Investigating the Stress and Crystal Quality of AlN Air-Bridges through Micro-Raman Scattering

2008 ◽  
Vol 1139 ◽  
Author(s):  
Sridhar Kuchibhatla ◽  
L. E. Rodak ◽  
D. Korakakis
Keyword(s):  
Raman Spectroscopy ◽  
Raman Spectrum ◽  
Surface Texture ◽  
Growth Analysis ◽  
Wet Etching ◽  
Phonon Modes ◽  
Micro Raman Spectroscopy ◽  
Aln Film ◽  
Clear Change

AbstractIn this work, we report the post-growth investigation of the microstructure and stress in the AlN films grown on patterned amorphous dielectrics through micro-Raman spectroscopy. The surface texture of AlN/SiO2 structures was characterized by randomly oriented crystallites typical of polycrystalline films. Post growth analysis of the AlN/SiO2 structures using micro Raman spectroscopy did not reveal phonon modes corresponding to wurtzite AlN. The presence of randomly oriented crystallites with a possibility of oxidized Al phase in the AlN film could have suppressed the appearance of wurtzite AlN phonon peaks in the Raman spectrum. Profiling the stress and the microstructure of AlN/SiO2 structures across the width of the bridges is thus limited by these factors. AlN structures on SiO2 when subjected to wet etching in buffered HF (10:1) showed a clear change in texture. Micro-raman spectroscopy on the etched areas revealed wurtzite AlN like phonon modes. The appearance of wurtzite AlN modes can be attributed to the removal of oxidized Al phase in the AlN film after wet etching.

Micro-Raman Spectroscopy Study of 32 Kinds of Chinese Coals: Second-Order Raman Spectrum and Its Correlations with Coal Properties

2017 ◽  
Vol 31 (8) ◽  
pp. 7884-7893 ◽  
Author(s):  
Jun Xu ◽  
Hao Tang ◽  
Sheng Su ◽  
Jiawei Liu ◽  
Hengda Han ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Raman Spectrum ◽  
Second Order ◽  
Spectroscopy Study ◽  
Micro Raman Spectroscopy ◽  
Coal Properties

Study of Highly Strained Single InAs−In0.53Ga0.47As Quantum Wells from Phonon Modes by Raman Scattering

1995 ◽  
Vol 379 ◽  
Author(s):  
L. G. Quagliano ◽  
D. Orani ◽  
A. Ricci ◽  
M. G. Simeone ◽  
M. R. Bruni
Keyword(s):  
Raman Spectroscopy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Phonon Mode ◽  
Phonon Modes ◽  
Long Wavelength ◽  
Raman Study ◽  
Highly Strained ◽  
Inp Substrates

ABSTRACTWe report Raman study of highly strained single InAs−In0.53Ga0.47As quantum wells grown by molecular beam epitaxy (MBE) on InP substrates with the well thickness between 4 and 15 monolayers. We have used Raman spectroscopy to characterize quality, disorder and strain of these structures which are of considerable interest for long wavelength optical communications.In the Raman spectra we have observed an intense narrow line corresponding to the GaAslike LO mode of In0.53Ga0.47As cap layer and a narrow peak due to the LO phonon mode of the InAs layer. These dominant and sharp features characterize the high homogeneity of our samples. In addition to these features we have observed the appearance of distinct peaks with the increase of the InAs layer thickness. In our opinion the presence of these modes is indicative of a slight deterioration of the structural perfection of the sample with the increase of the well thickness. Our investigation shows the ability of Raman spectroscopy to describe these systems and the good quality of our structures.

The Structural Characteristics of CIS Thin Films Prepared by Electro-Deposited Method

2013 ◽  
Vol 818 ◽  
pp. 88-91
Author(s):  
Kun Liu ◽  
Ji Sheng Yang ◽  
Rui Li ◽  
Wei Peng ◽  
Shi Pan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Raman Spectroscopy ◽  
Raman Spectrum ◽  
Structural Characteristics ◽  
X Ray Diffraction ◽  
Electro Deposition ◽  
X Ray ◽  
Micro Raman Spectroscopy ◽  
Deposition Technology

The properties of the absorber layer of solar cell CuInSe2(CIS) thin film made by electro-depostied method were researched in this article. Different concentration of reactant and voltage was applied to prepare the CIS film. The micro-Raman spectroscopy and X-ray diffraction (XRD) of CIS film was carried out. A correlation between the linewidth A1 mode of Raman spectrum and the XRD line and the voltage of electro-deposition technology was found.

Analysis of grain orientation and intergrain properties by micro-Raman spectroscopy in YBa2Cu3O7−x thin films

2000 ◽  
Vol 15 (5) ◽  
pp. 1069-1075 ◽  
Author(s):  
O. Martínez ◽  
J. Jiménez ◽  
D. Chambonnet ◽  
C. Belouet
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Grain Boundaries ◽  
Grain Orientation ◽  
Structural Changes ◽  
Large Angle ◽  
Lateral Resolution ◽  
Micro Raman Spectroscopy ◽  
High Lateral Resolution

Superconducting YBa2Cu3O7−x (YBCO) thin films grown by pulser-laser-assisted deposition were studied by micro-Raman spectroscopy. This technique was used to estimate the epitaxial quality of the films in terms of the presence of c-axis- and a-axis-oriented areas. The advantage of micro-Raman spectroscopy is its high lateral resolution, and this was used to study the homogeneity of the films at submicrometric level. Local structural changes from a large number of intergrain regions were revealed by changes of the Raman parameters. For example, the aggregation of a-axis-oriented grains formed needle-shaped macrograins. Micro-Raman measurements suggest that these grains were seeded at large-angle grain boundaries in c-axis-oriented areas.

