scholarly journals Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection

Biosensors ◽  
2018 ◽  
Vol 8 (3) ◽  
pp. 72 ◽  
Author(s):  
Kristina Malsagova ◽  
Tatyana Pleshakova ◽  
Andrey Kozlov ◽  
Ivan Shumov ◽  
Mikhail Ilnitskii ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Protective Layer ◽  
Silicon On Insulator ◽  
Native Oxide ◽  
Synthetic Analogue ◽  
Micro Raman Spectroscopy ◽  
High K ◽  
Highly Sensitive ◽  
Oncological Diseases

Application of micro-Raman spectroscopy for the monitoring of quality of high-k (h-k) dielectric protective layer deposition onto the surface of a nanowire (NW) chip has been demonstrated. A NW chip based on silicon-on-insulator (SOI) structures, protected with a layer of high-k dielectric ((h-k)-SOI-NW chip), has been employed for highly sensitive detection of microRNA (miRNA) associated with oncological diseases. The protective dielectric included a 2-nm-thick Al2O3 surface layer and a 8-nm-thick HfO2 layer, deposited onto a silicon SOI-NW chip. Such a chip had increased time stability upon operation in solution, as compared with an unprotected SOI-NW chip with native oxide. The (h-k)-SOI-NW biosensor has been employed for the detection of DNA oligonucleotide (oDNA), which is a synthetic analogue of miRNA-21 associated with oncological diseases. To provide biospecificity of the detection, the surface of (h-k)-SOI-NW chip was modified with oligonucleotide probe molecules (oDVA probes) complementary to the sequence of the target biomolecule. Concentration sensitivity of the (h-k)-SOI-NW biosensor at the level of DL~10−16 M has been demonstrated.

Non-Destructive Assessment of Thin Film Stresses and Crystal Qualify of Silicon on Insulator Materials with Raman Spectroscopy

1990 ◽  
Vol 188 ◽  
Author(s):  
Ingrid De Wolf ◽  
Jan Vanhellemont ◽  
Herman E. Maes
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Raman Spectroscopy ◽  
Cross Section ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
Micro Raman Spectroscopy ◽  
Transmission Electron ◽  
Non Destructive ◽  
Zone Melt

ABSTRACTMicro Raman spectroscopy (RS) is used to study the crystalline quality and the stresses in the thin superficial silicon layer of Silicon-On-Insulator (SO) materials. Results are presented for SIMOX (Separation by IMplanted OXygen) and ZMR (Zone Melt Recrystallized) substrates. Both as implanted and annealed SIMOX structures are investigated. The results from the as implanted structures are correlated with spectroscopic ellipsometry (SE) and cross-section transmission electron microscopy (TEM) analyses on the same material. Residual stress in ZMR substrates is studied in low- and high temperature gradient regions.

scholarly journals SOI-Nanowire Biosensor for the Detection of Glioma-Associated miRNAs in Plasma

Chemosensors ◽  
2020 ◽  
Vol 8 (4) ◽  
pp. 95
Author(s):  
Kristina A. Malsagova ◽  
Tatyana O. Pleshakova ◽  
Rafael A. Galiullin ◽  
Andrey F. Kozlov ◽  
Tatyana S. Romanova ◽  
...  
Keyword(s):  
Elevated Level ◽  
Silicon Nanowire ◽  
Silicon On Insulator ◽  
Sensor Chip ◽  
Concentration Limit ◽  
Synthetic Analogue ◽  
Oligonucleotide Probes ◽  
System A ◽  
Highly Sensitive ◽  
Oligonucleotide Detection

Herein, we report the development of a highly sensitive nanotechnology-based system—silicon-on-insulator nanowire biosensor for the revelation of microRNAs (miRNAs), associated with the development of glioma in the human. In this system, a sensor chip, bearing an array of silicon nanowire structures, is employed. The sensor chip is fabricated using a top-down technology. In our experiments reported herein, we demonstrated the detection of DNA oligonucleotide (oDNA), which represents a synthetic analogue of microRNA-363 associated with the development of glioma. To provide biospecific detection of the target oligonucleotides, the surface of the nanowire structures is modified with oligonucleotide probes; the latter are complementary to the target ones. The concentration limit of the target oligonucleotide detection, attained using our nanowire biosensor, is at the level of DL~10−17 M. The revelation of the elevated level of glioma-associated miRNA in plasma is also demonstrated.

Investigating the Stress and Crystal Quality of AlN Air-Bridges through Micro-Raman Scattering

2008 ◽  
Vol 1139 ◽  
Author(s):  
Sridhar Kuchibhatla ◽  
L. E. Rodak ◽  
D. Korakakis
Keyword(s):  
Raman Spectroscopy ◽  
Raman Spectrum ◽  
Surface Texture ◽  
Growth Analysis ◽  
Wet Etching ◽  
Phonon Modes ◽  
Micro Raman Spectroscopy ◽  
Aln Film ◽  
Clear Change

