Growth Modulation of Atomic Layer Deposition of HfO2 by Combinations of H2O and O3 Reactants

2021 ◽  
Author(s):  
Byeong Guk Ko ◽  
Chi Thang Nguyen ◽  
Bonwook Gu ◽  
Rizwan Khan ◽  
Kunwoo Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Deposition Technique ◽  
Growth Modulation ◽  
Layer Deposition

Atomic layer deposition (ALD) is a thin film deposition technique based on self-saturated reactions between a precursor and reactant vacuum conditions. A typical ALD reaction consists of the first half-reaction...

Single Wafer Atomic Layer Deposition Reactor Design

2013 ◽  
Vol 668 ◽  
pp. 767-770
Author(s):  
Tao Zhou ◽  
Hua Wei Jiang ◽  
Yue Xiao ◽  
Ying Bang Yao ◽  
Bin Shan ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Heating System ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Ansys Simulation ◽  
Layer Deposition ◽  
Further Development ◽  
Deposited Films ◽  
Nanometer Thickness

Atomic layer deposition (ALD) is a very attractive ultra-thin film deposition technique. With the feature size of IC industry continues going down, ALD has received more and more attentions for its accurate sub-nanometer thickness control as well as superior uniformity and conformality. The further development of ALD technology emphasizes on both process and equipment innovations. A single-wafer bottom-heated reactor is constructed successfully, and the Al2O3 is deposited with ~2% uniformity across a 4-inch wafer. Furthermore, the gas delivery system and heating devices are studied by the combination of ANSYS simulation and experiments. These parameters that influence the uniformity and conformality of deposited films have been further optimized to obtain better performance. As a result, a new reactor with showerhead gas delivery and radiation heating system is designed.

scholarly journals SiO2 thin film growth through a pure atomic layer deposition technique at room temperature

RSC Advances ◽  
2020 ◽  
Vol 10 (31) ◽  
pp. 18073-18081
Author(s):  
D. Arl ◽  
V. Rogé ◽  
N. Adjeroud ◽  
B. R. Pistillo ◽  
M. Sarr ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Film Growth ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
Deposition Technique ◽  
Sio2 Thin Film ◽  
Layer Deposition ◽  
Atomic Layer Deposition Technique

In this study, less contaminated and porous SiO2 films were grown via ALD at room temperature.

Engineered Low Resistivity Titanium-Tantalum Nitride Films by Atomic Layer Deposition

2001 ◽  
Vol 714 ◽  
Author(s):  
Ana R. Londergan ◽  
Jereld L. Winkler ◽  
Kim Vu ◽  
Lawrence Matthysse ◽  
Thomas E. Seidel ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Composite Films ◽  
Atomic Layer ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Tantalum Nitride ◽  
Precise Control ◽  
Layer Deposition ◽  
Wide Range ◽  
Structural And Electrical Properties

ABSTRACTAtomic Layer Deposition (ALD) is an emerging ultra-thin film deposition technique for advanced microelectronics applications. Enabling features of ALD are precise control over film thickness, excellent conformality and relative insensitivity to wafer size. Additionally, ALD allows interface and film engineering that can be utilized to maximize device performance within the minimum feature size requirements. This paper reports on the compositional, structural and electrical properties of engineered Ti-Ta-N composite films grown by ALD at 360°C. For a wide range of composition these Ti-Ta-N films exhibit resistivity from 500 to 2000 μω-cm, high density, and 100 % step coverage. Additionally, the ability to control texture by changing film composition is established. Based on experimental results, an approach to grow Composite Engineered Barriers by ALD (CEBA) is described that could provide a solution to the challenging barrier requirements.

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