Micro-Raman Spectroscopy In The Characterization Of Biomedical Materials

1999 ◽  
Vol 5 (S2) ◽  
pp. 50-51
Author(s):  
Frank K. Huang
Keyword(s):  
Raman Spectroscopy ◽  
Raman Spectrum ◽  
Raman Effect ◽  
Silicone Elastomer ◽  
Biomedical Materials ◽  
Micro Raman Spectroscopy ◽  
Polymeric Biomaterials ◽  
Specific Material ◽  
Thin Polyethylene

Summaryμ-Raman spectroscopy has been used to characterize two types of biomedical materials: a multilayer, silicone elastomer used in implants, and a thin, polyethylene layer used in a medical device. Raman spectroscopy is the collection of light inelastically scattered by a material or compound. The technique is based on the Raman effect, which involves the interaction of light and matter. When light strikes a material, the light is inelastically scattered and is frequency shifted according to the vibrations of the chemical-functional groups and/or macrostructure of the material. The result is a Raman spectrum of the material that can be interpreted to determine the characteristics of the material, including identity, macrostructure, and quantity of a specific material within a matrix.The application of Raman spectroscopy in the characterization of polymers has been well established. The technique has been used to determine the chemical composition and morphology of polymers. Raman spectroscopy could therefore be a powerful tool for characterizing polymeric biomaterials.The silicone elastomer characterized in this work consisted of three layers: polydimethylsiloxane, polydimethyl/polydiphenyl siloxane, and polydimethylsiloxane.

scholarly journals Comprehensive Raman study of orthorhombic κ/ε-Ga2O3 and the impact of rotational domains

2021 ◽  
Author(s):  
Benjamin M. Janzen ◽  
Piero Mazzolini ◽  
Roland Gillen ◽  
Vivien F. S. Peltason ◽  
Linus P. Grote ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Perturbation Theory ◽  
Gallium Oxide ◽  
Density Functional ◽  
Phonon Modes ◽  
Micro Raman Spectroscopy ◽  
Density Functional Perturbation Theory ◽  
Raman Study ◽  
The Impact ◽  
Raman Active Phonon

The Raman-active phonon modes of orthorhombic gallium oxide (κ/ε-Ga2O3) are investigated by combination of polarized micro-Raman spectroscopy and density functional perturbation theory (DFPT) calculations.

Micro-Raman spectroscopy characterization of glass/refractory interfaces: A tool to improve the quality of the industrial glass production

2008 ◽  
Vol 39 (2) ◽  
pp. 192-198 ◽  
Author(s):  
Pietro Galinetto ◽  
Roberto Falcone ◽  
Elisabetta Negri ◽  
Marco Verità
Keyword(s):  
Raman Spectroscopy ◽  
Glass Production ◽  
Industrial Glass ◽  
Micro Raman Spectroscopy

The Study of Morphological Structure and Raman Spectra of 3C-SiC Membranes

2014 ◽  
Vol 554 ◽  
pp. 66-70
Author(s):  
Fazli Mohd Nashrul Nasir ◽  
Patrick W. Leech ◽  
Geoff K. Reeves ◽  
Brett C. Johnson ◽  
Philip Tanner ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Electron Microscope ◽  
Morphological Structure ◽  
Wet Etching ◽  
Membrane Properties ◽  
Si Substrate ◽  
High Quality ◽  
Membrane Fabrication ◽  
Scanning Electron

In this paper, membranes of 3C-SiC with dimensions up to 10 mm x 15 mm2 have been fabricated in epitaxial 3C-SiC/ Si wafers by the means of photolithography, reactive ion etching of 3C-SiC and wet etching of Si. Scanning electron microscope (SEM) micrographs were used to observe the structure of the membrane and the wall formed by the Si wet etching. The quality of the 3C-SiC membranes were observed using Raman Spectroscopy. The remains of <111> Si substrate which was unetched during the Si wet etching were presented with the formation of microstructure defects which showed distinct peaks in comparison to the high quality 3C-SiC membranes at different position. Here, the effect of the membrane fabrication procedures to the 3C-SiC membrane properties especially the morphological structure and its Raman characteristics is discussed in detail.

scholarly journals Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection

Biosensors ◽  
2018 ◽  
Vol 8 (3) ◽  
pp. 72 ◽  
Author(s):  
Kristina Malsagova ◽  
Tatyana Pleshakova ◽  
Andrey Kozlov ◽  
Ivan Shumov ◽  
Mikhail Ilnitskii ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Protective Layer ◽  
Silicon On Insulator ◽  
Native Oxide ◽  
Synthetic Analogue ◽  
Micro Raman Spectroscopy ◽  
High K ◽  
Highly Sensitive ◽  
Oncological Diseases

Application of micro-Raman spectroscopy for the monitoring of quality of high-k (h-k) dielectric protective layer deposition onto the surface of a nanowire (NW) chip has been demonstrated. A NW chip based on silicon-on-insulator (SOI) structures, protected with a layer of high-k dielectric ((h-k)-SOI-NW chip), has been employed for highly sensitive detection of microRNA (miRNA) associated with oncological diseases. The protective dielectric included a 2-nm-thick Al2O3 surface layer and a 8-nm-thick HfO2 layer, deposited onto a silicon SOI-NW chip. Such a chip had increased time stability upon operation in solution, as compared with an unprotected SOI-NW chip with native oxide. The (h-k)-SOI-NW biosensor has been employed for the detection of DNA oligonucleotide (oDNA), which is a synthetic analogue of miRNA-21 associated with oncological diseases. To provide biospecificity of the detection, the surface of (h-k)-SOI-NW chip was modified with oligonucleotide probe molecules (oDVA probes) complementary to the sequence of the target biomolecule. Concentration sensitivity of the (h-k)-SOI-NW biosensor at the level of DL~10−16 M has been demonstrated.

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