scholarly journals Highly Conductive Zinc Oxide Based Transparent Conductive Oxide Films Prepared Using RF Plasma Sputtering Under Reducing Atmosphere

Coatings ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 472
Author(s):  
Ali Salimian ◽  
Abul Hasnath ◽  
Lorna Anguilano ◽  
Uchechukwu Onwukwe ◽  
Arjang Aminishahsavarani ◽  
...  

The spectral properties and colour functions of a radio frequency (RF)-based sputtering plasma source was monitored during consecutive sputter deposition of zinc doped indium oxide (IZO) thin films under argon and argon/hydrogen mix. The effect of target exposure to the hydrogen gas on charge density/mobility and spectral transmittance of the deposited films was investigated. We demonstrate that consecutive exposure to the hydrogen gas during the deposition process progressively affects the properties of thin films with a certain degree of continuous improvement in electrical conductivity while demonstrating that reverting to only argon from argon/ hydrogen mix follows a complex pathway, which has not been reported previously in such detail to our knowledge. We then demonstrate that this effect can be used to prepare highly conductive zinc oxide thin films without indium presence and as such eliminating the need for the expensive indium addition. We shall demonstrate that complexity observed in emission spectra can be simply identified by monitoring the colour of the plasma through its colour functions, making this technique a simple real-time monitoring method for the deposition process.

2020 ◽  
Vol 9 (5) ◽  
pp. 10624-10634
Author(s):  
Siti Nor Aliffah Mustaffa ◽  
Nurul Assikin Ariffin ◽  
Ahmed Lateef Khalaf ◽  
Mohd. Hanif Yaacob ◽  
Nizam Tamchek ◽  
...  

1999 ◽  
Vol 593 ◽  
Author(s):  
T. Thärigen ◽  
V. Riede ◽  
G. Lippold ◽  
E. Hartmann ◽  
R. Hesse ◽  
...  

ABSTRACTCarbon silicon nitride (CSixNy), and carbon boron nitride (CBxNy) thin films have been grown by pulsed laser deposition (PLD) of various carbon (silicon/boron) (nitride) targets using an additional nitrogen RF plasma source on [100] oriented silicon substrates without additional heating. The CSixNy and CBxNy thin films were amorphous and showed nano hardness up to 23 GPa compared to 14 GPa for silicon and maximum nitrogen content of 30 at%. The maximum nanohardness was achieved for 10% Si and 10% B content in the films. The lower hardness of this films compared to the nanohardness of 30-50 GPa of DLC films indicates a lower amount of covalent carbon-nitrogen bonding in the films. However, in contrast to DLC films, the CSixNy and CBxNy films can be grown to thickness above 3 μm due to lower internal compressive stress. XPS of CSixNy and CBxNy film surfaces shows clear correlation of binding energy and intensity of N ls, C ls, and Si 2p peaks to composition of the PLD-targets and to nitrogen flow through plasma source, indicating soft changes of binding structure due to variation of PLD parameters. The results demonstrate the capability of the plasma assisted PLD process to deposit hard amorphous CSixNy, and CBxNy thin films with adjustable properties.


2017 ◽  
Vol 13 (4) ◽  
pp. 559-562 ◽  
Author(s):  
Alister Genndi Willis ◽  
Saharudin Haron

Composite polymer consisting polyaniline (PANI) and zinc oxide (ZnO) were synthesized via oxidative polymerization of aniline. The composite PANI thin films were characterized by FTIR spectroscopy and their optical properties towards hydrogen gas were investigated using UV-vis spectroscopy. The FTIR spectra obtained verified the synthesis PANI/ZnO composite. From the experimental results, it was found that with increasing zinc oxide content in the composite cause the transmittance to decrease. The transmittance of the thin films slightly increased after exposed to hydrogen gas. PANI-ZnO (10%w.t.) exhibited best response compared to other composition with the highest transmittance peak difference of 11.4%. 


2012 ◽  
Vol 112 (1) ◽  
pp. 014907 ◽  
Author(s):  
L. García-Gancedo ◽  
J. Pedrós ◽  
Z. Zhu ◽  
A. J. Flewitt ◽  
W. I. Milne ◽  
...  

2005 ◽  
Vol 245 (1-4) ◽  
pp. 202-207 ◽  
Author(s):  
Dhananjay S. Bodas ◽  
A.B. Mandale ◽  
S.A. Gangal

2020 ◽  
Vol 990 ◽  
pp. 330-336
Author(s):  
Gulnar Sugurbekova ◽  
Yerzhigit Sugurbekov ◽  
Gulzat Demeuova ◽  
Oral Ualibek ◽  
Aliya Kurbanova ◽  
...  

Zinc oxide (ZnO) is an interesting inexpensive transparent conductive oxide for use as a transport layer in multilayer solar cells. We present the results of a study of the effect of aluminum doping on the structure of 50-65 nm thin films of zinc oxide obtained by atomic layer deposition (ALD) on different substrates (glass, sapphire with a-plane and c-plane orientations). Analysis of thin films by IR spectra and X-ray diffraction showed the effect of doping on the crystallographic texture of films grown by the ALD method by comparing substrates of simple glass, c-plane Al2O3 and a-plane Al2O3. We found that when doping zinc oxide, the orientation of the substrate plays a substantial role, which affects the mechanism of interaction of zinc oxide with a doping agent, leading to changes in the structure and properties of ZnO due to the interaction between ZnO molecules and water to form a Zn-O-H bond. Doping with aluminum leads to a strain stress, resulting in distortion of the structure and a decrease in the concentration of oxygen vacancies. This is turn facilitates the flow of water molecules into the interlayer space and an increase in the density of the positive charge on the metal cation, which leads to an increase in the coordination number, i.e. to an increase in the number of hydroxyl groups.


1989 ◽  
Vol 169 ◽  
Author(s):  
Jing Zhao ◽  
Henry O. Marcy ◽  
Lauren M. Tonge ◽  
Bruce W. Wessels ◽  
Tobin J. Marks ◽  
...  

AbstractWe report here a plasma‐enhanced organometallic chemical vapor deposition process for the preparation of YBa2Cu3O7‐x thin films using two rf plasma coupling configurations. For the films grown under a direct plasma glow, the YBa2Cu3O7‐x phase is not found in the as‐deposited state. However, by employing plasma‐activated nitrous oxide as the reactant gas, superconducting YBa2Cu3O7‐x films having a low carbon content and a mirror‐like surface have been prepared in‐situ at a substrate temperature of 610°C using an organometallic chemical vapor deposition process.


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