sensitivity can be reduced from 750 mV/pH at 0 V control gate voltage to 540 mV/pH at 1 V control gate voltage. The above sensitivity changes are produced because the Nernst limit changes with temperature or the electric field generated by different control gate voltages causes changes in the carrier movement. It is proved that a single FDSOI-ISFET can have adjustable sensitivity by adjusting the operating temperature or the control gate voltage of the dual-gate device.

Surface motion from pulse transmission through anisotropic layered structures

1967 ◽  
Vol 57 (5) ◽  
pp. 983-990
Author(s):  
Edwin S. Robinson ◽  
John K. Costain
Keyword(s):  
Input Pulse ◽  
Transversely Isotropic ◽  
System Response ◽  
Transfer Coefficients ◽  
Arrival Times ◽  
Surface Motion ◽  
Pulse Transmission ◽  
Anisotropic Structures ◽  
The Fourier Transform ◽  
And Shifts

abstract Theoretical surface motion for pulse transmission through transversely isotropic elastic structures is computed by Fourier inversion of the product of the Fourier transform of an input pulse, complex transfer coefficients for anisotropic structures, and a seismograph system response. Introduction of anisotropy causes subtle changes in the angles of refraction and shifts in arrival times of different phases as intuitively expected from Snell's law. Computations suggest no obvious criteria for recognizing anisotropy from surface motion.

scholarly journals High harmonic generation in solids driven by sub-cycle mid-infrared pulses from laser filamentation

2019 ◽  
Vol 205 ◽  
pp. 02023
Author(s):  
Fumitoshi Kumaki ◽  
Hideto Shirai ◽  
Yutaka Nomura ◽  
Takao Fuji
Keyword(s):  
Crystalline Silicon ◽  
Input Pulse ◽  
High Harmonic ◽  
Ultraviolet Region ◽  
Silicon Membrane ◽  
Mid Infrared ◽  
Optical Gating ◽  
Direct Band ◽  
Laser Filamentation

Carrier-envelope phase (CEP) controlled subcycle mid-infrared pulses from two-color laser filamentation have been applied for high harmonic (HH) generation in a crystalline silicon membrane. The HH spectrum reaches the ultraviolet region (<300 nm), beyond the direct band gap of the silicon. The shape of the HH spectrum shows the strong dependency on the CEP of the input pulse. The complete waveform characterization of the sub-cycle driver pulse with frequency-resolved optical gating capable of CEP determination is the effective method for the studies of the sub-cycle dynamics.

Femtosecond Pulse Propagation through a Quantum Wire Optical Waveguide Observed by Cross-Correlation Frequency-Resolved Optical Gating Spectroscopy

2004 ◽  
Vol 43 (4B) ◽  
pp. 2002-2005
Author(s):  
Noriaki Tsurumachi ◽  
Naoki Watanabe ◽  
Kazunori Hikosaka ◽  
Xue-Lun Wang ◽  
Kazuhiro Komori ◽  
...  
Keyword(s):  
Optical Waveguide ◽  
Quantum Wire ◽  
Femtosecond Pulse ◽  
Cross Correlation ◽  
Pulse Propagation ◽  
Optical Gating ◽  
Frequency Resolved Optical Gating
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