Charge State Effect of High Energy Ions on Material Modification in the Electronic Stopping Region

It has been observed that modifications of non-metallic solids such as sputtering and surface morphology are induced by electronic excitation under high-energy ion impact and that these modifications depend on the charge of incident ions (charge-state effect or incident-charge effect). A simple model is described, consisting of an approximation to the mean-charge-evolution by saturation curves and the charge-dependent electronic stopping power, for the evaluation of the relative yield (e.g., electronic sputtering yield) of the non-equilibrium charge incidence over that of the equilibrium-charge incidence. It is found that the present model reasonably explains the charge state effect on the film thickness dependence of lattice disordering of WO3. On the other hand, the model appears to be inadequate to explain the charge-state effect on the electronic sputtering of WO3 and LiF. Brief descriptions are given for the charge-state effect on the electronic sputtering of SiO2, UO2 and UF4, and surface morphology modification of poly-methyl-methacrylate (PMMA), mica and tetrahedral amorphous carbon (ta-C).

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Equilibrium charge state distributions of high energy heavy ions

Nuclear Instruments and Methods ◽

10.1016/0029-554x(76)90851-x ◽

1976 ◽

Vol 133 (1) ◽

pp. 17-24 ◽

Cited By ~ 28

Author(s):

R.B. Clark ◽

I.S. Grant ◽

R. King ◽

D.A. Eastham ◽

T. Joy

Keyword(s):

Charge State ◽

Heavy Ions ◽

High Energy ◽

Equilibrium Charge ◽

Charge State Distributions

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Observation of surface morphology by reflection electron holography

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100154652 ◽

1989 ◽

Vol 47 ◽

pp. 536-537

Author(s):

N. Osakabe ◽

J. Endo ◽

T. Matsuda ◽

A. Tonomura

Keyword(s):

Phase Shift ◽

Surface Morphology ◽

High Sensitivity ◽

High Energy ◽

Path Difference ◽

Transmission Mode ◽

Electron Holography ◽

Dynamical Process ◽

High Vertical Resolution ◽

Amplification Technique

Progress in microscopy such as STM and TEM-TED has revealed surface structures in atomic dimension. REM has been used for the observation of surface dynamical process and surface morphology. Recently developed reflection electron holography, which employes REM optics to measure the phase shift of reflected electron, has been proved to be effective for the observation of surface morphology in high vertical resolution ≃ 0.01 Å.The key to the high sensitivity of the method is best shown by comparing the phase shift generation by surface topography with that in transmission mode. Difference in refractive index between vacuum and material Vo/2E≃10-4 owes the phase shift in transmission mode as shownn Fig. 1( a). While geometrical path difference is created in reflection mode( Fig. 1(b) ), which is measured interferometrically using high energy electron beam of wavelength ≃0.01 Å. Together with the phase amplification technique , the vertivcal resolution is expected to be ≤0.01 Å in an ideal case.

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Equilibrium-charge-state distributions of energetic ions (Z > 2) in gaseous and solid media

Atomic Data and Nuclear Data Tables ◽

10.1016/s0092-640x(73)80001-4 ◽

1973 ◽

Vol 5 (2) ◽

pp. 113-166 ◽

Cited By ~ 258

Author(s):

A.B. Wittkower ◽

H.D. Betz

Keyword(s):

Charge State ◽

Energetic Ions ◽

Equilibrium Charge ◽

Solid Media ◽

Charge State Distributions

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Charge state effect on Si K X-ray emission induced by Iq+ions impacting

Journal of Physics Conference Series ◽

10.1088/1742-6596/488/13/132038 ◽

2014 ◽

Vol 488 (13) ◽

pp. 132038

Author(s):

Yu Lei ◽

Yongtao Zhao ◽

Rui Cheng ◽

Xianming Zhou ◽

Yuanbo Sun ◽

...

Keyword(s):

Charge State ◽

X Ray ◽

State Effect

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Evidence for a Deep Two Charge State Defect in High Energy Electron Irradiated 4H-SiC

Materials Science Forum ◽

10.4028/www.scientific.net/msf.457-460.481 ◽

2004 ◽

Vol 457-460 ◽

pp. 481-484 ◽

Cited By ~ 6

Author(s):

Giovanni Alfieri ◽

Edouard V. Monakhov ◽

Bengt Gunnar Svensson

Keyword(s):

Charge State ◽

High Energy ◽

Energy Electron ◽

High Energy Electron

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Application of Radiation-Thermal Treatment to Suppress Sensitivity of Silicon Microcircuits to Single Radiation Effects

Rocket-Space Device Engineering and Information Systems ◽

10.30894/issn2409-0239.2021.8.3.99.103 ◽

2021 ◽

Vol 8 (3) ◽

pp. 99-103

Author(s):

P. B. Lagov ◽

◽

A. S. Drenin ◽

A. A. Meshcheryakov ◽

N. A. Yudanov ◽

...

Keyword(s):

Thermal Treatment ◽

Integrated Circuits ◽

Radiation Effects ◽

Experimental Tests ◽

High Energy ◽

Particle Accelerators ◽

Transfer Coefficients ◽

Heavy Charged Particles ◽

Equilibrium Charge ◽

Technological Tool

The paper analyses the possibility to reduce the sensitivity of silicon integrated circuits (ICs) to single radiation effects by means of radiation-thermal treatment including irradiation in charged particle accelerators and subsequent low-temperature heat treatment. It is shown that reduction in sensitivity to single radiation effects is provided by formation of thermostable recombination centers in semiconductor IC structure in necessary concentrations. At the same time a decrease in primary photocurrent generated by heavy charged particles or high-energy protons, reduction in transfer coefficients of parasitic bipolar transistors forming thyristor structures, reduction in carrier avalanche multiplication coefficients at high electric field strengths can be provided. Radiationthermal treatment can be introduced in the manufacturing process of ICs of various classes at the end of the manufacturing cycle and does not require correction of the basic technology. A possible undesirable growth of inverse currents and preservation of values of other electrical parameters within acceptable values when using radiation-thermal treatment is provided by choosing optimal modes of irradiation and annealing which are established in the course of experimental tests. The calculated evaluation has shown that using radiation-thermal treatment in the technology of IC fabrication can provide a decrease in the effective collection length of non-equilibrium charge carriers generated under the influence of single radiation effects by at least 10 times which allows considering radiation-thermal treatment as an effective technological tool to suppress the sensitivity to single radiation effects.

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Deep Defects in 3C-SiC Generated by H+- and He+-Implantation or by Irradiation with High-Energy Electrons

Materials Science Forum ◽

10.4028/www.scientific.net/msf.645-648.439 ◽

2010 ◽

Vol 645-648 ◽

pp. 439-442 ◽

Cited By ~ 2

Author(s):

Michael Weidner ◽

Lia Trapaidze ◽

Gerhard Pensl ◽

Sergey A. Reshanov ◽

Adolf Schöner ◽

...

Keyword(s):

Thermal Stability ◽

Charge State ◽

Cross Section ◽

Capture Cross Section ◽

Pulse Length ◽

High Energy ◽

Capture Cross ◽

Intrinsic Defects ◽

High Energy Electrons ◽

Thermal Stability Of

Intrinsic defects in 3C-SiC are generated by implantation of H+- and He+-ions or irra¬diation with high energy electrons. The defect parameters and the thermal stability of the observed defects are determined. The capture-cross-section of the W6-center is directly measured by variation of the filling pulse length. The charge state of the W6-center is obtained from double-correlated DLTS investigations according to the Poole-Frenkel effect.

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