scholarly journals Comparison of the Growth and Thermal Properties of Nonwoven Polymers after Atomic Layer Deposition and Vapor Phase Infiltration

Coatings ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1028
Author(s):  
Laura Keskiväli ◽  
Pirjo Heikkilä ◽  
Eija Kenttä ◽  
Tommi Virtanen ◽  
Hille Rautkoski ◽  
...  
Keyword(s):  
Thermal Properties ◽  
Electron Microscope ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Scanning Transmission Electron Microscope ◽  
Scanning Calorimetry ◽  
Polymeric Surfaces ◽  
Transmission Electron ◽  
Layer Deposition ◽  
Scanning Transmission

The growth mechanism of Atomic Layer Deposition (ALD) on polymeric surfaces differs from growth on inorganic solid substrates, such as silicon wafer or glass. In this paper, we report the growth experiments of Al2O3 and ZnO on nonwoven poly-L-lactic acid (PLLA), polyethersulphone (PES) and cellulose acetate (CA) fibres. Material growth in both ALD and infiltration mode was studied. The structures were examined with a scanning electron microscope (SEM), scanning transmission electron microscope (STEM), attenuated total reflectance-fourier-transform infrared spectroscopy (ATR-FTIR) and 27Al nuclear magnetic resonance (NMR). Furthermore, thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC) analysis were used to explore the effect of ALD deposition on the thermal properties of the CA polymer. According to the SEM, STEM and ATR-FTIR analysis, the growth of Al2O3 was more uniform than ZnO on each of the polymers studied. In addition, according to ATR-FTIR spectroscopy, the infiltration resulted in interactions between the polymers and the ALD precursors. Thermal analysis (TGA/DSC) revealed a slower depolymerization process and better thermal resistance upon heating both in ALD-coated and infiltrated fibres, more pronounced on the latter type of structures, as seen from smaller endothermic peaks on TA.

scholarly journals A Thermodynamic Investigation of Ni on Thin-Film Titanates (ATiO3)

Inorganics ◽  
2020 ◽  
Vol 8 (12) ◽  
pp. 69
Author(s):  
Chao Lin ◽  
Alexandre C. Foucher ◽  
Eric A. Stach ◽  
Raymond J. Gorte
Keyword(s):  
Atomic Layer Deposition ◽  
Coulometric Titration ◽  
Equilibrium Constants ◽  
Atomic Layer ◽  
Co2 Reforming ◽  
Co2 Reforming Of Ch4 ◽  
Transmission Electron ◽  
Layer Deposition ◽  
Ni Oxidation ◽  
Scanning Transmission

Thin, ~1-nm films of CaTiO3, SrTiO3, and BaTiO3 were deposited onto MgAl2O4 by Atomic Layer Deposition (ALD) and then studied as catalyst supports for ~5 wt % of Ni that was added to the perovskite thin films by Atomic Layer Deposition. Scanning Transmission Electron Microscopy demonstrated that both the Ni and the perovskites uniformly covered the surface of the support following oxidation at 1073 K, even after redox cycling, but large Ni particles formed following a reduction at 1073 K. When compared to Ni/MgAl2O4, the perovskite-containing catalysts required significantly higher temperatures for Ni reduction. Equilibrium constants for Ni oxidation, as determined from Coulometric Titration, indicated that the oxidation of Ni shifted to lower PO2 on the perovskite-containing materials. Based on Ni equilibrium constants, Ni interactions are strongest with CaTiO3, followed by SrTiO3 and BaTiO3. The shift in the equilibrium constant was shown to cause reversible deactivation of the Ni/CaTiO3/MgAl2O4 catalyst for CO2 reforming of CH4 at high CO2 pressures, due to the oxidation of the Ni.

scholarly journals Ultra-Thin Integrated ALD Al2O3 Electron-Transparent Windows for TEM Nanoreactor Applications

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 1001
Author(s):  
Levar Goossen ◽  
Jia Wei ◽  
Gregory Pandraud ◽  
Violeta Prodanovic ◽  
Pasqualina M. Sarro
Keyword(s):  
Electron Microscope ◽  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Transmission Electron Microscope ◽  
Atomic Layer ◽  
Transmission Electron ◽  
Layer Deposition ◽  
Transparent Windows ◽  
First Time

This paper presents for the first time, the integration of ultra-thin (<10 nm) atomic layer deposition (ALD) aluminum oxide (Al2O3) membranes as electron transparent windows (ETWs) for transmission electron microscope (TEM) nanoreactor applications. The process was successfully implemented and tested in a TEM. ETWs with thicknesses down to 5 and 10 nm were used to image nanoparticles (NPs) in a 120 keV TEM and 200 keV TEM respectively.

scholarly journals “Intelligent” Pt Catalysts Based on Thin LaCoO3 Films Prepared by Atomic Layer Deposition