AbstractIn this work, we report the post-growth investigation of the microstructure and stress in the AlN films grown on patterned amorphous dielectrics through micro-Raman spectroscopy. The surface texture of AlN/SiO2 structures was characterized by randomly oriented crystallites typical of polycrystalline films. Post growth analysis of the AlN/SiO2 structures using micro Raman spectroscopy did not reveal phonon modes corresponding to wurtzite AlN. The presence of randomly oriented crystallites with a possibility of oxidized Al phase in the AlN film could have suppressed the appearance of wurtzite AlN phonon peaks in the Raman spectrum. Profiling the stress and the microstructure of AlN/SiO2 structures across the width of the bridges is thus limited by these factors. AlN structures on SiO2 when subjected to wet etching in buffered HF (10:1) showed a clear change in texture. Micro-raman spectroscopy on the etched areas revealed wurtzite AlN like phonon modes. The appearance of wurtzite AlN modes can be attributed to the removal of oxidized Al phase in the AlN film after wet etching.

Characterization of Structural Quality of Bonded Silicon-On-Insulator Wafers by Spectroscopic Ellipsometry and Raman Spectroscopy

2004 ◽  
Vol 809 ◽  
Author(s):  
N. V. Nguyen ◽  
J. E. Maslar ◽  
Jin-Yong Kim ◽  
Jin-Ping Han ◽  
Jin-Won Park ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Dielectric Function ◽  
Spectroscopic Ellipsometry ◽  
Crystalline Silicon ◽  
Silicon On Insulator ◽  
Structural Defects ◽  
Structural Quality ◽  
Ellipsometry Data

ABSTRACTThe crystalline quality of bonded Silicon-On-Insulator (SOI) wafers were examined by spectroscopic ellipsometry and Raman spectroscopy. Both techniques detect slight structural defects in the SOI layer. If a pure crystalline silicon dielectric function is assumed for the SOI layer, the spectroscopic ellipsometry data fitting yields an unacceptably large discrepancy between the experimental and modeled data. The best fits for all the samples result in a dielectric function of the SOI layer that consists of a physical mixture of crystalline silicon and about 4 % to 7 % of amorphous silicon. Using such a mixture indicates that there are still some defects in the SOI layer when compared with the high-quality bulk crystalline silicon. This observation is further supported by Raman spectroscopy measurements. The Raman spectra of all SOI samples exhibit a feature at about 495 cm−1 that is not observed in the crystalline silicon spectrum. Features similar to the 495 cm−1 feature have been reported in the literature and attributed to dislocations or faults in the silicon lattice.

Crystalline quality of bonded silicon-on-insulator characterized by spectroscopic ellipsometry and Raman spectroscopy

2004 ◽  
Vol 85 (14) ◽  
pp. 2765-2767 ◽  
Author(s):  
N. V. Nguyen ◽  
J. E. Maslar ◽  
Jin-Yong Kim ◽  
Jin-Ping Han ◽  
Jin-Won Park ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Spectroscopic Ellipsometry ◽  
Silicon On Insulator ◽  
Crystalline Quality

Analysis of grain orientation and intergrain properties by micro-Raman spectroscopy in YBa2Cu3O7−x thin films

2000 ◽  
Vol 15 (5) ◽  
pp. 1069-1075 ◽  
Author(s):  
O. Martínez ◽  
J. Jiménez ◽  
D. Chambonnet ◽  
C. Belouet
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Grain Boundaries ◽  
Grain Orientation ◽  
Structural Changes ◽  
Large Angle ◽  
Lateral Resolution ◽  
Micro Raman Spectroscopy ◽  
High Lateral Resolution

Superconducting YBa2Cu3O7−x (YBCO) thin films grown by pulser-laser-assisted deposition were studied by micro-Raman spectroscopy. This technique was used to estimate the epitaxial quality of the films in terms of the presence of c-axis- and a-axis-oriented areas. The advantage of micro-Raman spectroscopy is its high lateral resolution, and this was used to study the homogeneity of the films at submicrometric level. Local structural changes from a large number of intergrain regions were revealed by changes of the Raman parameters. For example, the aggregation of a-axis-oriented grains formed needle-shaped macrograins. Micro-Raman measurements suggest that these grains were seeded at large-angle grain boundaries in c-axis-oriented areas.

EPITAXIAL LATERAL OVERGROWTH OF GaN ON SILICON-ON-INSULATOR

2009 ◽  
Vol 23 (15) ◽  
pp. 1881-1887 ◽  
Author(s):  
BO ZHANG ◽  
JING CHEN ◽  
XI WANG ◽  
AIMIN WU ◽  
JIEXIN LUO ◽  
...  
Keyword(s):  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon On Insulator ◽  
Epitaxial Lateral Overgrowth ◽  
Micro Raman Spectroscopy ◽  
Lateral Overgrowth ◽  
Transmission Electron ◽  
Single Process ◽  
Soi Substrates

From a single process, GaN layers were laterally overgrown on maskless stripe-patterned (111) silicon-on-insulator (SOI) substrates by metalorganic chemical vapor deposition. The influence of stress on the behavior of dislocations at the coalescence during growth was observed using transmission electron microscopy (TEM). Improvement of the crystalline quality of the GaN layer was demonstrated by TEM and micro-Raman spectroscopy. Furthermore, the benefits of SOI substrates for GaN growth are also discussed.

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