scholarly journals Study the Passivation Characteristics of Microwave Annealing Applied to APALD Deposited Al2O3 Thin Film

Coatings ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1450
Author(s):  
Yu-Chun Huang ◽  
Ricky Wenkuei Chuang ◽  
Keh-Moh Lin ◽  
Tsung-Chieh Wu
Keyword(s):  
Operating Cost ◽  
Atomic Layer ◽  
Film Deposition ◽  
Vacuum Equipment ◽  
Passivation Film ◽  
Layer Deposition ◽  
Film Deposition Rate ◽  
Short Time ◽  
Deposited Film ◽  
Al2o3 Thin Film

In this study, a self-developed atmospheric pressure atomic layer deposition (APALD) system is used to deposit Al2O3 passivation film, along with the use of precursor combinations of Al(CH3)3/H2O to improve its passivation characteristics through a short-time microwave post-annealing process. Comparing the unannealed and microwave-annealed samples whose temperature is controlled at 200–500 °C, APALD non-vacuum deposited film can be realized with a higher film deposition rate, which is beneficial for increasing the production throughput while at the same time reducing the operating cost of vacuum equipment at hand. Since the microwave has a greater penetration depth during the process, the resultant thermal energy provided can be spread out evenly to the entire wafer, thereby achieving the effect of rapid annealing. The film thickness is subsequently analyzed by TEM, whereas the chemical composition is verified by EDS and XPS. The negative fixed charge and interface trap density are analyzed by the C-V measurement method. Finally, the three major indicators of τeff, SRV, and IVoc are analyzed by QSSPC to duly verify the excellent passivation performance.

Characteristics of ZnO Thin Film by Atomic Layer Deposition for Film Bulk Acoustic Resonator

2004 ◽  
Vol 449-452 ◽  
pp. 977-980 ◽  
Author(s):  
S.G. Kim ◽  
Seung Boo Jung ◽  
Ji Hun Oh ◽  
H.J. Kim ◽  
Yong Hyeon Shin
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Magnetron Sputtering ◽  
Atomic Layer ◽  
Rf Magnetron Sputtering ◽  
Acoustic Resonator ◽  
Film Deposition ◽  
Layer Deposition ◽  
Film Bulk Acoustic Resonator ◽  
Film Bulk

Polycrystalline ZnO thin films were for the first time deposited on SiO2/Si (100) substrate using 2-step deposition; atomic layer deposition (ALD) and RF magnetron sputtering, for Film Bulk Acoustic Resonator (FBAR) applications. The film deposition performed in this study was composed of following two procedures; the 1st deposition was using ALD method and 2nd deposition was using RF magnetron sputtering. The ZnO buffer layer ALD films were deposited using alternating diethylzinc (DEZn)/H2O exposures and ultrahigh purity argon gas for purging. Exposure time of 1 sec and purge time of 23 sec yielded an ALD cycle time. Two-step deposited ZnO films revealed stronger c-axis preferred-orientation than one-step deposited. Therefore, this method could be applied to the FBAR applications, since FBAR devices require high quality of thin films.

scholarly journals Atomic Layer Deposition of InN Using Trimethylindium and Ammonia Plasma

2018 ◽  
Author(s):  
Petro Deminskyi ◽  
Polla Rouf ◽  
Ivan G. Ivanov ◽  
Henrik Pedersen
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Film Deposition ◽  
High Electron ◽  
Low Carbon ◽  
Carbon Level ◽  
Ammonia Plasma ◽  
Layer Deposition ◽  
Film Bulk

<div>InN is a low band gap, high electron mobility semiconductor material of interest to optoelectronics and telecommunication. Such applications require the deposition of uniform crystalline InN thin films on large area substrates, with deposition temperatures compatible with this temperature-sensitive material. As conventional chemical vapor deposition (CVD) struggles with the low temperature tolerated by the InN crystal, we hypothesize that a time-resolved, surface-controlled CVD route could offer a way</div><div>forward for InN thin film deposition. In this work, we report atomic layer deposition of crystalline, wurtzite InN thin films using trimethylindium and ammonia plasma on Si (100). We found a narrow ALD window of 240–260 °C with a deposition rate of 0.36 Å/cycle and that the flow of ammonia into the plasma is an important parameter for the crystalline quality of the film. X-ray photoelectron spectroscopy measurements shows nearly stoichiometric InN with low carbon level (< 1 atomic %) and oxygen level (< 5 atomic %) in the film bulk. The low carbon level is attributed to a favorable surface chemistry enabled by the NH<sub>3</sub> plasma. The film bulk oxygen content is attributed to oxidation upon exposure to air via grain boundary diffusion and possibly by formation of oxygen containing species in the plasma discharge.</div>

Growth Modulation of Atomic Layer Deposition of HfO2 by Combinations of H2O and O3 Reactants

2021 ◽  
Author(s):  
Byeong Guk Ko ◽  
Chi Thang Nguyen ◽  
Bonwook Gu ◽  
Rizwan Khan ◽  
Kunwoo Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Deposition Technique ◽  
Growth Modulation ◽  
Layer Deposition

Atomic layer deposition (ALD) is a thin film deposition technique based on self-saturated reactions between a precursor and reactant vacuum conditions. A typical ALD reaction consists of the first half-reaction...

scholarly journals Aluminum doped zinc oxide deposited by atomic layer deposition and its applications to micro/nano devices

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Nguyen Van Toan ◽  
Truong Thi Kim Tuoi ◽  
Naoki Inomata ◽  
Masaya Toda ◽  
Takahito Ono
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Zinc Oxide ◽  
Aspect Ratio ◽  
Dopant Concentration ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Deposited Film

AbstractThis work reports investigation on the deposition and evaluation of an aluminum-doped zinc oxide (AZO) thin film and its novel applications to micro- and nano-devices. The AZO thin film is deposited successfully by atomic layer deposition (ALD). 50 nm-thick AZO film with high uniformity is checked by scanning electron microscopy. The element composition of the deposited film with various aluminum dopant concentration is analyzed by energy-dispersive X-ray spectroscopy. In addition, a polycrystalline feature of the deposited film is confirmed by selected area electron diffraction and high-resolution transmission electron microscopy. The lowest sheet resistance of the deposited AZO film is found at 0.7 kΩ/□ with the aluminum dopant concentration at 5 at.%. A novel method employed the ALD in combination with the sacrificial silicon structures is proposed which opens the way to create the ultra-high aspect ratio AZO structures. Moreover, based on this finding, three kinds of micro- and nano-devices employing the deposited AZO thin film have been proposed and demonstrated. Firstly, nanowalled micro-hollows with an aspect ratio of 300 and a height of 15 µm are successfully produced . Secondly, micro- and nano-fluidics, including a hollow fluidic channel with a nanowall structure as a resonator and a fluidic capillary window as an optical modulator is proposed and demonstrated. Lastly, nanomechanical resonators consisting of a bridged nanobeam structure and a vertical nanomechanical capacitive resonator are fabricated and evaluated.

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