Inorganics ◽  
2019 ◽  
Vol 7 (9) ◽  
pp. 113 ◽  
Author(s):  
Xinyu Mao ◽  
Alexandre C. Foucher ◽  
Eric A. Stach ◽  
Raymond J. Gorte
Keyword(s):  
Atomic Layer Deposition ◽  
Co Adsorption ◽  
Atomic Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Highly Active ◽  
Transmission Electron ◽  
Layer Deposition ◽  
Scanning Transmission ◽  
Water Gas

LaCoO3 films were deposited onto MgAl2O4 powders by atomic layer deposition (ALD) and then used as catalyst supports for Pt. X-ray diffraction (XRD) showed that the 0.5 nm films exhibited a perovskite structure after redox cycling at 1073 K, and scanning transmission electron microscopy and elemental mapping via energy-dispersive X-ray spectroscopy (STEM/EDS) data demonstrated that the films covered the substrate uniformly. Catalysts prepared with 3 wt % Pt showed that the Pt remained well dispersed on the perovskite film, even after repeated oxidations and reductions at 1073 K. Despite the high Pt dispersion, CO adsorption at room temperature was negligible. Compared with conventional Pt on MgAl2O4, the reduced forms of the LaCoO3-containing catalyst were highly active for the CO oxidation and water gas shift (WGS) reactions, while the oxidized catalysts showed much lower activities. Surprisingly, the reduced catalysts were much less active than the oxidized catalysts for toluene hydrogen. Catalysts prepared from thin films of Co3O4 or La2O3 exhibited properties more similar to Pt/MgAl2O4. Possible reasons for how LaCoO3 affects properties are discussed.

The High Resolution Scanning Transmission Electron Microscope

1974 ◽  
Vol 32 ◽  
pp. 316-317
Author(s):  
A. V. Crewe
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
High Vacuum ◽  
Scanning Transmission Electron Microscope ◽  
Ultra High Vacuum ◽  
Resolving Power ◽  
Imaging Characteristics ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
The Moment

The high resolution STEM is now a fact of life. I think that we have, in the last few years, demonstrated that this instrument is capable of the same resolving power as a CEM but is sufficiently different in its imaging characteristics to offer some real advantages.It seems possible to prove in a quite general way that only a field emission source can give adequate intensity for the highest resolution^ and at the moment this means operating at ultra high vacuum levels. Our experience, however, is that neither the source nor the vacuum are difficult to manage and indeed are simpler than many other systems and substantially trouble-free.

Development of 200 kV Scanning-Transmission Electron Microscope

1974 ◽  
Vol 32 ◽  
pp. 410-411
Author(s):  
H. Koike ◽  
S. Sakurai ◽  
K. Ueno ◽  
M. Watanabe
Keyword(s):  
Electron Microscopy ◽  
Electron Microscope ◽  
Scanning Transmission Electron Microscope ◽  
The Other ◽  
Morphological Observation ◽  
Magnetic Domains ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Backscattered Electron ◽  
Increasing Demand

In recent years, there has been increasing demand for higher voltage SEMs, in the field of surface observation, especially that of magnetic domains, dislocations, and electron channeling patterns by backscattered electron microscopy. On the other hand, the resolution of the CTEM has now reached 1 ∼ 2Å, and several reports have recently been made on the observation of atom images, indicating that the ultimate goal of morphological observation has beem nearly achieved.

To What Extent are Inelastically Scattered Electrons Useful in the Stem?

1973 ◽  
Vol 31 ◽  
pp. 286-287 ◽  
Author(s):  
H. Rose
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Electron Correlation ◽  
Quantum Noise ◽  
Collection Efficiency ◽  
Scanning Transmission Electron Microscope ◽  
Electron Cloud ◽  
Scanning Time ◽  
Transmission Electron ◽  
Scanning Transmission

The scanning transmission electron microscope offers the possibility of utilizing inelastically scattered electrons. Use of these electrons in addition to the elastically scattered electrons should reduce the scanning time (dose) Which is necessary to keep the quantum noise below a certain level. Hence it should lower the radiation damage. For high resolution, Where the collection efficiency of elastically scattered electrons is small, the use of Inelastically scattered electrons should become more and more favorable because they can all be detected by means of a spectrometer. Unfortunately, the Inelastic scattering Is a non-localized interaction due to the electron-electron correlation, occurring predominantly at the circumference of the atomic electron cloud.

A General Method for Spectrometer Design in the Scoff Approximation

1976 ◽  
Vol 34 ◽  
pp. 538-539
Author(s):  
J. R. Fields
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Energy Analysis ◽  
Incident Beam ◽  
Scanning Transmission Electron Microscope ◽  
Chemical Identification ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
General Method

The energy analysis of electrons scattered by a specimen in a scanning transmission electron microscope can improve contrast as well as aid in chemical identification. In so far as energy analysis is useful, one would like to be able to design a spectrometer which is tailored to his particular needs. In our own case, we require a spectrometer which will accept a parallel incident beam and which will focus the electrons in both the median and perpendicular planes. In addition, since we intend to follow the spectrometer by a detector array rather than a single energy selecting slit, we need as great a dispersion as possible. Therefore, we would like to follow our spectrometer by a magnifying lens. Consequently, the line along which electrons of varying energy are dispersed must be normal to the direction of the central ray at the spectrometer exit.

Resolution in the Scanning Transmission Electron Microscope

1972 ◽  
Vol 30 ◽  
pp. 454-455
Author(s):  
M. G. R. Thomson
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Spherical Aberration ◽  
Signal To Noise Ratio ◽  
Scanning Transmission Electron Microscope ◽  
Dark Field ◽  
Objective Lens ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission

The variation of contrast and signal to noise ratio with change in detector solid angle in the high resolution scanning transmission electron microscope was discussed in an earlier paper. In that paper the conclusions were that the most favourable conditions for the imaging of isolated single heavy atoms were, using the notation in figure 1, either bright field phase contrast with β0⋍0.5 α0, or dark field with an annular detector subtending an angle between ao and effectively π/2.The microscope is represented simply by the model illustrated in figure 1, and the objective lens is characterised by its coefficient of spherical aberration Cs. All the results for the Scanning Transmission Electron Microscope (STEM) may with care be applied to the Conventional Electron Microscope (CEM). The object atom is represented as detailed in reference 2, except that ϕ(θ) is taken to be the constant ϕ(0) to simplify the integration. This is reasonable for θ ≤ 0.1 θ0, where 60 is the screening angle.

Some Quantification Problems in Parallel EELS Images

1990 ◽  
Vol 48 (2) ◽  
pp. 36-37
Author(s):  
G. Botton ◽  
G. L’Espérance ◽  
M.D. Ball ◽  
C.E. Gallerneault
Keyword(s):  
Electron Microscope ◽  
Imaging System ◽  
Signal To Noise Ratio ◽  
Scanning Transmission Electron Microscope ◽  
Acquisition Time ◽  
Thickness Variation ◽  
Transmission Electron ◽  
Distribution Of Elements ◽  
Scanning Transmission ◽  
Present Distribution

The recently developed parallel electron energy loss spectrometers (PEELS) have led to a significant reduction in spectrum acquisition time making EELS more useful in many applications in material science. Dwell times as short as 50 msec per spectrum with a PEELS coupled to a scanning transmission electron microscope (STEM), can make quantitative EEL images accessible. These images would present distribution of elements with the high spatial resolution inherent to EELS. The aim of this paper is to briefly investigate the effect of acquisition time per pixel on the signal to noise ratio (SNR), the effect of thickness variation and crystallography and finally the energy stability of spectra when acquired in the scanning mode during long periods of time.The configuration of the imaging system is the following: a Gatan PEELS is coupled to a CM30 (TEM/STEM) electron microscope, the control of the spectrometer and microscope is performed through a LINK AN10-85S MCA which is interfaced to a IBM RT 125 (running under AIX) via a DR11W line.

Secondary electron imaging of YBa2Cu3O7-x high-Tc superconductors in Scanning Transmission Electron Microscope

1989 ◽  
Vol 47 ◽  
pp. 684-685
Author(s):  
D. R. Liu ◽  
D. B. Williams
Keyword(s):  
Electron Microscope ◽  
Secondary Electron ◽  
Scanning Transmission Electron Microscope ◽  
Superconducting Phase ◽  
Contrast Imaging ◽  
High Tc ◽  
Bright Contrast ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Electron Imaging

The secondary electron imaging technique in a scanning electron microscope (SEM) has been used first by Millman et al. in 1987 to distinguish between the superconducting phase and the non-superconducting phase of the YBa2Cu3O7-x superconductors. They observed that, if the sample was cooled down below the transition temperature Tc and imaged with secondary electrons, some regions in the image would show dark contrast whereas others show bright contrast. In general, the contrast variation of a SEM image is the variation of the secondary electron yield over a specimen, which in turn results from the change of topography and conductivity over the specimen. Nevertheless, Millman et al. were able to demonstrate with their experimental results that the dominant contrast mechanism should be the conductivity variation and that the regions of dark contrast were the superconducting phase whereas the regions of bright contrast were the non-superconducting phase, because the latter was a poor conductor and consequently, the charge building-up resulted in high secondary electron emission. This observation has since aroused much interest amoung the people in electron microscopy and high Tc superconductivity. The present paper is the preliminary report of our attempt to carry out the secondary electron imaging of this material in a scanning transmission electron microscope (STEM) rather than in a SEM. The advantage of performing secondary electron imaging in a TEM is obvious that, in a TEM, the spatial resolution is higher and many more complementary techniques, e.g, diffraction contrast imaging, phase contrast imaging, electron diffraction and various microanalysis techniques, are available.

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